Tokyo Electron Limited

Nobutoshi Terasawa

Tsuyoshi Moriya

Noriaki Koyama

Ayuta Suzuki

Eiji Kikama

Songyun Kang

Yoshiaki Okabe

Fumiaki Nagai

Masayuki Kitamura

Shingo Hishiya

Kazuo Yabe

Tatsuya Miyahara

Tomoyuki Nagata

Minoru Obata

Motoshi Fukudome

Kazushi Shoji

Motokatsu Miyazaki

Hiroaki Kikuchi

Takehiro Kinoshita

Yuki Tanabe

Tomonori Yamashita

Takazumi Tanaka

Shintaro Saruwatari

Kazuaki Sasaki

An abnormality detection method includes: supplying a gas controlled to a selected rate to a gas supply pipe via the gas pipe connected to the gas supply pipe, thereby introducing the gas into a reaction region of a processing container provided in a processing apparatus from a gas hole of the gas supply pipe; measuring a pressure inside the gas pipe by a pressure gauge attached to the gas pipe; and detecting an abnormality of at least one of the gas supply pipe and the gas pipe based on the pressure measured at the measuring.

Abnormality detection method and processing apparatus

An information processing apparatus detects an abnormality sign in a semiconductor manufacturing apparatus. The apparatus includes: a sensor data collector configured to acquire sensor waveform data represented with respect to a sensor value axis and a time axis measured by a semiconductor manufacturing apparatus that is executing a process according to a same recipe; a monitoring band calculator configured to calculate each monitoring band represented with respect to the sensor value axis and the time axis used in a waveform monitoring method from a predetermined number or more of the sensor waveform data; and an abnormality sign detector configured to monitor a waveform of the sensor waveform data using each monitoring band represented with respect to the sensor value axis and the time axis and detect an abnormality sign of the semiconductor manufacturing apparatus.

Method and apparatus for determining cause of abnormality in a semiconductor manufacturing chamber

A substrate processing system includes: an acquiring unit configured to acquire process data of each step when each step included in a predetermined process is executed under different control conditions; an extracting unit configured to divide each step into a first section in which the process data fluctuates and a second section in which the process data is converged, and extract first data belonging to the first section and second data belonging to the second section from the process data; and a monitoring unit configured to monitor the process data by comparing one or both of an evaluation value that evaluates the first data and an evaluation value that evaluates the second data with corresponding upper and lower limit values.

Substrate processing system and method for monitoring process data

Etching is performed through the following process. A substrate is loaded into a processing chamber and mounted on a mounting table therein. Then, in the state where a ring member at least a surface of which is made of a same material as a main component of an etching target film is provided to surround the substrate, a processing gas is injected in a shower-like manner from a gas supply unit oppositely facing the substrate and the etching target film is etched by using a plasma of the processing gas; and evacuating the inside of the processing chamber through an exhaust path. Through this process, unbalanced distribution of plasma active species in the vicinity of a circumferential edge portion of the substrate can be suppressed.

Etching method, etching apparatus, and ring member

A method of estimating the life of a heater wire, including the steps of: detecting a maximum value of electric power supplied to the heater wire during a temperature rising period during which a temperature is elevated to a preset heating temperature, obtaining an index indicative of the amplitude of the electric power, and giving a notice that the heater wire is approaching the end of its life when the electric power and the index indicative of the of amplitude of the electric power exceed threshold values respectively provided thereto.

Life estimating method for heater wire, heating apparatus, storage medium, and life estimating system for heater wire

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Nirasaki, Japan

Nobutoshi Terasawa