Semiconductor Energy Laboratory Co., Ltd.

Merck Patent Gmbh

Sharp Kabushiki Kaisha Corporation

Merck Patent Gesellschaft MIT Beschrankter Haftung

Nobuo Kubo

Akiharu Miyanaga

Masahiro Iijima

Hongyong Zhang

Atsutaka Manabe

Atsushi Yoshinouchi

Hideo Ichinose

Seung-Eun Lee

Shinji Nakajima

Dagmar Klement

Yasushi Sugiyama

Takanori Takeda

Yukiomi Tanaka

Tsukasa Shibuya

The present invention relates to modulation elements for electromagnetic radiation and to modulation devices and systems comprising these devices, such as e.g. television screens and computer monitors, as well as to micrometer wave components. The modulation elements according to the invention comprise a mesogenic modulation medium with a dielectric anisotropy, which shows two or more distinct transitions upon application of an electric field. The mesogenic modulation media used in the modulation elements for electromagnetic radiation are also a subject of the present invention.

Modulation element comprising a mesogenic modulation medium having a cybotactic nematic phase that shows two distinct electro-optical transitions at one single temperature

Disclosed are a liquid-crystalline medium based on a mixture of dielectrically negative polar compounds of each of formulae I and II and the use thereof in an electro-optical display, particularly in a display with passive matrix addressing, based on a VA, ECB, PALC, FFS or IPS effect, and such displays.

Liquid-crystalline medium and liquid crystal display

To provide a semiconductor device that can effectively suppress the short channel effect without deterioration of carrier migration, an impurity ion is added from a direction of the &#x3c;110&#x3e; axis with respect to a silicon substrate on forming a punch through stopper under the gate electrode. In this invention, because the addition of the impurity is conducted by utilizing the principal of channeling, the impurity can be added with a small amount of scattering suppressing damage on the surface of the silicon substrate. A channel forming region having an extremely small impurity concentration and substantially no crystallinity disorder is formed.

Semiconductor device having impurity region

In a semiconductor device, pining regionsare disposed along the junction portion of a drain regionand a channel forming regionlocally in a channel width direction. With this structure, because the spread of a depletion layer from a drain side is restrained by the pining regions, a short-channel effect can be restrained effectively. Also, because a passage through which carriers move is ensured, high mobility can be maintained.

Semiconductor device and method of manufacturing the same

To provide a semiconductor device that can effectively suppress the short channel effect without deterioration of carrier migration, an impurity ion is added from a direction of the &#x3c;&#x3e; axis with respect to a silicon substrate on forming a punch through stopper under the gate electrode. In this invention, because the addition of the impurity is conducted by utilizing the principal of channeling, the impurity can be added a small amount of scattering suppressing damages on the surface of the silicon substrate. A channel forming region having an extremely small impurity concentration and substantially no crystallinity disorder is formed.

Semiconductor device and process for producing the same

Liquid-crystalline medium

In a semiconductor device, pining regions are disposed along the junction portion of a drain region and a channel forming region locally in a channel width direction. With this structure, because the spread of a depletion layer from a drain side is restrained by the pining regions a short-channel effect can be restrained effectively. Also, because a passage through which carriers move is ensured, high mobility can be maintained.

Semiconductor device and method of manufacturing the same including drain pinned along channel width

The invention provides a peripheral drive circuit integrated active matrix LCD device in which thin-film transistors have different characteristics optimized for individual circuits of the active matrix LCD device. A pixel matrix portion includes thin-film transistors, each having offset gate regions 134 and 136 produced in a non-self-alignment manner, an n-channel driver portion includes thin-film transistors, each having lightly-doped regions 128 and 130 produced in a combination of the non-self-alignment manner and a self-alignment manner, and a p-channel driver portion includes thin-film transistors produced in a self-alignment manner. This construction makes it possible to arrange the thin-film transistors having characteristics required by the individual circuits.

Growing community of inventors

Kanagawa, Japan

Nobuo Kubo