Sharp Kabushiki Kaisha Corporation

Other

Nobutoshi Arai

Hiroshi Iwata

Seizo Kakimoto

Masatomi Harada

Takayuki Ogura

Kouichirou Adachi

Akira Sakai

Akihide Shibata

Hiroshi Kotaki

Yukio Yasuda

Shigeaki Zaima

The light emitting device of the invention includes a first electrode, a second electrode, and a carrier formed between the first electrode and the second electrode and containing germanium light emitters, wherein the germanium light emitters contain germanium oxide in which at least part of the germanium oxide has oxygen deficiency and have a wavelength peak of emission in both or either the range of 250 to 350 nm and/or the range of 350 to 500 nm when a potential difference is applied to the first electrode and the second electrode.

Light emitting device and method for manufacturing the same

The light emitting device of the invention comprises a first electrode, a second electrode being light transmitting, and a carrier sandwiched between the first electrode and the second electrode and containing light emitters, wherein the first electrode has a plurality of projections or a pn junction formed with a p-type semiconductor and an n-type semiconductor each on a surface being in contact with the carrier.

A silicon oxide of a film thickness of about 50 nm is formed on a surface of a silicon substrate by thermal oxidation. Silver is implanted into the silicon oxide with implantation energy of about 30 keV by a negative ion implantation method. By subjecting the silicon oxide, into which the silver has been implanted, to heat treatment at a temperature of not lower than 200&#xb0; C. and lower than the melting point of silver, silver particles are formed. By oxidizing the surface portions of the fine particles by heat treatment in an oxidizing atmosphere, silver oxide is formed as a coating layer.

Fine particle-containing body, fine particle-containing body manufacturing method, storage element, semiconductor device and electronic equipment

A memory function body has a medium interposed between a first conductor (e.g., a conductive substrate) and a second conductor (e.g., an electrode) and consisting of a first material (e.g., silicon oxide or silicon nitride). The medium contains particles. Each particle is covered with a second material (e.g., silver oxide) and formed of a third material (e.g., silver). The second material functions as a barrier against passage of electric charges, and the third material has a function of retaining electric charges. The third material is introduced into the medium by, for example, a negative ion implantation method.

Memory function body, particle forming method therefor and, memory device, semiconductor device, and electronic equipment having the memory function body

A resistance-changing function body includes an object made of a first substance and interposed between a first electrode and a second electrode, and a plurality of particles made of a second substance and arranged within the object so that an electrical resistance between the first electrode and the second electrode is changed before and after application of a specified voltage to between the first electrode and the second electrode. The first substance makes an electrical barrier against the second substance. With this constitution, by applying a specified voltage to between the first electrode and the second electrode, the electrical resistance can be changed depending on a state of the particles made of the second substance. Also, by virtue of a simple structure, a resistance-changing function body of small size is provided with low cost.

Memory device including resistance-changing function body

A variable resistance functional body has an insulator interposed between a first electrode and a second electrode and interposed between a third electrode and a fourth electrode. The insulator contains a plurality of conductive particles. The conductive particles are formed by implanting a substance for forming the conductive particles into the insulator by the negative ion implantation method. The conductive particles are provided so that an electrical resistance between the third electrode and the fourth electrode changes on the basis of a size effect or a change in size between before and after application of a prescribed voltage across the first electrode and the second electrode.

Variable resistance functional body and storage device

A memory film operable at a low voltage and a method of manufacturing the memory film; the method, comprising the steps of forming a first insulation film () on a semiconductor substrate () forming a first electrode, forming a first conductor film () on the first insulation film (), forming a second insulation film (B) on the surface of the first conductor film (), forming a third insulation film containing conductor particulates () on the second insulation film (B), and forming a second conductor film forming a second electrode on the third insulation film.

Memory film, method of manufacturing the memory film, memory element, semiconductor storage device, semiconductor integrated circuit, and portable electronic equipment

A memory function body, which includes a plurality of silver particlescovered with silver oxide, is interposed between a first electrodeand a second electrode. A magnitude of a current through the memory function bodychanges on applying a prescribed voltage between the first electrodeand the second electrode, and a storage state is discriminated according to the magnitude of the current. The silver particles, which capture electric charges, are covered with the silver oxidethat serves as a barrier against the passage of electric charges, and therefore, the memory function bodycan stably retain electric charges at the normal temperature.

Growing community of inventors

Nara-ken, Japan

Nobutoshi Arai