Canon Kabushiki Kaisha

Screen Holdings Co., Ltd.

Fujitsu Corporation

Nobuo Kawase

Takao Yonehara

Akira Sakai

Kiyofumi Sakaguchi

Masanori Suzuki

Kenji Nakagawa

Masahiro Miyagi

Hiroyuki Araki

Tomokatsu Sato

Nobuyoshi Tanaka

Keishi Saito

Takeo Ono

Takashi Miyake

Masakatsu Ohta

Osamu Iketa

Yoshiki Iwata

Masayoshi Aigo

Yoshinori Tanaka

Hiroshi Kawaura

Shigenori Ishihara

A processing liquid supplying apparatus is arranged to discharge a processing liquid from a discharge port to supply the processing liquid to a processing object, and the processing liquid supplying apparatus includes a first piping, through the interior of which the processing liquid can flow, the interior of the first piping being in communication with the discharge port, and an X-ray irradiating means irradiating X-rays onto the processing liquid present inside the first piping. The first piping has an opening in its pipe wall and the opening is closed by a window member formed using a material that can transmit the X-rays, and the X-ray irradiating means irradiates the X-rays onto the processing liquid present inside the first piping via the window member.

Processing fluid supply device, substrate processing device, processing fluid supply method, substrate processing method, processing fluid processing device, and processing fluid processing method

A method of manufacturing a semiconductor chip including an integrated circuit and a through-electrode penetrating a semiconductor layer includes the steps of preparing a first substrate including a release layer and a semiconductor layer formed on the release layer; forming an integrated circuit in the semiconductor layer; forming, in the semiconductor layer, a hole or groove having a depth that does not reach the release layer; filling the hole or the groove with an electrical conductor; bonding a second substrate to the semiconductor layer to form a bonded structure; separating the bonded structure at the release layer to prepare the second substrate to which the semiconductor layer is transferred; and removing at least a portion of the reverse surface side of the semiconductor layer exposed by the separation to expose the bottom of the electrical conductor.

Method of manufacturing semiconductor chip

A method of manufacturing a semiconductor device includes the steps of forming a plurality of first integrated circuits on the surface side of a first semiconductor substrate; forming a plurality of second integrated circuits in a semiconductor layer that is formed on a release layer provided on a second semiconductor substrate; bonding the two semiconductor substrates so that electrically bonding portions are bonded to each other to form a bonded structure; separating the second semiconductor substrate from the bonded structure at the release layer to transfer, to the first semiconductor substrate, the semiconductor layer in which the plurality of second integrated circuits are formed; and dicing the first semiconductor substrate to obtain stacked chips each including the first integrated circuit and the second integrated circuit.

Method of manufacturing semiconductor device

In order to improve the state of image irregularities of a liquid crystal panel, a plasma treatment is performed for an alignment film using a treatment gas such as hydrogen and/or deuterium, or a surface treatment is performed in which an alignment film is immersed in deuterium oxide. As a result, moisture contained in the alignment film is removed, and re-adsorption of moisture is also suppressed, thereby reducing image irregularities.

Manufacturing method of liquid crystal panel and deuterium, hydrogen deuteride, or tritium treatment of alignment film

Manufacturing method of liquid crystal panel and deuterium oxide surface treatment method of alignment film

A patterning method forms a pattern including a lyophilic region and a lyophobic region. The method includes treating the surface of an object by exposing an atmosphere containing at least one gas selected from the group consisting of hydrogen, deuterium, deuterated hydrogen, and tritium; partially exposing the treated surface to light to form an exposed region and an unexposed region; and applying a liquid onto one of the exposed region and the unexposed region.

Patterning method and methods for producing electro-optic device, color filter, illuminant, and thin-film transistor

A method for processing an object containing moisture is provided to efficiently remove the moisture and to prevent re-adsorption of the moisture. In particular, the method has a step of removing the moisture contained in the object in an atmosphere containing excited hydrogen, deuterium, deuterated hydrogen, or tritium.

Surface treatment method, manufacturing method of semiconductor device, and manufacturing method of capacitive element

This invention discloses an ingot cutting apparatus, wherein a crystalline ingot is positioned within an etching gas and a component of the etching gas is excited by illumination of light from a light source onto the crystalline ingot, thereby making a component of the etching gas react chemically with the component of the crystalline ingot and volatilizing the component of the crystalline ingot to cut the crystalline ingot and obtain wafers and wherein light from a light source is guided to the crystalline ingot via a sheet-like, bar-like, or fiber-like optical wave guide.

Base material cutting method, base material cutting apparatus, ingot cutting method, ingot cutting apparatus and wafer producing method

A weight detecting type sensor comprising a roller capable of partly jutting out upwardly from the surface of a body conveying belt, a strut rotatably supporting the roller and having a through-aperture at a portion thereof, a sensor having an optical axis associated with the through-aperture formed in the strut, and a pair of magnets disposed below the bottom of the strut.

Weight detecting type sensor

A quartz tube adapted for thermal processing of semiconductor substrates comprising a double-layered central tube having an external sintered crystalline quartz layer fused with a quartz layer of different quality, i.e. an internal transparent fused quartz layer. Both ends of the central tube are fused with the ends of two transparent fused quartz end tubes. The double-layered tube portion can be produced by compacting quartz particulates by means of centrifugal force within a mould and heating from the center with or without placing a fused quartz tube on its inner surface. Semiconductor substrates are processed using this quartz tube, thereby semiconductor devices having stabilized high qualities are produced at an increased yield as well as at a low cost.

Growing community of inventors

Yokohama, Japan

Nobuo Kawase