Hitachi Automotive Systems, Ltd.

Hitachi, Ltd.

Hitachi Astemo Ltd.

Renesas Technology Corp.

Other

Hitachi Cable, Inc.

Hitachi Automotive Systems Hanshin, Ltd.

Nobutake Tsuyuno

Toshiaki Ishii

Takeshi Tokuyama

Eiichi Ide

Toshiya Satoh

Akira Matsushita

Akira Nagai

Yujiro Kaneko

Shuji Eguchi

Hiroyoshi Kokaku

Junpei Kusukawa

Kinya Nakatsu

Masahiko Ogino

Ichiro Anjoh

Hiroshi Hozoji

Masanori Segawa

Tokihito Suwa

Asao Nishimura

Kunihiro Tsubosaki

Makoto Kitano

Chuichi Miyazaki

Takumi Ueno

Mamoru Mita

Takashi Hirao

Yusuke Takagi

Makoto Morishima

Masahide Harada

Takashi Naito

Ryuichi Saito

Satoshi Nakamura

Takuya Aoyagi

Yoshio Kawai

Motomune Kodama

Atsuo Nishihara

Maki Ito

Akihiro Namba

Shintaro Tanaka

Masahiko Asano

Hideto Yoshinari

Rie Hattori

Norio Okabe

Toshiak Ishii

Tadanori Segawa

Mina Amo

Hiroyuki Temmei

Hiroshi Houzouji

Hiromi Shimazu

Shigeo Amagi

Masanori Miyagi

Yoichi Anzo

Mitsuhiro Masuda

Shinya Kawakita

Masayuki Kamikawa

Itaru Tanabe

Morio Kuwano

Shinji Hiramitsu

Takahiro Araki

Hideaki Ishikawa

Takehide Yokozuka

Takayuki Fukuzawa

Shinichi Fujiwara

Masashi Yura

Eiji Nishioka

Fusao Hojo

Toru Kato

Masahito Mochizuki

Yasuhide Sugawara

Hironori Nagasaki

Kazuaki Naoe

Ogino Masahiko

Ryou Moteki

Yuujiro Kaneko

Hiroshi Kameyama

Provided is an electric circuit body including: a power semiconductor element; a first conductor plate configured to be connected to one surface of the power semiconductor element; a first sheet-shaped member having a first resin insulation layer and configured to at least cover a surface of the first conductor plate; a sealing material configured to seal each of the power semiconductor element, the first conductor plate, and an end of the first sheet-shaped member; and a first cooling member configured to be adhesively attached to the first sheet-shaped member. In the electric circuit body, the first sheet-shaped member includes: an embedded portion where the end of the first sheet-shaped member is covered with the sealing material; a heat dissipation surface as a region to overlap the surface of the first conductor plate; and a margin as a region between the embedded portion and the heat dissipation surface, the margin is located more inward than the heat dissipation surface, and the embedded portion is located more inward than the margin.

Electric circuit body, power conversion device, and method for manufacturing electric circuit body

A power module includes a power semiconductor element converting DC power into AC power and outputting the AC power to a motor; a conductor electrically connected to the power semiconductor element; a substrate having a substrate wiring connected to the conductor on a surface; and a resin sealing material sealing the power semiconductor element, the conductor, and the substrate. The substrate has, at a position in contact with an end portion of the resin sealing material, a concave portion formed by a surface of the substrate wiring becoming concave in a continuously curved surface shape.

Power module and power conversion device using the same

The resin materialis arranged in a first regionsurrounded by the fin base, the inclined portionof the cover member, and the outermost peripheral heat dissipation finsarranged on the outermost peripheral side. Then, the resin materialis caused to protrude to the first region. That is, the resin materialis arranged in the first region. In a cross section perpendicular to the refrigerant flow direction (Y direction), a cross-sectional area of the first regionis larger than an average cross-sectional areaof the adjacent heat dissipation fins. Then, a cross-sectional area of a second regionformed between the resin materialarranged in the first regionand the outermost peripheral heat dissipation finarranged on the outermost peripheral side is smaller than the average cross-sectional areaof the heat dissipation fins.

