Oki Electric Industry Co., Ltd.

Oki Semiconductor Co., Ltd.

Lapis Semiconductor Co., Ltd.

Nobuo Ozawa

Takasumi Kobayashi

Hatsumi Ito

An inclination position sensor where, on a substrate on which wires are formed, plural electrodes electrically connected to the wires are disposed, a conductive ball that can simultaneously contact at least two of the plural electrodes is disposed, an enclosure that covers the plural electrodes and the conductive ball is disposed, and a circular arc is formed in places of the electrodes that contact the conductive ball.

Inclination position sensor and inclination position sensor manufacturing method

There is provided an electronic part that has a substrate, an insulating layer formed on the substrate and a pad formed on the insulating layer and is electrically connected with an external terminal and that further includes a cavity formed at least at either one of the substrate corresponding to a bottom surface of the electrode pad and a region of the insulating layer. It provides a highly reliable electronic part, its fabrication method as well as an acceleration sensor using the electronic part and its fabrication method.

Electronic part, method for fabricating electronic part, acceleration sensor, and method for fabricating acceleration sensor

An impact sensor comprises a silicon substrate; an insulating layer formed over the silicon substrate; a plurality of beams having flexibility that are formed of conductive silicon material; a fixing portion to fix a fixed end of each of the beams, the fixing portion being formed of conductive silicon material; a fixed end line at whose one end is formed the fixing portion, the fixed end line being formed of conductive silicon material on the insulating layer; and a free end line having a pressing portion that faces a free end of each of the beams via a space, the free end line being formed of conductive silicon material on the insulating layer. Respective beam widths, each measured in a direction orthogonal to a length direction joining the fixed end and the free end, of the plurality of beams are set different from each other, thus reducing the space occupied by the sensor.

Impact sensor and method for manufacturing the impact sensor

A method that forms individual semiconductor devices from a semiconductor substrate including a first face having a first region in which micro-mechanical elements are formed and a second region which surrounds the first region and in which a scribe line is formed, and a second face having a third region which is opposed to the first face and corresponds to the first region in which the micro-mechanical elements are formed and a fourth region which surrounds the third region and corresponds to the second region. The method includes thinning the fourth region of the second face which corresponds to the scribe line formed in the second region of the first face, and cutting the semiconductor substrate along the scribe line formed in the second region of the first face.

Method for forming individual semi-conductor devices

An acceleration sensor includes a base portion shaped into the form of a frame, a weight portion located inside the base portion and disposed away from the base portion, a flexible beam portion disposed over an upper portion of the base portion and an upper portion of the weight portion and a stopper portion disposed above the base portion and disposed over the weight portion away from the weight portion, wherein the stopper portion restricts an amount of displacement of the weight portion in the direction of the stopper portion.

Acceleration sensor

There is provided a compact, high-sensitivity acceleration sensor. The acceleration sensor includes a weight, a pedestalarranged around the periphery of the weight, a support frameformed to have a width narrower than the width of the pedestalall around its perimeter, a massattached to the weightto retain the weightinside the support frame, beamsconnecting the support frameand the massand overlapping the pedestalnear their ends on the side of the support frame, and a peripheral interlayerarranged between the support frameand the pedestalto create a predetermined clearance between the pedestaland the parts of the beamsthat overlap the pedestal

Acceleration sensor and manufacturing method thereof

This invention provides a method for manufacturing an electric capacitance type acceleration sensor capable of achieving high productivity in which a semiconductor manufacturing process is used. More specifically, this invention provides a method for manufacturing an electric capacitance type acceleration sensor comprising the steps of: forming a p-type low resistance layerfor diffusing thermally a boron ion by implanting the boron ion into the surface of an n-type single crystal silicon; etching the p-type low resistance layerto leave a beam partand a partto be a movable electrode; forming a silicon oxide layerto be a sacrificial film, a fixed electrode layerand a silicon nitride film layeron the surface of the silicon substrate; etching anisotrophically from the rear surface of the silicon substrate by KOH solution making the p-type low resistance layer stop etching; and forming a hollow layerby removing the silicon oxide filmby using a hydrofluoric acid solution from the rear surface of the silicon substrate.

Method for manufacturing electric capacitance type acceleration sensor

A method of manufacturing a semiconductor device using a shallow trench isolation (STI) process comprises the steps of depositing a Si3N4 film ( ) by a chemical vapor deposition (CVD) process, polishing a CVD oxide film ( ) by a chemical mechanical polishing (CMP). The method further comprises the steps of planarizing with an organic spin-on-glass (SOG) film ( ) a rough surface of the silicon substrate resulting from a pattern dependency of polished amounts in the CMP process and etching back evenly the organic SOG film ( ) and the CVD oxide film ( ) buried in the trench at an etching selectivity ratio of 1.

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Tokyo, Japan

Nobuo Ozawa