Hitachi, Ltd.

Other

Adv Antest Corporation

Rikagaku Kenkyusko

Nobuo Miyamoto

Haruo Yoshida

Ushio Kawabe

Yutaka Harada

Eiichi Goto

Nobuo Kotera

Yasuhiro Maeda

Michiaki Endo

Michio Niwano

Mutsuko Hatano

Junji Shigeta

Tetsu Oi

Hideaki Nakane

Muneyasu Nakashima

A substrate treating method and apparatus which can perform in-situ monitoring of surface state of a semiconductor substrate. The substrate treating apparatus comprises substrate treating means for subjecting the substrate to a required treatment, means for condensing infrared radiation emitted by an infrared radiation source onto an outer peripheral part of the substrate and introducing the infrared radiation into the substrate, means for detecting the infrared radiation which has undergone multiple reflection inside the substrate and exited from the substrate, means for analyzing the detected infrared radiation, means for monitoring the surface state of the substrate, and control means for controlling the substrate treating means, based on the monitored surface state of the substrate.

Substrate treating method and apparatus

A surface state monitoring method and apparatus for performing in-situ monitoring of surface states of semiconductor substrates. The apparatus comprises condensing means for condensing infrared radiation to an outer peripheral part of the substrate-to-be-monitored; control means 80 for controlling an incident angle of the infrared radiation condensed by the condensing means ; condensing means for condensing the infrared radiation which has undergone multiple reflection in the substrate-to-be-monitored; detecting means for detecting the infrared radiation condensed by the infrared radiation condensing means , and analyzing means for analyzing the detected infrared radiation detected and measuring contaminants staying on the surfaces of the substrate-to-be-monitored.

Surface state monitoring method and apparatus

A foreign matter processing apparatus is disclosed for detecting a foreign matter sticking to the surface of a sample such as a circuit board. In the sample processing apparatus of the present invention, a fine foreign matter sticking to a surface of a sample is detected, and the composition of the detected foreign matter is analyzed. Then, it is determined based on a result of the analysis and various data registered in advance whether or not it is required to remove the foreign matter, and the foreign matter, whose removal has been determined to be required, is removed from the surface of the sample. Accordingly, detection, analysis and removal of a foreign matter on the surface of a sample can be performed by a single apparatus.

Detection and analysis of a fine foreign matter on a sample

A superconducting current detecting circuit which comprises a reference current generation circuit for generating a reference current and a DC flux parametron circuit for comparing an input current to be detected with the reference current to thereby produce pulses in synchronism with an input excitation signal, the number of the pulses being varied in accordance with a difference between the input current and the reference current, the pulses having positive or negative values depending on the polarity of the difference, the reference current generation circuit having means for increasing or decreasing the reference current by a quantity corresponding to the number of the pulses in response to the polarity of the pulses so that reference current generation circuit produces the reference current which agrees with the input current.

Superconducting current detecting circuit employing DC flux parametron

A superconducting switching circuit comprises a DCFP circuit composed of two Josephson junction elements constituting two current paths, respectively. Each of the current paths includes a resistor for suppressing resonance. A memory cell constituted by the DCFP circuit includes three Josephson junction elements constituting three current paths, respectively. Each of the current paths includes a resistor for suppressing resonance. A memory circuit comprises a number of memory cells of such a structure.

Superconducting switching circuit, memory cell and memory circuit, with

A method for producing an InSb thin film element comprising the steps of forming an InSb polycrystalline thin film on a substrate, melting and recrystallizing the InSb polycrystalline thin film at a temperature above the melting point of InSb, and disposing a diffusion source which contains at least one element selected from the group consisting of Cu, Au, Ag, Zn, Na, K, Cd, B, Li, Ca, Fe, Mg, Ba, Al and Pb and then heating the InSb thin film so as to dope it with the desired element or elements in a range in which the total quantity does not exceed a concentration of 1.times.10.sup.18 cm.sup.-3. The InSb thin film element produced by this method has a very little current noise and a high signal-to-noise ratio. Further more, simultaneous doping of the said predetermined element or said elements and sb is more effective to reduce the current noise.

Method for producing an InSb thin film element

A method for producing an InSb thin film element comprising the steps of (i) preparing a substrate at least one surface of which is made of alumina or an inorganic insulating material containing at least 12 mol % of alumina, and forming an InSb thin film of a thickness of at most 0.2 .mu.m on the surface of said substrate, (ii) depositing on said InSb thin film a film which is made of an inorganic insulating material containing at least 12 mol % of alumina, (iii) heating said InSb thin film above the melting point of InSb, and (iv) cooling said InSb thin film and recrystallizing InSb. The InSb thin film element thus produced has the InSb thin film whose thickness is at most 0.2 .mu.m, whose surface is flat and which has good electrical characteristics.

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Hachioji, Japan

Nobuo Miyamoto