Disco Corporation

Tokyo Ohka Kogyo Co., Ltd.

Nobuyasu Kitahara

Toshiyuki Yoshikawa

Kenji Furuta

Kunimitsu Takahashi

Ryugo Oba

Satoshi Genda

Yoshiaki Yodo

Noboru Takeda

Yuki Ogawa

Hitoshi Hoshino

Kentaro Iizuka

Yohei Yamashita

Junichi Kuki

Joel Koerwer

Hiroto Yoshida

Atsushi Kawakami

Naoki Murazawa

Takashi Sampei

Chikara Aikawa

Seiji Fujiwara

Hiroshi Takanashi

Kuo Wei Wu

Noburu Takeda

A protective film thickness measuring method includes a step of applying light to a top surface of a wafer in a state in which no protective film is formed and measuring a first reflection intensity of the light reflected from the top surface, a step of forming the protective film including a light absorbing material, a step of irradiating the protective film with exciting light of a wavelength at which the light absorbing material fluoresces and measuring a second reflection intensity including fluorescence of the protective film and the light reflected from the top surface, and a step of excluding reflection intensity of patterns formed on the top surface, by subtracting the measured first reflection intensity from the measured second reflection intensity, and calculating fluorescence intensity of the protective film.

Protective film thickness measuring method

There is provided a processing method of a workpiece. In the processing method, a protective film including a water-insoluble resin is formed on the front surface of a workpiece and the workpiece on which the protective film is formed is processed. Furthermore, the protective film is deteriorated by supplying an organic solvent to the workpiece processed and the protective film is removed from the front surface of the workpiece by supplying cleaning water to the protective film deteriorated.

Processing method of workpiece

A jig for assisting in aligning a plurality of rectangular workpieces is in the form of a plate having a plurality of grooves parallel to each other. The grooves have respective one ends aligned straight with each other and have a depth smaller than the thickness of the workpieces. After the workpieces have been fitted in the respective grooves, an adhesive tape is applied to the workpieces and the workpieces are transferred from the jig to the adhesive tape, so that the workpieces are arrayed in alignment with each other on the adhesive tape. The workpieces on the adhesive tape are prevented from being placed in different positions and orientations, and can subsequently be processed efficiently.

Jig and processing method using jig

An ablation method of applying a laser beam to a die attach film to perform ablation. The ablation method includes a protective film forming step of applying a liquid resin containing a fine powder of oxide having absorptivity to the wavelength of the laser beam to at least a subject area of the die attach film to be ablated, thereby forming a protective film containing the fine powder on at least the subject area of the die attach film, and a laser processing step of applying the laser beam to the subject area coated with the protective film, thereby performing ablation through the protective film to the subject area of the die attach film after performing the protective film forming step.

Ablation method for die attach film

A protective film agent for laser dicing according to the present invention comprises a solution having, dissolved therein, a water-soluble resin and at least one laser light absorber selected from the group consisting of a water-soluble dye, a water-soluble coloring matter, and a water-soluble ultraviolet absorber. The protective film agent is coated on a surface of a wafer, which is to be processed, and is then dried to form a protective film. Laser dicing through the protective film produces chips from the wafer. As a result, deposition of debris can be effectively prevented on the entire face of the chips, including their peripheral edge portions.

Protective film agent for laser dicing and wafer processing method using the protective film agent

A wafer processing method divides a wafer into a plurality of individual devices along a plurality of crossing division lines formed on the front side of the wafer. The method includes a functional layer removing step of applying a COlaser beam to the wafer along each division line with the spot of the COlaser beam, having a width corresponding to the width of each division line set on the upper surface of each division line, thereby removing a functional layer along each division line to form a groove along each division line where the functional layer has been removed, and a groove shaping and debris removing step of applying a laser beam having a wavelength in the ultraviolet region to the wafer along each groove, thereby removing debris sticking to the bottom surface of each groove and also shaping the side walls of each groove.

Wafer processing method

A protective film forming method for forming a protective film of resin on the front side of a wafer, where the method includes a step of holding the wafer on a spinner table in the condition where the front side of said wafer is oriented upward; a step of forming a water layer of a thickness of between about 1 mm and about 3 mm to cover the front side of the wafer; a step of dropping a liquid resin onto the water layer at the center of the wafer; and a step of rotating the spinner table to rotate the wafer held on the spinner table, thereby scattering the water layer and radially spreading the liquid resin dropped on the water layer to form a first resin film covering the front side of the wafer by a centrifugal force produced during rotation of the wafer.

