Oki Electric Industry Co., Ltd.

Nobusuke Yamamoto

Tadashi Saito

Seiichi Takahashi

Shinichi Hoshi

Kazuyuki Inokuchi

Yuko Itoh

Nobumasa Higemoto

A method of controlling characteristics of a compound semiconductor device, whereby the compound semiconductor device is formed so as to include a plurality of resistors having the same ratio of a difference between a surface area of a corresponding resistivity region and the combined overlapping surface area of a corresponding pair of electrodes to the combined overlapping surface area of the corresponding pair of electrodes. In this manner, a resistivity of a resistor is precisely controlled.

Compound semiconductor device and method for controlling characteristics of the same

A semiconductor device fabrication process includes forming a Schottky layer, a cap layer covering the surface of the Schottky layer, and a Schottky electrode of a two-level structure having a lower portion that penetrates through the cap layer and reaches the Schottky layer, and having an upper portion larger than the lower portion in cross-sectional area and that overlies the cap layer. With this construction, surface defects are unlikely to occur, so that a highly reliable semiconductor device can be fabricated.

Semiconductor device and process of fabricating same

A compound semiconductor device is formed having a plurality of FETs exhibiting the same electrode ratio of a difference between a surface area of the active region and the combined overlapping surface area of the source and drain ohmic electrodes to the combined overlapping surface area of the source and drain ohmic electrodes. As such, precise control of a threshold voltage of the FETs is achieved. The compound semiconductor device is also formed so as to include a plurality of resistors having the same ratio of a difference between a surface area of the resistivity region and the combined overlapping surface area of the pair electrodes to the combined overlapping surface area of the pair electrodes. In this manner, a resistivity of the resistor is precisely controlled.

A semiconductor device includes a Schottky layer, a cap layer covering the surface of the Schottky layer, and a Schottky electrode of a two-level structure. The Schottky electrode has a lower portion that penetrates through the cap layer and reaches the Schottky layer, and has an upper portion larger than the lower portion in cross-sectional area and that overlies the cap layer. With this construction, surface defects are unlikely to occur, so that a highly reliable semiconductor device can be fabricated.

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Tokyo, Japan

Nobusuke Yamamoto