Dainippon Screen Mfg. Co., Ltd.

Dainippon Screen Mgf. Co., Ltd.

Nobutoshi Ogami

Takeshi Takada

Kazuo Nakajima

Hisao Nishizawa

Masaru Kitagawa

Noritaki Mori

Katsunori Tanaka

Yasuhiro Kurata

Mikio Shoda

A substrate processing apparatus does not allow sudden boiling of supplementary liquid but rather sufficiently diffuses the supplementary liquid into processing liquid so that the temperature of the processing liquid does not decrease largely. De-ionized water (PW) is ejected through a plurality of de-ionized water blow-off openings (Ha) which are formed in a de-ionized water injection nozzle (10a). Inside an internal bath (1), which is located immediately below the de-ionized water blow-off openings, and close to a overflow part (20a) which is a top edge of a side surface (1a) of the internal bath (1), the de-ionized water reaches the surface of a phosphoric acid solution (PA). The de-ionized water thereafter reaches a gutter part (30a) of an external bath (2), as it is mixed with the phosphoric acid solution (PA), and flows into a reservoir part (30d) of the external bath (2). Since the de-ionized water (PW) never reaches inside the phosphoric acid solution (PA) within the internal bath (1), sudden boiling of the de-ionized water (PW) is prevented. The phosphoric acid solution (PA) and the de-ionized water (PW) are stirred up when the phosphoric acid solution (PA) flows over from the internal bath (1) into the external bath (2), and therefore, the de-ionized water (PW) is sufficiently diffused into the phosphoric acid solution (PA). As this does not keep the de-ionized water (PW) at the surface of the phosphoric acid solution (PA), the de-ionized water (PW) does not evaporate directly from the surface of the phosphoric acid solution (PA), a decrease in the temperature of the phosphoric acid solution (PA) is small.

Method of and an apparatus for processing a substrate

Calibration curve data is collected by measuring transmitted light intensities of a treating solvent while solvent temperature is varied. Also measured are a standard transmitted light intensity (transmitted light intensity of a standard treating solution prepared at a predetermined concentration and temperature) and a reference transmitted light intensity (transmitted light intensity of the solvent). Estimated transmitted light intensity of the solvent when its temperature is the same as that of the standard treating solution, is derived from the temperature of the standard treating solution and the calibration curve data stored. A correction factor is computed from a ratio between the reference transmitted light intensity and estimated transmitted light intensity. Then, transmittance of the standard treating solution (standard transmittance) is computed from the standard transmitted light intensity, reference transmitted light intensity and a correction factor. Subsequently, transmitted light intensity of a treating solution for actual use in treating substrates (sample transmitted light intensity) is measured. A sample transmittance of this treating solution is derived from the sample transmitted light intensity, reference transmitted light intensity and a correction factor. Concentration of the treating solution is controlled based on the standard and sample transmittance.

Concentration controlling method and a substate treating apparatus

A surface treatment apparatus is composed of a supporting die for holding a substrate thereon to heat or cool the substrate; a cover capable of advancing close to the supporting die or into point-to-point contact with the supporting die to define a treatment space over the entire upper surface of the substrate on the supporting die, said cover defining a hole for the introduction of a surface treatment agent into the treatment space; and an evacuation chamber provided on the peripheral side wall of the supporting die, whereby the surface treatment agent is allowed to flow out from the treatment space into the evacuation chamber. No substantial conduction of heat takes place from the supporting die by way of the cover. The thermal distribution of the supporting die is thus kept extremely uniform, whereby each surface treatment can be conducted uniformly. Furthermore, owing to the provision of the evacuation chamber around the supporting die, the vaporized surface treatment agent is not allowed to escape into the room. The apparatus is effective in applying an adhesion-enhancing agent to a substrate so that the adhesion of a photoresist to the substrate is facilitated.

Surface treatment apparatus

An apparatus for feeding semiconductor substrates (i.e., wafers) or the like along a path to a processing section such as a hot plate, and moving the same therefrom to the next process. The apparatus includes: a belt conveyor means preferably comprised for a pair of belts and having a horizontal top surface which can be driven along the feed path; means for raising and lowering the belt conveyor means to allow the wafers to be placed into position and taken out of position on the processing section; a processing plate associated with the processing section having a suction tube through which a vacuum is applied to a wafer on the processing plate, and also having grooves to receive the belts when the wafer is placed on the processing plate; and elevator means, which cooperate with the belt conveyor means, for raising the wafer to detach from the plate. The elevator means protrudes and withdraws with respect to the upper surface of the processing plate, and may take several forms such as horizontal longitudinal members which are received by grooves in the processing plate, or pins projecting from the holes in the processing plate through which the pneumatic suction is applied to the wafers during the heat treatment provided by the hot plate.

Apparatus for feeding wafers and the like

A positioning assembly comprises a base having a pair of taller projections and a pair of shorter projections on its surface. The positioning assembly is placed between a pair of belts which form a conveying assembly, so that the taller projections receive a sheet material which is conveyed along the belts. The positioning assembly is positioned at a middle position in which the taller projections project above the belts, whereby the taller projections receive the material. Receiving the material, the positioning assembly is elevated to a high position where all the projections including the shorter one project above the belts, whereby the material is held on the base. The material is processed with being rotated at the high position. Then the positioning assembly is lowered to a low position where all the projections are below the belts, whereby the material is delivered again onto the belts to be conveyed to the next process.

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Shiga, Japan

Nobutoshi Ogami