Applied Materials, Inc.

Nobuo Tokai

Yuji Maeda

Errol Antonio C Sanchez

Lee Luo

Aihua Chen

Koji Nakanishi

R Suryanarayanan Iyer

Xiaoliang Jin

Janardhanan Anand Subramony

Masayuki Hashimoto

Randhir P Singh Thakur

Ichiro Kawai

Chang-Lian Yan

On a wafer holding areaon the upper surface of a susceptora wafer W is supported by a wafer supportsuch that a gap with a predetermined distance is formed between the wafer W and a wafer heating surfaceA projectionthat decreases the distance of the gap with respect to the wafer W is formed on the wafer heating surfaceAt this time, the heating condition for the wafer W by the susceptoris adjusted by means of the distances of the gaps at the respective portions of the wafer holding area. Thus, the uniformity of the planar temperature distribution of the wafer W and that of the thickness distribution of the formed film can be improved.

Semiconductor-manufacturing apparatus

A silicon comprising film and its method of fabrication is described. The silicon comprising film is grown on a substrate. A hexachlorodisilane (HCD) source gas is one of the reactant species used to form the silicon comprising film. The silicon comprising film is formed under a pressure between 10 Torr and 350 Torr.

Methods for forming silicon comprising films using hexachlorodisilane in a single-wafer deposion chamber

An object of the present invention is to provide a film-forming method, a film-forming system, etc. capable of achieving adequate thickness repeatability and uniformity and sufficiently large film-forming rates in film formation of a thin film on a substrate to be treated and also capable of simplifying a system configuration. A thermal treatment system according to the present invention is a system for forming a thin film of SiO on an Si wafer W and is provided with a reactant gas exhaust system for reducing the pressure around the Si wafer W, a reactant gas supply system for supplying hydrogen gas Gh and oxygen gas Go so as to mix them, onto the Si wafer W, and a chamber having a lamp group G for heating the Si wafer W, and a wafer support member The Si wafer W is set in the chamber the interior of the chamber is depressurized, the Si wafer W is mounted on the wafer support member the reactant gases X as a mixture of hydrogen gas Gh and oxygen gas Go are supplied into a space Sb in the chamber to flow, and the Si wafer W is heated by the lamp group G.

Method and system for forming film, semiconductor device and fabrication method thereof

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Nanta, Japan

Nobuo Tokai