Sony Corporation

Nobutaka Okano

Hironobu Narui

Katsunori Yanashima

Tomonori Hino

Noriyuki Futagawa

Takao Miyajima

Takaaki Ami

Shigetaka Tomiya

Akira Ohmae

Michinori Shiomi

Izuho Hatada

Yuuji Hiramatsu

A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.

Method for growing a nitride-based III-V group compound semiconductor

Growing community of inventors

Kanagawa, Japan

Nobutaka Okano