Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Nobuya Nishida

Rei Yoneyama

Hiroyuki Okabe

Yoshikazu Tanaka

Hiroshi Yoshida

Shiori Uota

Taichi Obara

Kyoko Oyama

Takahiro Inoue

Masanori Fukunaga

Nobutake Taniguchi

Masaki Taya

Shinichi Izuo

Masaaki Ishino

Motonobu Joukou

A three-level I-type inverter includes first to fourth switching devices between first and second potentials, first to fourth diodes, and fifth and sixth diodes. The first to fourth diodes are respectively connected to the first to fourth switching devices in anti-parallel. Between a connection node of the first and second switching devices and a connection node of the third and fourth switching devices, the fifth and sixth diodes are connected in series and in anti-parallel with series connection of the second and third switching devices. A connection node of the fifth and sixth diodes is connected to an input node having intermediate potential. A connection node of the second and third switching devices is connected to an output node. The second switching device and diode are formed of a first reverse conducting IGBT. The third switching device and diode are formed of a second reverse conducting IGBT.

Three-level I-type inverter and semiconductor module

An electronic circuit according to this invention includes a printed circuit board and an electronic component that is soldered onto the printed circuit board. The electronic component is a flat package including a die pad exposed to outside and external electrode terminals. A gap is provided between the printed circuit board and the electronic component. The printed circuit board is provided with a hole between the die pad and the external electrode terminals in planar view. The gap is filled with insulating resin at least partially between the die pad and the external electrode terminals. The insulating resin is injected through the hole.

Electronic circuit, production method thereof, and electronic component

An electric-power converting device having an inverter circuit of a 4-parallel configuration is realized by a combination of four first to third power semiconductor module devices. In each of module device groups, a single unit of the first power semiconductor module device and a single unit of the second power semiconductor module device are mixedly disposed so as to be alternately disposed. Furthermore, the first to third power semiconductor module devices have circuit element groups which have a common point that each circuit element group includes at least one of first and second transistors and first and second diodes.

Electric-power converting device, solar power conditioner system, electricity storage system, uninterruptible power source system, wind power generation system, and motor drive system

A semiconductor device includes: a voltage-dividing resistor circuit including first and second resistors connected in series between a power supply potential and a reference potential and outputting a potential at a point of connection between the first and second resistors; a transient response detection circuit including a third resistor having a first end connected to the power supply potential and a capacitor connected between a second end of the third resistor and the reference potential, and outputting a potential at a point of connection between the third resistor and the capacitor; an AND circuit ANDing an output signal of the voltage-dividing resistor circuit and an output signal of the transient response detection circuit; and an output circuit, wherein switching of the output circuit is controlled by an output signal of the AND circuit.

Semiconductor device and semiconductor module

A semiconductor device in the preferred embodiment includes: a lead frame comprising a die pad and an electrode terminal; and at least one semiconductor chip bonded to a surface of the die pad, wherein the lead frame excluding a bottom surface thereof and the semiconductor chip are sealed by a sealing resin, and an unevenness is introduced on a bonding interface between the surface of the die pad and the semiconductor chip.

In a power module, a power semiconductor element is mounted on a heat dissipation substrate having a tilted part formed at an end portion thereof, a resin case is arranged so as to surround the power semiconductor element and to contact the heat dissipation substrate, and a cooling fin is arranged so as to contact a surface of the heat dissipation substrate opposite a surface of the heat dissipation substrate on which the power semiconductor element is mounted. The power module includes pressure member contacting the tilted part of the heat dissipation substrate to press the heat dissipation substrate against the cooling fin.

Power module

A power semiconductor apparatus is provided with power controlling semiconductor modules connected in parallel to each other. Each power controlling semiconductor module controls driving of a power semiconductor device. The power semiconductor apparatus includes a transmission circuit and a reception circuit provided in one and another power controlling semiconductor modules, respectively. The transmission circuit transmits a predetermined communication signal to another power controlling semiconductor module based on a predetermined activation signal generated by one power controlling semiconductor module. The reception circuit receives the transmitted communication signal, and controls driving control operation of another power controlling semiconductor module based on the received communication signal.

Growing community of inventors

Tokyo, Japan

Nobuya Nishida