Power module, power conversion device, and method for manufacturing power module

A semiconductor device includes: a semiconductor element that converts DC electric power into AC electric power; a DC terminal that transmits DC electric power; an AC terminal that transmits AC electric power; a sealing member that seals the semiconductor element, at least a part of the DC terminal, and at least a part of the AC terminal; and at least one floating terminal that is arranged between the DC terminal and the AC terminal.

Semiconductor device, electric power conversion device, and manufacturing method of semiconductor device

A semiconductor module includes a semiconductor device that includes first and second fin bases having first and second connecting portions and a resin for sealing the outer peripheral side surfaces of first to fourth conductors, and a flow path forming body connected to the first and second connecting portions of the first and second fin bases. A first elastically deformed portion, which is elastically deformed, is provided such that a distance in a thickness direction between the outer peripheral ends of the first and second connecting portions becomes smaller than a distance in a thickness direction between intermediate portions of the first and second connecting portions. The resin is filled between the first and second connecting portions of the first and second fin bases are filled with the resin therebetween.

Semiconductor module, power conversion device, and manufacturing method of semiconductor module

Detection accuracy of a collector sense in detecting a voltage is improved. A power modulehas a first conductorand a second conductorto which a plurality of active elementsandconfiguring upper and lower arm circuits are connected. In addition, the power modulehas an AC side terminalB protruding from one side, a positive electrode side terminalB and a negative electrode side terminalB which protrude from the other side, an intermediate electrode portionthat connects the first conductorand the second conductorto each other, and a collector sense wiringin which a collector electrode of an active elementand the first conductorare connected to each other via a sense connection portion. The intermediate electrode portionis disposed close to the active elementwhich is closest to the AC side terminalB, and the sense connection portionis disposed close to the active elementwhich is farthest from the AC side terminalB.

Power module with active elements and intermediate electrode that connects conductors

An object of the invention is to improve the reliability of a power semiconductor device. The power semiconductor device according to the invention includes a semiconductor element, a first terminal and a second terminal that transmit current to the semiconductor element, a first base and a second base that are disposed to face each other while interposing a part of the first terminal, a part of the second terminal, and the semiconductor element between the first base and the second base, and a sealing material that is provided in a space between the first base and the second base. The second terminal includes an intermediate portion formed in such a way that a distance from the first terminal increases along a direction away from the semiconductor element. The intermediate portion is provided between the first base and the second base and in the sealing material.

Power semiconductor device

An object is to improve the productivity of a power semiconductor device. A power semiconductor device according to the invention includes a circuit portion having a conductor for transmitting a current and a power semiconductor element, a first base portion and a second base portion facing each other with the circuit portion interposed therebetween, and a transfer mold member which is in contact with the conductor and the power semiconductor element and is filled in a space between the first base portion and the second base portion. The first base portion includes a first flat portion that is connected to a peripheral edge of the first base portion, and a first bent portion that connects the first flat portion and another portion of the first base portion and is plastically deformed. The transfer mold member is integrally configured in contact with the first flat portion.

Power semiconductor device and manufacturing method of the same

A power semiconductor device includes a circuit body, first and second insulations, first and second bases, a case, and a distance regulation portion. The circuit body incudes a semiconductor element and a conductive portion. The first insulation and the second insulation oppose each other. The first base and second base also oppose each other. The case has a first opening portion covered with the first base and a second opening portion covered with the second base. The distance regulation portion has a first end that contacts the first base and a second end, that is opposite to the first end, and that contacts the second base. The distance regulation portion regulates a distance between the first base and the second base.

