Ball Semiconductor Corporation

Small Power Communication Systems Research Laboratories Co., Ltd.

Ball Wave Inc.

Other

Nippon Steel Corporation

Research Development Corporation of Japan

Zaidan Hojin Handotai Kenkyu Shinkokai

Nobuo Takeda

Jun-ichi Nishizawa

Kazushi Yamanaka

Yusuke Tsukahara

Shingo Akao

Toshihiro Tsuji

Toru Oizumi

Tatsuhiro Okano

Hideyuki Fukushi

Kohei Tatsumi

Eiji Hashino

Kenji Shimokawa

Atsuyuki Fukano

Nagisa Sato

Tadahiro Ohmi

Shigeru Nakamura

Junichi Nishizawa

Masayoshi Esashi

Sohbe Suzuki

Akihito Ishikawa

Masataka Yoshida

Eiji Matsunaga

Takao Murakoshi

Tomoki Tanaka

Osamu Hirayama

Kiichi Hirano

Toshiyuki Kishine

Takamitsu Iwaya

Maki Sugawara

A system for calibrating a moisture sensor encompasses a processing unit (). The processing unit () includes a reference data obtaining LCKT (), a subject data obtaining LCKT () and a relationship calculating LCKT (). The reference data obtaining LCKT () obtains reference data, after injecting water-vapor with known concentrations into an analyzer. The subject data obtaining LCKT () measures subject data indicating temporal variation of output-responses of a subject sensor element of the analyzer under test. The relationship calculating LCKT () compares the subject data with the reference data, and calculates relationships between the output-responses of the subject sensor element and the known concentrations.

System, method and program for calibrating moisture sensor

System and method for measuring a gas concentration are provided. A ball sensor generates a collimated beam of a surface acoustic wave including fundamental wave of first frequency and harmonic wave of second frequency, which propagates through a orbital path on piezoelectric ball while passing through sensitive film to adsorb a target gas. Temperature control unit controls ball temperature of the ball sensor. Signal processing unit transmits a burst signal to sensor electrode of the ball sensor to excite the collimated beam, receives burst signals after the collimated beam has propagated a predetermined number of turns around the piezoelectric ball, and calculates the gas concentration and the ball temperature by first and second relative changes in delay times of the first and second frequencies, respectively, using waveform data of the burst signals.

System, method and computer program product for measuring gas concentration

A collimated beam () of a surface acoustic wave propagates on a piezoelectric substrate () while passing through sensitive film () to adsorb a sensing gas. Signal processing unit () transmits an exciting burst signal to sensor electrode () to excite the collimated beam (), receives first and second returned burst signals after the collimated beam () has propagated, and calculates a target gas parameter by a target leakage factor of the background gas and a relation between reference gas parameters and reference leakage factors of reference gases, the leakage factor is provided by first and second attenuations of the first and second returned burst signals, respectively, using waveform data of the first and second returned burst signals.

System, method and computer program product for gas analysis

A standard-moisture generator includes a flow controller configured to control a flow of a gas, a dryer connected to the flow controller, configured to absorb water molecules in the gas and to generate a dry gas having a background moisture, a moisture cell connected to the dryer, configured to add an object moisture to the dry gas, and a delay member connected to the moisture cell, configured to pass the dry gas with a delay time depending on a concentration of the background moisture in the dry gas.

Standard-moisture generator, system using the standard-moisture generator, method for detecting abnormality in standard-moisture and computer program product for detecting the abnormality

A spherical semiconductor device includes a spherical semiconductor element having one or more electrodes on its surface. Spherical conductive bumps are formed at the positions of the electrodes. The electrodes are so arranged as to contact a common plane. Spherical bumps constituting a group to be connected to the outside protrude above the spherical semiconductor element such that a predetermined gap is formed between a plane or a spherical surface capable of contacting the spherical bumps and the surface of the spherical semiconductor element. The spherical semiconductor device is connected to various circuit boards or another semiconductor device through the spherical bumps. This affords easy and accurate electrical connections to the outside.

Spherical semiconductor device and method for fabricating the same

An object is to provide an accelerometer or a spherical sensor-type measurement device, able to control by means of an active restraining control system a spherical mass part or a spherical sensor part. The accelerometer or spherical sensor-type measurement device has a spherical mass part, which is levitated by electrostatic supporting forces, and electrodes positioned so as to surround the spherical mass part and which have spherical inner surfaces; the above electrodes include a plurality of electrostatic supporting electrodes, positioned symmetrically with respect to the spherical mass part, and a displacement detection electrode, positioned between the electrostatic supporting electrodes.

