Tianma Japan, Ltd.

Nlt Technologies, Ltd.

Wuhan Tianma Micro-electronics Co., Ltd

Akita Prefecture

Nobuya Seko

Haruki Yamane

Jun Tanaka

Kenichi Hayashi

Ken Sumiyoshi

Koji Shigemura

Hiroyuki Sekine

Satoshi Miura

Yoshikazu Hatazawa

Koki Takahashi

Kiyoshi Yamakawa

Shingo Takahashi

Kazuyuki Ise

Thermoelectric conversion cells of a thermoelectric conversion element include a thermoelectric conversion layer formed on a main surface of a substrate, an insulating layer covering the thermoelectric conversion layer, a first electrode including a first layer and a second layer, and a second electrode. The first layer connects to the main surface of the thermoelectric conversion layer via a first contact hole, and the second layer covers the first layer. The second electrode connects to the main surface of the thermoelectric conversion layer via a second contact hole. The second layer and the second electrode, and the first layer are formed from materials having different work functions. In thermoelectric conversion cells that are adjacent to each other, the second layer of one of the thermoelectric conversion cells and the second electrode of the other of the thermoelectric conversion cells are formed integrally, and the thermoelectric conversion cells are connected in series.

Thermoelectric conversion element and manufacturing method for thermoelectric conversion element

A thermoelectric transducer includes a substrate, a thermoelectric film on the substrate, a first electrode on the substrate, and a second electrode on the substrate, the second electrode being different from the first electrode in work function. The first electrode and the second electrode are in contact with the same side of the thermoelectric film. The outer edge of the thermoelectric film is located inner than the outer edge of the substrate.

Thermoelectric transducer and thermoelectric transducer module

A thermoelectric conversion element includes a substrate, a thermoelectric conversion layer disposed on a first main surface of the substrate, an insulating layer covering the thermoelectric conversion layer, a first electrode disposed on the insulating layer and connecting to a first main surface of the thermoelectric conversion layer via a first contact hole of insulating layer, and a second electrode disposed on the insulating layer and connecting to the first main surface of the thermoelectric conversion layer via a second contact hole of the insulating layer. At least a portion of the first electrode is formed from a material that has a work function that is different from a work function of a material forming the second electrode.

A gas sensing element that reflects light incoming along an optical path on a sensing face, where the light reflected by the gas sensing element changes depending on a quantity of a specific gas that is in contact with the gas sensing element, and where each of a first optical fiber and a second optical fiber bends the optical path. The gas sensing element, a light source, a photodetector, and a magnetic field applicator are disposed on a same side with respect to a virtual plane that is perpendicular to an incident plane of the incoming light to the sensing face of the gas sensing element and includes a point on the optical path where light goes out from the first optical fiber and a point on the optical path where light enters the second optical fiber.

Gas sensing apparatus

An optical detection type chemical sensor includes a light source, a detection element and a photodetector. The detection element is constituted of a laminate in which a multilayer film including a chemical detection layer, an optical interference layer, and a half mirror layer is formed on a transparent substrate. At least one of the layers includes a magnetic material. Light from the light source is applied to the detection element under the condition that the light enters inside of the detection element from the rear surface of the transparent substrate on which the laminate is not formed and multiple reflection occurring in the laminate intensifies the magneto-optical effect. A subject is detected by using the photodetector to detect a magneto-optical signal indicating a change in reflected light from the laminate resulting from a change in an optical property resulting from a reaction in the chemical detection layer.

Optical detection type chemical sensor

A gas sensing element reflects light incoming along an optical path on a sensing face. The light reflected by the gas sensing element changes in a characteristic depending on quantity of a specific gas that is in contact with the gas sensing element. Each of a first optical element and a second optical element bends the optical path. The gas sensing element, a light source, a photodetector, and a magnetic field applicator are disposed on the same side with respect to a virtual plane that is perpendicular to an incident plane of the incoming light to the sensing face of the gas sensing element and includes a point on the optical path where light goes out from the first optical element and a point on the optical path where light enters the second optical element.

A display device includes a substrate; a plurality of light-emitting elements on the substrate; and a plurality of pixel circuits on the substrate, being configured to control the plurality of light-emitting elements in one-to-one correspondence. Each of the plurality of pixel circuits includes a thin film transistor. The thin film transistor includes a channel. The plurality of pixel circuits are disposed at different positions in a scanning direction of a pulse laser beam for annealing the channels. At least channels for light-emitting elements of the same color out of the channels are disposed at the same phase of irradiation cycles of the pulse laser beam in the scanning direction.

Display device

For improved high-definition of liquid crystal display devices and the use thereof in bright places, luminance of backlights is being increased. Thus, when a light-shielding layer is employed for suppressing a light leakage current, characteristic fluctuations of transistors are caused, which may result in showing faulty display. In a dual-gate thin film transistor having a floating light-shielding layer, the layout is designed in such a manner that the film thickness of the insulating layer is equal to or more than 200 nm and equal to or less than 500 nm and that Sg/Sd becomes 4.7 or more, provided that an opposing area between the light-shielding layer and a drain region in a place at the outermost side of the active layer is Sd and the opposing area between the light-shielding layer and the gate electrode is Sg.

Thin film transistor and display device

Provided are a display apparatus and a manufacturing method of the same. The display apparatus includes: a counter substrate, and an active matrix substrate including a pixel area. The active matrix substrate includes, in a non-transmissive region of each pixel, a transparent substrate, a polycrystalline silicon film, a gate insulating film, a gate electrode, an interlayer insulating film, and a drain layer including patterned conductive films, and includes, in a transparent region of each pixel, the transparent substrate, the gate insulating film and the interlayer insulating film. The interlayer insulating film includes zones where the interlayer insulating film is thinner than a part of the interlayer insulating film at the middle of each transmissive region. The zones are each located so as to extend between the neighboring patterned conductive films and are further located so as not to overlap with the transmissive regions and regions laid over LDD portions of the polycrystalline silicon film.

Growing community of inventors

Kanagawa, Japan

Nobuya Seko