Power semiconductor device having a distance regulation portion and power conversion apparatus including the same

An object of the present invention is to provide a structure, particularly, a power semiconductor module, which suppresses a bypass flow of a cooling medium and improves cooling efficiency. A structure according to the present invention includes a heat dissipation plate thermally connected to a heating element, and a resin region having a resin material that fixes the heating element and the heat dissipation plate, wherein the heat dissipation plate includes a fin portion including a plurality of fins protruding from a heat dissipation surface of the heat dissipation plate and formed to be exposed from the sealing resin material, and a wall portion formed to protrude from the heat dissipation surface to a same side as the fin and which separates the fin portion and the resin region.

Power semiconductor module with heat dissipation plate

Provided is a compact power conversion device which is excellent in liquid tightness and has high reliability of a terminal connection portion. A power conversion device according to the present invention includes: a case that houses a power semiconductor; a flow path forming body that forms a flow path with an outer surface of the case; a first fixing material in contact with a refrigerant flowing in the flow path; and a second fixing material that is in contact with the first fixing material and the flow path forming body and covers a direction of displacement of the case of the first fixing material caused by water pressure.

Power semiconductor module, power conversion device using same, and method for manufacturing power conversion device

An object is to provide the structure of an ECU enabling resin to be filled without deformation of an electronic circuit board. A resin-sealed vehicle-mounted control device includes: a circuit board; a base member housing the circuit board; and resin filled between the circuit board and the base member. The base member has: a base portion fixing the circuit board; and a side wall opposed to the side surface side of the circuit board. The resin is provided at least between the circuit board and the base portion. The side wall has an opening at any position on the side of the base portion from a position opposed to the side surface side of the electronic circuit board.

Resin-sealed vehicle-mounted control device

An internal combustion engine ignition coil according to the present invention includes: a central iron core; a primary coil disposed on an outer circumference of the central iron core; a secondary coil disposed on an outer circumference of the primary coil; a side iron core disposed on an outer circumference of the secondary coil; and an insulating material sealing the central iron core, the primary coil, and the secondary coil on an inner side of the side iron core. A first layered silicate having a particle diameter less than a winding diameter of the secondary coil is present at a higher concentration in a vicinity of the secondary coil than that in a vicinity of the side iron core in the insulating material. A second layered silicate having a particle diameter greater than the winding diameter of the secondary coil is present at a higher concentration than that of the first layered silicate between the outer circumference side of the secondary coil and the side iron core. The second layered silicate has an aspect ratio of 50 or more, the aspect ratio being a ratio of a long side of a particle of the layered silicate to a thickness of the particle.

Internal combustion engine ignition coil and method for manufacturing internal combustion engine ignition coil

An object of the present invention is to provide a power conversion device that suppresses a bypass flow and has superior heat dissipation performance. The power conversion device according to the present invention includes a power semiconductor moduleand a flow channel formation bodyon which the power semiconductor moduleis disposed. The power semiconductor modulehas a high thermal conductorwhich is disposed at a position between a semiconductor chip and the flow channel formation bodyand a sealing material that seals a power semiconductor element and the high thermal conductor. The high thermal conductorhas a fin protruding to the flow channel formation bodyat the side of the flow channel formation bodyand a part of the sealing material surrounding the fin and a leading edge of the fin are on almost the same plane.

Power conversion device

An object of the present invention is to provide a power module capable of realizing a superior heat radiation property while satisfying a high insulation property. A power module according to the present invention includes: a conductor plate to which a switching element is connected; a heat radiation plate which is disposed to face the conductor plate; an insulating member which is disposed between the conductor plate and the heat radiation plate; and a conductive intermediate conductor which is disposed in the insulating member in a state of being electrically insulated from the conductor plate and the heat radiation plate, wherein the intermediate conductor has a communication region which communicates between the insulating member disposed on the side of the conductor plate with respect to the intermediate conductor and the insulating member disposed on the side of the heat radiation plate with respect to the intermediate conductor.

Power module

Growing community of inventors

Tokyo, Japan

Nobutake Tsuyuno