Nissin Electric Co., Ltd.

Nissin Ion Equipment Co., Ltd.

Semequip, Inc.

Semiquip, Inc.

Nobuo Nagai

Hilton Frank Glavish

Masao Naito

Koji Iwasawa

Thomas N Horsky

Sami K Hahto

Dale Conrad Jacobson

Nariaki Hamamoto

Mamoru Nogami

Takao Matsumoto

Makoto Nakaya

Tomoyasu Matsuno

Yoshio Tamura

Satoru Yuasa

Tadashi Kawai

Michael A Guerra

A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the selection aperture sufficient to enable selection of a beam of monatomic dopant ions of substantially a single atomic or molecular weight, the magnetic scanner and magnetic collimator being constructed to successively bend the ion beam in the same sense, which is in the opposite sense to that of the bend introduced by the analyzer magnet of the beam line.

Ion beam apparatus and method employing magnetic scanning

An ion implantation method includes scanning reciprocatingly an ion beam in an X direction by an electric field or magnetic field and mechanically driving reciprocatingly a substrate in a Y direction orthogonal to the X direction to implant ions over the entire surface of the substrate. A dose distribution that is non-uniform within the plane of the substrate is formed within the plane of the substrate by changing at least one of a scanning speed of the ion beam and a driving speed of the substrate within an area where the ion beam is incident on the substrate.

Ion implantation method and apparatus

A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the mass selection aperture sufficient to enable selection of a beam of monatomic dopant ions of substantially a single atomic or molecular weight, the magnetic scanner and magnetic collimator being constructed to successively bend the ion beam in the same sense, which is in the opposite sense to that of the bend introduced by the analyzer magnet of the beam line.

The ion implanting method uses both reciprocatively scanning an ion beam in an X direction and reciprocatively mechanically driving a substrate in a Y direction orthogonal thereto. An implanting step of implanting ions separately for two implanted regions with different dose amounts of the substrate is executed plural times by changing at the center of the substrate a driving speed of the substrate. A rotating step of rotating the substrate around its center by a prescribed angle is executed once during each of the intervals between the respective implanting steps and while the ion beam is not applied to the substrate.

Ion implanting method and apparatus

A holder driving device has: a holder holding a substrate, a shaft supporting the holder, a driver for driving the shaft reciprocatingly and linearly in the direction along the shaft, a bearing unit having mechanical linear motion bearings for supporting the shaft thereon and having one or more stages of exhaust chambers surrounding the shaft; a vacuum pump for vacuum-pumping the exhaust chambers of the bearing unit; and a gas replacement mechanism for supplying dry gas, the humidity of which is lower than that of at least the surrounding atmosphere and the pressure of which is positive, from the outside of the bearing unit to at least the neighborhood of an atmosphere-side entrance portion of a gap between an end portion of the bearing unit one the side opposite to the vacuum vessel and the shaft passing the end portion, so as to replace the atmosphere near the entrance portion by the dry gas.

Holder driving unit

Current density distributions of the ion beam in the scanning direction (the direction of X) at two points Z,and Z,on Z-coordinate are respectively measured by Faraday arrays. Using the thus measured current density distributions, a current density distribution in the scanning direction of the ion beam at an arbitrary position on Z-coordinate located in a workpiece is found by the method of interpolation. Using the thus found current density distribution, a waveform of scanning voltage V(t) of the ion beam is reformed so that a scanning speed of the ion beam can be relatively decreased at a position where the current density must be raised in the current density distribution and a scanning speed of the ion beam can be relatively increased at a position where the current density must be lowered. Due to the foregoing, a current density distribution in the scanning direction of the ion beam at an arbitrary position on Z-coordinate located in the workpiece is adjusted to a desired distribution.

Method for measuring distribution of beams of charged particles and methods relating thereto

A magnetic deflection system for scanning an ion beam over a selected surface comprising: a magnetic structure having poles with respective scanning coils and respective pole faces that define therebetween a gap through which the ion beam passes; a primary current source coupled to the scanning coils adapted to apply to the scanning coils an excitation current to generate a substantially unipolar oscillatory magnetic field in the gap that alternates in polarity as a function of time to cause scanning of the ion beam, the substantially unipolar magnetic field having a magnitude sufficiently greater than zero to prevent the transverse cross-section of the ion beam from substantially fluctuating in size while the ion beam is being scanned across the selected surface.

System and method for unipolar magnetic scanning of heavy ion beams

In an ion implantation apparatus comprising scanning electrodes for electrically scanning an ion beam in an X direction, a scanning power supply for supplying a scanning power to the scanning electrodes, a drive unit for mechanically scanning a target in a Y direction substantially perpendicular to the X direction, a beam current measurement device disposed at one end section of the scanning area of the ion beam for measuring a beam current of the ion beam, and a control unit for computing the scanning speed of the target based on the beam current measured by the beam current measurement device and for controlling the drive unit so that the target is driven at the computed speed, the control unit outputs a trigger signal whenever the computation process of the scanning speed of the target is completed, and the scanning power supply outputs the scanning power for one reciprocative scanning operation of the ion beam at every time the scanning power supply receives the trigger signal from the control unit.

Ion implantation apparatus

An ion implantation apparatus comprises: an implantation chamber into which an ion beam is entered, the ion beam being scanned in an X direction; a holder for holding a wafer in the implantation chamber; and a holder drive unit for mechanically scanning the holder in a Y direction substantially perpendicular to the X direction in the implantation chamber. The holder drive unit swingingly rotates the holder so that the wafer is mechanically scanned in the Y direction.

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Kyoto, Japan

Nobuo Nagai