Sony Corporation

Kabushiki Kaisha Toshiba

Canon Kabushiki Kaisha

Sony Semiconductor Solutions Corporation

Sumitomo Metal Mining Company, Ltd.

Other

Nobuo Nakamura

Hiroki Sato

Keiji Mabuchi

Hiroaki Fujita

Takashi Abe

Eiichi Funatsu

Tomoyuki Umeda

Yoshiyuki Matsunaga

Hirofumi Yamashita

Shinji Ohsawa

Shoji Kawahito

Junichi Kanai

Yukio Endo

Hiroki Miura

Mizuho Higashi

Yoshitaka Egawa

Ikuko Inoue

Nagataka Tanaka

Tetsuya Yamaguchi

Tetsuya Iizuka

Hidetoshi Nozaki

Hisanori Ihara

Yoriko Tanaka

Manabu Ando

Ryoji Suzuki

Fumihiko Koga

Hirofumi Sumi

Yasushi Maruyama

Sozo Yokogawa

Satoshi Yuasa

Hayato Wakabayashi

Yoshiki Ebiko

Yoshiaki Nishimura

Hiroshi Naruse

Nobuhiro Kawai

Hidenori Shibata

Akiko Nomachi

Yoshiyuki Shioyama

Hideki Inokuma

Yuhi Yorikado

Masako Hori

Katsuo Kawano

Suzunori Endo

Akira Makabe

Seigo Abe

Jyunji Takashita

Ken Nakajima

Ken Koseki

Ryohei Miyagawa

Hironori Yamamoto

Takeshi Kawamura

Michio Sasaki

Masahiko Miyamoto

Tomio Kajigaya

Tadashi Sugiki

Hideaki Miyauchi

Hiroshi Hatanaka

Toru Imanari

Takashi Kozakai

Takamasa Wada

Fumio Shimizu

Shuuji Oosumi

Yasutaka Nomi

Junji Takashita

Makoto Aoki

Tomonori Mori

Takao Abe

Takashi Miyamoto

Kazuo Watanabe

Katsuaki Hirota

Fumio Izawa

Yohji Watanabe

Daijiro Anai

Koichiro Maki

Haruhisa Naganokawa

Makoto Hoshino

Kenya Kondou

Kinya Oigawa

Akira Nakamatsu

Yoshihito Koya

Nahoko Endo

Yoko Okuzaki

Yasushi Nakamoto

Tsuyoshi Arakawa

Yoshiyuki Tomizawa

Natsue Sakaguchi

Yoshitane Tsuchiya

Hirotaka Fuse

Koushi Shinoda

Syouhei Taguchi

Masahiko Miyamato

Seitaro Okano

Kenzo Matsuzaka

Toshiki Itagaki

Shin Hotta

Nobuyuki Satou

A light receiving element including: a semiconductor substrate; a photoelectric conversion unit (PD) in the semiconductor substrate that converts light into electric charges; a first electric charge accumulation unit (MEM) in the semiconductor substrate to which the electric charges are transferred from the photoelectric conversion unit; a first distribution gate on a front surface of the semiconductor substrate that distributes the electric charges from the photoelectric conversion unit to the first electric charge accumulation unit; a second electric charge accumulation unit (MEM) in the semiconductor substrate to which the electric charges are transferred from the photoelectric conversion unit; and a second distribution gate on the front surface of the semiconductor substrate that distributes the electric charges from the photoelectric conversion unit to the second electric charge accumulation unit, in which the first and second distribution gates each have a pair of buried gate portions.

Light receiving element and light receiving device

To provide a light receiving element including: a photoelectric conversion unit (PD) that is provided in a semiconductor substrate and converts light into a charge; a first charge accumulation unit (MEM) to which the charge is transferred from the photoelectric conversion unit; a second charge accumulation unit (MEM) to which the charge is transferred from the photoelectric conversion unit, in which each of the first and second charge accumulation units includes a stack of an electrode, a first insulating layer, and a semiconductor layer.

Light receiving element and light receiving apparatus

The present technology relates to a solid-state imaging device, a signal processing method, and an electronic device enabling improvement of evidence capability of an image. The imaging device generates image information in a pixel unit, generates additional information to be added to the image information outputted from the pixel unit, and combines the additional information with the image information. The present technology can be applied to an imaging device including an image sensor.

