Tdk Corporation

Nobuto Morigasaki

Toshihiko Kaneko

Yasuhiro Ito

Dan Sakurai

Takuma Ariizumi

Taku Murakami

Kosuke Takano

Tatsuya Ishii

Toshinari Takahashi

Mari Miyauchi

Takashi Kojima

Toshihiro Iguchi

Kazuhiro Komatsu

Masakazu Hosono

Sanshiro Aman

Takeru Yoshida

Tomohisa Fukuoka

Shinsuke Hashimoto

Yoshitaka Nagashima

Yuhta Matsunaga

Tatsuya Fujino

Takashi Sasaki

Masahiro Yoshida

Makoto Maeda

Masato Kimura

Hideaki Seki

Yasushi Kawashima

Momoyo Sasaki

Haruki Ebina

Tsubasa Aoki

A multilayer electronic device includes an element body and a pair of external electrodes. The element body includes an interior region in which inner dielectric layers and internal electrode layers are alternately laminated and an exterior region located outside the interior region in its lamination direction. The pair of external electrodes exists on surfaces of the element body. Main-phase particles in the inner dielectric layers and outer dielectric layers of the exterior region include a main component having a perovskite crystal structure represented by a general formula of ABO. r1<r2<r1×4.0 is satisfied, in which r1 is an average particle size of the main-phase particles constituting the inner dielectric layers, and r2 is an average particle size of the main-phase particles constituting the outer dielectric layers.

Multilayer electronic device

A multilayer electronic device includes an element body including an interior region and an exterior region and a pair of external electrodes. The interior region includes inner dielectric layers and internal electrode layers laminated alternately. The exterior region is disposed outwards from the interior region in a lamination direction. The pair of external electrodes is disposed on a surface of the element body and connected to the internal electrode layers. D<D<Dand D>D>Dare satisfied, where 'RA' includes an element having a highest mole ratio among “RE” in the inner dielectric layers of a third region at a center of the interior region in the lamination direction, “RB” includes an element having a highest mole ratio among “RE” in a first region at a center of the exterior region in the lamination direction, and “RA” and “RB” are different from each other.

A dielectric ceramic composition includes a barium titanate, an oxide of an R element, an oxide of an M element, and an oxide containing Si. The R element is one or more elements selected from Eu, Gd, Tb, Dy, Y, Ho, and Yb. The M element is one or more elements selected from Mg, Ca, Mn, V, and Cr. A ratio of an amount of the oxide of the R element in terms of ROto an amount of the oxide containing Si in terms of SiOis 0.8:1 to 2.2:1. A ratio of an amount of the oxide of the M element in terms of MO to the amount of the oxide containing Si in terms of SiOis 0.2:1 to 1.8:1.50% or more of the number of dielectric particles constituting the dielectric ceramic composition is core-shell dielectric particles having a core-shell structure.

Dielectric ceramic composition and electronic device

A dielectric composition includes main-phase particles each including a main component having a perovskite crystal structure represented by a general formula of ABO. At least a part of the main-phase particles has a core-shell structure. The dielectric composition includes RA, RB, M, and Si. Each of A, B, RA, RB, and M is one or more elements selected from a specific element group. S/S>C/Cis satisfied, where Cis an RA content (mol %) to the main component in terms of RAO, and Cis an RB content (mol %) to the main component in terms of RBO, in the dielectric composition, and Sis an average RA content (mol %), and Sis an average RB content (mol %), in a shell part of the core-shell structure.

Dielectric composition, electronic device, and multilayer electronic device

A dielectric composition includes a main phase and segregation phases each including RE (at least one rare earth element). The main phase includes a main component having a perovskite crystal structure of ABO(A is one or more selected from Ba, Sr, and Ca, and B is one or more selected from Ti, Zr, and Hf). The segregation phases are classified into first segregation phases whose atomic ratio of Si to RE is 0 or more and 0.20 or less and second segregation phases whose atomic ratio of Si to the RE is more than 0.20. 0&#x2264;S1/S2&#x2264;0.10 is satisfied on a cross section of the dielectric composition, where S1 is an area ratio of the first segregation phases, and S2 is an area ratio of the second segregation phases. An atomic ratio of Si to RE in the second segregation phases is 0.80 or less on average.

An electronic component includes an element body having a functional layer and an internal electrode layer, and an external electrode formed on a surface of the element body and connected to the internal electrode layer electrically. The chlorine concentration of the element body of the electronic component is 10 ppm or less.

Electronic component

A dielectric ceramic composition contains dielectric particles containing a main component represented by a composition formula (BaSrCa)(TiZr)Oand grain boundaries present between the dielectric particles. The values of m, x, y, and z in the composition formula are all molar ratios. In the composition formula, 0.9&#x2264;m&#x2264;1.4, 0&#x2264;x&#x3c;1.0, 0&#x3c;y&#x2264;1.0, 0.9&#x2264;(x+y)&#x2264;1.0, and 0.9&#x2264;z&#x2264;1.0 are satisfied. The dielectric particles contain specific structural particles having a predetermined intragranular structure, and each of the specific structural particles intragranularly includes a first region and a second region having different Ca concentrations from each other. C2/C1 is less than 0.8 in which C1 is an average value of the Ca concentration in the first region and C2 is an average value of the Ca concentration in the second region.

