Canon Anelva Corporation

Nobuo Yamaguchi

Kazuaki Matsuo

Susumu Akiyama

Yoshimitsu Shimane

Kimiko Mashimo

Satoshi Uchino

Shinya Nagasawa

Naomu Kitano

Motomu Kosuda

Takashi Nakagawa

Naoki Yamada

Koji Tsunekawa

Heiji Watanabe

Takayoshi Shimura

Takuji Hosoi

Takuya Seino

Naoki Watanabe

Takashi Minami

Takaaki Tsunoda

Yukihiro Kobayashi

Yoshimitu Shimane

Disclosed is a sputtering apparatus having a target () disposed offset with respect to a substrate (), wherein the uniformity of a deposition amount can be ensured even when a substrate support holder () has a low number of rotations of several rotations to several tens of rotations and the amount of deposition is extremely small to provide such a film thickness of 1 nm or less. A control unit () is provided to control a rotational velocity V (rps) of the substrate support holder () to satisfy:by inputting the value of a deposition time T and the values of a total whole number of rotations N and a fractional number of rotations &#x3b1; which are expressed as:X=N+&#x3b1;

Sputtering apparatus and recording medium for recording control program thereof

A reactive sputtering apparatus includes a chamber, a substrate holder provided in the chamber, a target holder which is provided in the chamber and configured to hold a target, a deposition shield plate which is provided in the chamber so as to form a sputtering space between the target holder and the substrate holder, and prevents a sputter particle from adhering to an inner wall of the chamber, a reactive gas introduction pipe configured to introduce a reactive gas into the sputtering space, an inert gas introduction port which introduces an inert gas into a space that falls outside the sputtering space and within the chamber, and a shielding member which prevents a sputter particle from the target mounted on the target holder from adhering to an introduction port of the reactive gas introduction pipe upon sputtering.

Reactive sputtering apparatus

An apparatus includes a process chamber, a substrate holder arranged in the process chamber, a first shield provided on the peripheral portion of the substrate holder, and a second shield provided inside the process chamber. The internal space of the process chamber is partitioned into an outer space and a process space to process the substrate, by at least the first shield, the second shield, and the substrate holder. The substrate holder can be driven along a driving direction perpendicular to a substrate holding surface. The length, in a direction parallel to the driving direction, of a minimum gap portion having a minimum size in a direction perpendicular to the driving direction between the first and second shields does not change even if the substrate holder is driven in the driving direction.

Substrate processing apparatus

A deposition apparatus includes a shutter storage unit which is connected to a processing chamber via an opening and stores a shutter in the retracted state into an exhaust chamber, and a shield member which is formed around the opening of the shutter storage unit and covers the exhaust port of the exhaust chamber. The shield member has, at a position of a predetermined height between the opening of the shutter storage unit and a deposition unit, the first exhaust path which communicates with the exhaust port of the exhaust chamber.

Deposition apparatus and electronic device manufacturing method

An electronic device manufacturing method includes a first step of moving a substrate holder close to a first shield member and locating a first projecting portion formed on the first shield member and having a ring shape and a second projecting portion having a ring shape and formed on a second shield member installed on the surface of the substrate holder at the outer peripheral portion of a substrate at a position to engage with each other in a noncontact state, a second step of, after the first step, sputtering a target while maintaining the first projecting portion and the second projecting portion at the position to engage with each other in the noncontact state, and a third step of, after the second step, setting the first shield member in an open state and sputtering the target to perform deposition on the substrate.

Electronic device manufacturing method and sputtering method

It is an object of this invention to prevent a deposited film from adhering to an exhaust chamber so as to suppress the generation of particles. A sputtering apparatus () includes a shutter accommodation unit () which is detachably placed in an exhaust chamber () and accommodates a shutter () in a retracted state, and shield members () which at least partially cover the exhaust port of the exhaust chamber (), and are at least partially formed around an opening portion of the shutter accommodation unit ().

Sputtering apparatus and method of manufacturing electronic device

A mask alignment method for a substrate holding apparatus. A first engaging portion is formed in one of a substrate holder and a mask and has two protruding portions. A second engaging portion is formed in the other one of the substrate holder and the mask and has at least one protruding portion. First groove portions formed in the other one of the substrate holder and the mask engage with the protruding portions of the first engaging portion. A second groove portion formed in the other one of the substrate holder and the mask engages with the protruding portion of the second engaging portion. The mask alignment method includes the steps of (a) engaging the protruding portions of the first engaging portion with the first groove portions to align the mask with respect to the substrate holder in a first direction, and (b) engaging, after the step of engaging the protruding portions of the first engaging portion with the first groove portions, the protruding portion of the second engaging portion with the second groove portion, to align the mask with respect to the substrate holder in a direction perpendicular to the first direction.

Substrate holding apparatus, mask alignment method, and vacuum processing apparatus using long taper pins and short taper pins for alignment

This invention provides a sputtering method which can generate an electric discharge under practical conditions and maintain the pressure in a plasma space uniform, and a sputtering apparatus used for the same. The sputtering method includes a first gas introduction step (step S) of introducing a process gas from a first gas introduction port formed in a sputtering space defined by a deposition shield plate, a substrate holder, and the target which are disposed in a process chamber, a voltage application step (step S) of applying a voltage to the target after the first gas introduction step, and a second gas introduction step (step S) of introducing a process gas from a second gas introduction port formed outside the sputtering space.

Sputtering method and sputtering apparatus

Provided are a semiconductor device which enables reduction of diffusion of Si in the manufacturing process of an MIPS element and suppression of an increase in EOT, and a method of manufacturing the same. An embodiment of the present invention is a semiconductor device including a field effect transistor having a gate insulating film provided on a silicon substrate and a gate electrode provided on the gate insulating film. The gate electrode is a stack-type electrode including a conductive layer containing at least Ti, N, and O (oxygen) and a silicon layer provided on the conductive layer, and the concentration of oxygen in the conductive layer is highest in the side of the silicon layer.

Semiconductor device and manufacturing method thereof

A sputtering apparatus includes a target holder which is placed in a vacuum vessel and can hold a target configured to deposit a film on a substrate, a substrate holder which can mount the substrate, a first shield member which is disposed in a vicinity of the substrate holder, and configured to form a closed state in which the substrate holder and the target holder are shielded from each other, or an open state in which the substrate holder and the target holder are opened to each other, a first opening/closing driving unit adapted to open/close the first shield member to enter the open state or the closed state, a second shield member, having an annular-shaped, disposed on the surface of the substrate holder and an outer peripheral portion of the substrate, and a driving unit adapted to move the substrate holder in order to bring the substrate holder, on which the second shield member is disposed, close to the first shield member in the closed state. The first shield member has at least one annular-shaped, first protruding portion formed on it to extend in the direction of the second shield member. The second shield member has at least one annular-shaped, second protruding portion formed on it to extend in the direction of the first shield member. The first protruding portion and the second protruding portion fit together in a non-contact state at the position up to which the driving unit brings the substrate holder close to the first shield member.

Sputtering apparatus

A sputtering film forming method. which positions a targetandat an incline to a surface of a substratewhereupon a film is to be formed, and forms the film upon the surface of the substratewhereupon the film is to be formed in an incline direction while the substrateis rotated about a normal axis, terminates the forming of the film at a predetermined timing from the commencement of the forming of the film, wherein the forming of the film is terminated, when the substrate has rotated by 360 degrees&#xd7;n+180 degrees+&#x3b1;, where n is a natural number, including 0, and &#x2212;10 degrees&#x3c;&#x3b1;&#x3c;10 degrees.

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Tama, Japan

Nobuo Yamaguchi