Accelerometer and spherical sensor type measuring instrument

A system and method is disclosed for coating a conventional wafer or a spherical shaped semiconductor substrate with liquid material such as photoresist by utilizing a &ldquo;drop on demand&rdquo; piezo driven dispense nozzle, a bubble-jet dispense nozzle, or a continuous piezo jet with charging electrodes. The proposed system and method will greatly reduce, and in some cases virtually eliminate, the waste of photoresist in the process.

Jet coating method for semiconductor processing

A system and a method for focusing an image onto the surface of a nonplanar substrate or device, such as a spherical semiconductor substrate, that substantially eliminates misalignment and overlapping problems between neighboring images. The system includes a plurality of mirrors arranged in a ring, a support reciprocatingly positioned relative to the center of the ring of mirrors for positioning the nonplanar substrate or device relative to the ring of mirrors. The nonplanar substrate or device is positioned such that each mirror will be capable of reflecting a focused image onto the surface of the substrate. The image is generated using a mask positioned relative to the ring of mirrors and illuminated to project the image onto the surface of the nonplanar substrate or device. The method includes the steps of positioning the nonplanar substrate or device within a ring of mirrors; creating a mask having a plurality of segments, wherein each segment has stitching interconnection, and projecting an image of the mask onto the ring of mirrors such that the image is reflected onto the surface of the nonplanar substrate or device.

Reflection system for imaging on a nonplanar substrate

A method for designing a circuit on a spherical shaped semiconductor integrated circuit using uniform unit shapes capable of cover the surface of the sphere in a matingly corresponding orientation with adjacent unit shapes. The method includes the steps of designing a circuit within each unit shape selected from various types of unit shape patterns; selecting a predetermined number of those unit shapes from the various types of unit shape patterns; and covering the spherical integrated circuit with the predetermined number of unit shapes. Furthermore, the designer can use the unit shapes to navigate over the surface to accurately determine the location, the position, and surface area remaining.

Spherical cell design for VLSI circuit design on a spherical

A notched insulation gate static induction transistor integrated circuit ording to the present invention comprises an enhancement mode CMOS logic circuit including a notched insulation gate static induction transistor in which a threshold voltage is determined to prevent current from flowing in a standby mode, and a depletion enhancement mode CMOS logic circuit including a notched insulation gate static induction transistor in which a threshold voltage is determined to cause current to slightly flow in the standby mode. The enhancement mode CMOS logic circuit and the depletion enhancement mode CMOS logic circuit are formed on a major surface of a substrate, and the depletion enhancement mode CMOS logic circuit is used in a circuit in which an average power consumption in a switching operation is higher than that in the standby mode.

Notched insulation gate static induction transistor integrated circuit

A tungsten film is formed in two steps in a tungsten chemical vapor deposition method of the present invention. In a first step, a first thin tungsten film is selectively grown on a surface of a silicon substrate by a silicon reduction using a WF.sub.6 gas as a tungsten source, followed by a second step in which another tungsten film is formed on the first tungsten film by a silane reduction using a WF.sub.6 gas as a tungsten source. The state of the silicon substrate surface is monitored by a pyrometer, and the timing of change from the silicon reduction to the silane reduction is determined on the basis of the intensity of the infrared ray radiation.

Tungsten chemical vapor deposition method

This invention provides a step cut type insulated gate static induction tsistor having a first main electrode formed in one major surface of a semiconductor substrate, a second main electrode formed in a bottom portion of a U-shaped groove formed in one major surface of a semiconductor substrate, a control electrode formed on a side wall of the U-shaped groove and consisting of a thin insulating film and a polysilicon layer, and a low-resistance electrode of a refractory metal layer or a refractory metal silicide layer formed in at least part of the side wall of the polysilicon layer of the control electrode.

Method of manufacturing step cut type insulated gate SIT having

A step-cut insulated gate static induction transistor can accurately make a channel length and a gate length and is excellent as a high speed transistor but is greatly affected by a deviation in mask alignment in the manufacturing process. This invention utilizes the fact that a gate portion formed in a previous processes is used as a mask in a post portion to thereby self-adjustably form the post portion, thus eliminating the influence of the deviation in mask alignment. In addition, a construction has been invented in which a current flowing through a portion apart from a gate between a drain and a source can be restricted. The aforesaid manufacturing method is also used for this improved construction.

Growing community of inventors

Sendai, Japan

Nobuo Takeda