Protective film forming method and apparatus

A device fabrication method for fabricating individual devices from a wafer, wherein the back side of each device is covered with an adhesive film for die bonding. The device fabrication method includes a wafer dividing step of dividing the wafer into the individual devices along a plurality of kerfs by using a dicing before grinding process, an adhesive film mounting step of mounting an adhesive film on the back side of the wafer after performing the wafer dividing step, and an adhesive film dividing step of applying a laser beam to the adhesive film along the kerfs after performing the adhesive film mounting step, thereby dividing the adhesive film along the kerfs.

Fabrication method for device having die attach film on the back side thereof

A method for applying a resin film to the face of a semiconductor wafer, comprising: an assembly holding step of holding an assembly on the surface of chuck means, with the back of the assembly being opposed to the surface of the chuck means, the assembly including a frame having a mounting opening formed in a central portion of the frame, and a semiconductor wafer mounted in the mounting opening of the frame by sticking a mounting tape to the back of the frame and the back of the semiconductor wafer; a liquid droplet supply step of supplying liquid droplets of a solution having a resin dissolved therein onto the face of the semiconductor wafer in the assembly after the assembly holding step; and a spreading step of rotating the chuck means subsequently to the liquid droplet supply step, thereby spreading the liquid droplets throughout the face of the semiconductor wafer. The method further comprises a cleaning step of rotating the chuck means and also supplying a cleaning fluid to the surface of the frame after the spreading step, thereby cleaning the solution which has adhered to the surface of the frame.

Method for applying resin film to face of semiconductor wafer

A method for breaking an adhesive film mounted on the back of a wafer having a plurality of streets formed in a lattice pattern on the face of the wafer, and having devices formed in a plurality of regions demarcated by the plurality of streets, the devices being divided individually, is adapted to break the adhesive film along the outer peripheral edges of the individual devices, with the adhesive film being stuck to the surface of a dicing tape mounted on an annular frame. The method comprises: a laser processing step of projecting a laser beam with a pulse width of 100 picoseconds or less onto the adhesive film through gaps between the individually divided devices to form deteriorated layers in the adhesive film along the outer peripheral edges of the individual devices; and an adhesive film breaking step of exerting external force on the adhesive film having the deteriorated layers formed therein, to break the adhesive film along the deteriorated layers.

Method for breaking adhesive film mounted on back of wafer

A wafer laser processing method for forming a groove in a wafer having a protective film on the processing surface of a substrate along a predetermined processing line, comprising a first step for forming a first groove in the protective film along the dividing lines by applying a first pulse laser beam set to an output at which the protective film can be processed but the substrate can not be processed, to the protective film along the processing lines; and a second step for forming a second groove in the substrate along the first grooves by applying a second pulse laser beam set to an output at which the substrate can be processed, along the first grooves.

Wafer laser processing method

A method of carrying out the laser processing of a wafer with a laser beam processing machine comprising a chuck table for holding a wafer, a laser beam application means for applying a laser beam to the wafer held on the chuck table and a processing-feed means for processing-feeding the chuck table and the laser beam application means relative to each other, comprising the steps of a wafer affixing step for putting the wafer on the surface of a protective tape mounted on an annular frame, a wafer holding step for holding the wafer put on the protective tape on the chuck table, and a laser beam application step for applying a laser beam having a predetermined wavelength from the laser beam application means to the wafer held on the chuck table and processing-feeding the wafer with the processing-feed means, wherein the protective tape is made of a material which transmits the laser beam having a predetermined wavelength applied from the laser beam application means.

Method for laser processing of wafer

A laser beam processing method for processing a wafer by applying a laser beam to a predetermined area, comprising the steps of forming a resin film which absorbs a laser beam, on the surface to be processed of the wafer; applying a laser beam to the surface to be processed of the wafer through the resin film; and removing the resin film after the laser beam application step.

Growing community of inventors

Tokyo, Japan

Nobuyasu Kitahara