Solid-state imaging device, signal processing method, and electronic device

In a light receiving device, a light receiving element includes a first photoelectric conversion unit (PD) that converts light into electric charges, a first electric charge storage unit (MEM) to which the electric charges are transferred from the first photoelectric conversion unit, a first distribution gate, a second electric charge storage unit (MEM) to which the electric charges are transferred from the first photoelectric conversion unit, and a second distribution gate, in which the first and second distribution gates are provided at positions axially symmetric to each other with respect to a first center axis extending so as to pass through the center of the first photoelectric conversion unit, in a direction intersecting the column direction at a predetermined angle, when viewed from above the semiconductor substrate.

Light receiving device

An imaging device including an electronic shutter and a pixel array with color pixels with different characteristics of spectral sensitivity arranged. The pixel array part has at least one clear pixel, the plurality of color pixels including at least two of (i) a first color filter pixel having a peak of spectral sensitivity characteristics for red, (ii) a second color filter pixel having a peak for blue, and (iii) a third color filter pixel having a peak for green. The clear pixel has a high transmittance arranged in an oblique pixel array system at a given position of a given row and a given column with respect to the first color filter pixel, the second color filter pixel, and the third color filter pixel. An electronic shutter is separately driven for the at least one clear pixel and for the plurality of color filter pixels.

Imaging device camera system and driving method of the same

An image sensor controls the gain of a pixel signal on a pixel-by-pixel basis and extends a dynamic range while maintaining a S/N ratio at a favorable level. A column unit in an image sensor is independently detects a level of each pixel signal and independently sets a gain for level of the signal. A photoelectric converting region unit has pixels arranged two-dimensionally with a vertical signal line for each pixel column to output each pixel signal. The column unit is on an output side of the vertical signal line. The column unit for each pixel column has a pixel signal level detecting circuit, a programmable gain control, a sample and hold (S/H) circuit. Gain correction is performed according to a result of a detected level of the pixel signal.

Solid-state image pickup device and control method thereof

A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell includes two pixels. Upper and lower photoelectric converters and, transfer transistors and connected to the upper and lower photoelectric converters, respectively, a reset transistor, and an amplifying transistor form the two pixels. A full-face signal line is connected to the respective drains of the reset transistor and the amplifying transistor. Controlling the full-face signal line, along with transfer signal lines and a reset signal line, to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.

Solid-state imaging device

Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back-side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back-side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

Solid state image pickup device and method of producing solid state image pickup device

Solid-state imaging device having voltage lines including openings corresponding to pixel units

A Faraday rotator excellent in productivity and also hardly causing an isolation function of an optical isolator to deteriorate even when the Faraday rotator is used in a high-power laser with a wavelength of 1.1 &#x3bc;m or less and an output of 1 W or more. The Faraday rotator comprises a non-magnetic garnet substrate; bismuth-substituted rare-earth iron garnet films grown respectively on both surfaces of the non-magnetic garnet substrate by a liquid phase epitaxial method; and sapphire crystal substrates bonded respectively to outer surfaces of the bismuth-substituted rare-earth iron garnet films, and configured to dissipate heat. The bismuth-substituted rare-earth iron garnet films has an absorption coefficient of 9 cmor less for light at a wavelength of 1.06 &#x3bc;m, and that the bismuth-substituted rare-earth iron garnet films grown on the respective surfaces of the non-magnetic garnet substrate differ from each other in film thickness by 10 &#x3bc;m or less.

Faraday rotator

[Object] To provide a polarization independent optical isolator enabling downsizing of a Faraday element and a magnet. [Solving means] The polarization independent optical isolator comprises: a pair of wedge-shaped birefringent crystal plates () provided in an optical path; and a Faraday element () made of a paramagnetic body and provided in the optical path between the wedge-shaped birefringent crystal plates. The pair of wedge-shaped birefringent crystal plates have inclined light-transmitting surfaces parallel to each other and non-inclined light-transmitting surfaces parallel to each other. The non-inclined light-transmitting surfaces are disposed to face the Faraday element. The polarization independent optical isolator is characterized in that: the paramagnetic body constituting the Faraday element has such a parallelogrammic cross section that light incident-emitting surfaces of the paramagnetic body are not parallel to the non-inclined light-transmitting surfaces of the pair of wedge-shaped birefringent crystal plates; and a right-angled portion () of each of the wedge-shaped birefringent crystal plates and a corresponding obtuse-angled portion () of the Faraday element are disposed on the same side with respect to an optical path central axis.

Polarization independent optical isolator

Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an acitve region may also be used for the registration mark. Thereafter, the registration mark is read from the back-side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back-side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

Solid-state imaging device with a plurality of photoelectric converters

Growing community of inventors

Kanagawa, Japan

Nobuo Nakamura