Sumitomo Electric Industries, Limited

Nobuo Ogasa

Akira Ohtsuka

Yoshinari Amano

Mituo Osada

Akira Yamakawa

Yoshihiko Doi

Mitsuo Osada

Tadashi Igarashi

Akira Ohtusuka

This invention relates to a substrate for semiconductor apparatus loading a semiconductor chip in integrated circuit apparatus and is characterized in that a sintered compact containing copper of 2 to 30 wt. % in tungsten and/or molybdenum is used as the substrate having the heat radiation capable of efficiently radiating heat developed from the loaded semiconductor chip and thermal expansion coefficient similar to those of semiconductor chip and other enclosure material except for the substrate.

Substrate for semiconductor apparatus

This invention relates to a substrate for semiconductor apparatus loading a semiconductor chip in an integrated circuit apparatus and is characterized in that a sintered compact containing copper of 2 to 30 wt. % in tungsten and/or molybdenum is used as the substrate having the heat radiation capable of efficiently radiating heat developed from the loaded semiconductor chip and thermal expansion coefficient similar to those of semiconductor chip and other enclosure material except for the substrate.

This invention relates to a substrate for mounting a semiconductor chip in an integrated circuit wherein a sintered compact containing copper at 2 to 30 wt. % and tungsten and/or molybdenum is employed as a substrate which efficiently radiates heat developed from the semiconductor chip mounted thereon and said substrate having a thermal expansion coefficient similar to those of semiconductor chip and other enclosure materials.

A metallized layer is to be formed on a surface of an aluminum nitride base material, which may be a sintered body or a nonsintered compact. A mixture is prepared from an oxide component consisting of at least one of Al.sub.2 O.sub.3, SiO.sub.2, CaO, and Y.sub.2 O.sub.3, an iron family component consisting of at least one of Fe, Co and Ni and high melting temperature metal consisting of W and Mo. The content of each component is within a specified range. A paste is prepared by adding an organic binder substance to the mixture. The paste is applied to the surface of the base material and heated under specified conditions to form a metallized layer having a high adhesive peel strength on the surface of the base material.

Forming a metallized layer on an AlN substrate by applying and heating a

A ceramic electrically insulating circuit board (1) has an electrically conductive plug (4a) tightly filling a through-hole (2) formed in the circuit board (1) made of aluminum nitride including a low, up to 1% by weight at the most, content of an oxide phase as a sintering assistant. The conductive plug is formed by putting high melting point metal paste (10) into the through-hole and sintering either the board prior to the metal paste or sintering both, the board and the paste, simultaneously. Then, causing melted copper or copper alloy (11) to permeate into gaps or interstices in the sintered high-melting point metal plug to form a tight seal of the hole and good electrical contacts of the conductive plug and any circuits on both sides of the board.

Ceramic circuit board and a method of manufacturing the ceramic circuit

Substrate for semiconductor apparatus having a composite material

The invention relates to semiconductor chip mounting substrate for use in semiconductor apparatus, wherein metal material or multi-laminated metal material is coated on its surface and/or lateral faces with thin film of insulated inorganic matter in order to obtain an insulated substrate not only capable of efficiently radiating the heat developed in the semiconductor chip but also having thermal expansion coefficient approximate to that of the semiconductor chip, or further coated with film of Cu or Al so that the substrate is provided with high thermal conductivity and required thermal expansion characteristics thereby enabling to produce semiconductor apparatus highly effective for the acceleration of increase of density, reduction of size and improvement of radiation of IC.

Growing community of inventors

Itami, Japan

Nobuo Ogasa