Dielectric ceramic composition and electronic component

A dielectric composition includes main phases and Ca-RE-Si&#x2014;O segregation phases. The main phases include a main component expressed by ABO. 'A' includes at least one selected from barium and calcium. 'B' includes at least one selected from titanium and zirconium. &#x201c;RE&#x201d; represents at least one of rare earth elements. A molar ratio of (Si/Ca) is larger than one. A molar ratio of (Si/RE) is larger than one, provided that the molar ratio of (Si/RE) is a molar ratio of silicon included in the segregation phases to the rare earth elements included therein. An average length of major axes of the segregation phases is 1.30-2.80 times as large as an average particle size of the main phases. An average length of minor axes of the segregation phases is 0.21-0.48 times as large as an average particle size of the main phases.

Dielectric composition and electronic device

The object of the present invention is to provide the multilayer ceramic capacitor having no deterioration of dielectric properties even in case an inhibitor of an internal electrode layer is pushed out to a dielectric layer when sintering. The multilayer ceramic capacitorincluding a capacitor element bodycomprising a dielectric layerand an internal electrode layerstacked in an alternating manner, wherein

Multilayer ceramic capacitor having a capacitor element body inculding a dielectric layer and an internal electrode layer

A dielectric ceramic composition having improved insulation specific resistance and a highly accelerated lifetime. The dielectric ceramic composition includes a dielectric particle having a core-shell structure including a main component expressed by a general formula ABO, where A is Ba and the like, and B is Ti and the like), and a rare earth element component R, in which a shell part of the core-shell structure has an average rare earth element concentration C of 0.3 atom % or more. The rare earth element has a specified concentration gradient or concentration variation.

Dielectric ceramic composition and multilayer ceramic electronic component

The object of the present invention is to provide a multilayer ceramic electronic component having improved highly accelerated lifetime and specific permittivity. A multilayer ceramic electronic component comprising a multilayer body in which an internal electrode layer and a dielectric layer are stacked in alternating manner, wherein the dielectric layer comprises a dielectric ceramic composition having a main component expressed by a general formula ABO(A is Ba and the like, and B is Ti and the like) and a rare earth component R, a segregation phase including the rare earth component R exists in the dielectric layer, an area ratio of the segregation phases in a cross section along a stacking direction is 104 ppm to 961 ppm, and 96% or more of a total area of the segregation phases contact with the internal electrode layer.

Multilayer ceramic electronic component

The object of the present invention is to provide a dielectric ceramic composition having good properties, particularly good IR property and high temperature accelerated lifetime. The dielectric ceramic composition of the present invention has a main component made of a perovskite type compound expressed by a compositional formula of (BaSrCa)(TiZr)O(note that, m, x, y, and z of the above compositional formula all represent molar ratios, and each satisfies 0.9&#x2264;m&#x2264;1.1, 0&#x2264;x&#x2264;0.5, 0&#x2264;y&#x2264;0.3, 0&#x2264;(x+y)&#x2264;0.6, and 0.03&#x2264;z&#x2264;0.3), and

Dielectric ceramic composition and multilayer ceramic capacitor

A dielectric ceramic composition having good properties, particularly good IR property and high temperature accelerated lifetime, even under high electric field intensity. A dielectric ceramic composition having a main component made of a perovskite type compound expressed by a compositional formula of (Ba1-x-ySrxCay)m(Ti1-zZrz)O3 (note that, m, x, y, and z of the above compositional formula all represent molar ratios, and each satisfies 0.9&#x3c;m&#x3c;1.1, 0&#x3c;x&#x3c;0.5, 0&#x3c;y&#x3c;0.3, 0&#x3c;(x+y)&#x3c;0.6, and 0.03&#x3c;z&#x3c;0.3), and a first sub component made of an oxide of a rare earth element R (note that, R is at least one selected from the group consisting of Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu), wherein the dielectric ceramic composition includes dielectric particles and a particle boundary.

A dielectric ceramic composition having good characteristic even under high electric field intensity, and particularly good IR characteristic and high temperature accelerated lifetime. The present invention is a dielectric ceramic composition comprising,

The object of the present invention is to provide the dielectric ceramic composition having good characteristics even under the high electric field intensity, and particularly good IR characteristic and the high temperature accelerated lifetime. The dielectric ceramic composition according to the present invention comprises a main component comprising a perovskite type compound shown by a compositional formula (BaSrCa)(TiZr)O(note that, said 'm', 'x', &#x201c;y&#x201d; and &#x201c;z&#x201d; all show a mol ratio, and each satisfies 0.94&#x2264;m&#x2264;1.1, 0&#x2264;x&#x2264;0.2, 0&#x2264;y&#x2264;0.2, 0.06&#x2264;z&#x3c;0.2),

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Tokyo, Japan

Nobuto Morigasaki