Fujitsu Corporation

Fujitsu Isotec Limited

Fijitsu Limited

Suzuki, Hitoshi

Niwa, Koichi

Ogawa, Hiromi

Kamehara, Nobuo

Yokoyama, Hiromitsu

Tsukada, Mineharu

Nobuo Kamehara

Koichi Niwa

Kishio Yokouchi

Hiromitsu Yokoyama

Kazuaki Kurihara

Yoshihiko Imanaka

Mineharu Tsukada

Kazunori Yamanaka

Hitoshi Suzuki

Hiromi Ogawa

Atsushi Tanaka

Masato Wakamura

Takuya Uzumaki

Koji Omote

Motoyuki Nishizawa

Hiroshi Kamezaki

Junichi Kasai

Masataka Mizukoshi

Yasuo Yamagishi

Michio Sono

Kaoru Hashimoto

Masayuki Ochiai

Ichiro Yamaguchi

Koki Otake

Mitsutaka Yamada

Kazuhiko Mitobe

Kyohei Murakawa

Hidefumi Ueda

Takato Machi

Masaharu Hida

Seiichi Yamada

Keiji Watanabe

Yutaka Yamada

Yoshihiro Nakata

Norio Sawatari

Yukio Takigawa

Yuji Yoshida

Akio Yano

Wataru Yamagishi

Masahiro Ono

Akihiko Miyaki

Kazuki Ogawa

Susumu Abe

Shigeaki Yagi

Yasuo Numata

Hiroshi Makihara

Etsuro Udagawa

First and second ball forming plates are prepared. The cavities of the first plate and the cavities of the second plate are filled with solder paste, respectively. The first plate and the second plate are placed in a facing relationship to each other and heated to form metal balls each of which corresponds to the total metal components of the solder paste in one cavity of the first plate and one cavity in the second plate. The metal balls are formed in the cavities of the lower plate . The metal balls are transferred from the cavities of the first plate to a device on which bumps are to be formed.

Bump-forming method using two plates and electronic device

A coolant for cooling a semiconductor element by direct immersion, cooling, which has an improved cooling capability, is disclosed. The coolant comprises a low boiling point fluorocarbon having a boiling point of 30&deg; C. to 100&deg; C. and a high boiling point fluorocarbon having a boiling point higher than that of the low boiling point fluorocarbon by at least 100&deg; C.; an amount of the high boiling point fluorocarbon being less than 20% by volume, based on the volume of the low boiling point fluorocarbon.

Immersion cooling coolant

In a method of manufacturing piezoelectric ceramics by molding pre-fired or calcined powders of ingredients of a piezoelectric ceramic material and sintering the powder mold at a high pressure, the powder mold is pre-sintered at an atmospheric pressure before sintering at high pressure (HIP). Preferably, after the sintering HIP step, a thermal treatment is performed at a temperature of from 500 to 1000.degree. C. under an oxidizing atmosphere. For a Pb(Zn.sub.1/3 Nb.sub.2/3)O.sub.3 --PbTiO.sub.3 based piezoelectric ceramic, the composition is preferably set to (Pb.sub.1-x Ba.sub.x)[(Zn.sub.1/3 Nb.sub.2/3).sub.1-y Ti.sub.y ]O.sub.3, where 0.001&lt;x&lt;0.055 and 0.05&lt;y&lt;0.20.

Method of manufacturing piezoelectric materials

A piezoelectric device including an insulating substrate and a displacement layer formed on the insulating substrate including a first electrode, a piezoelectric layer and a second electrode laid on the insulating substrate in the stated order, a part of a surface of the piezoelectric device in a region where the first and the second electrodes overlap each other is projected out of the rest part of the surface. The multi-layer body has a pair of high rigidity plates each provided on a side-wall for securing the multi-layer body.

Ink jet printer head and method for fabricating the same including a

A method for fabricating solder bumps onto a semiconductor chip. A solder ball forming member having a flat surface and a plurality of cavities arranged on the flat surface in a predetermined pattern is prepared. The cavities are then filled with a solder paste, and the solder ball forming member is heated to a temperature higher than the melting point of the solder so that the molten solder powder in the solder paste form solder balls due to surface tension. The semiconductor chip is then moved toward the solder ball forming member to transfer the heated solder balls from the solder ball forming member to the semiconductor chip.

Method for fabricating solder bumps by forming solder balls with a

A piezoelectric device including an insulating substrate and a displacement layer formed on the insulating substrate including a first common electrode, a piezoelectric layer and a plurality of second electrodes laid on the insulating substrate in the stated order, where a part of a surface of the piezoelectric device in a region where the first and the second electrodes overlap each other is projected out of the rest part of the surface. The thus-formed piezoelectric device can increase the amount of displacement of the displacement layer.

Piezoelectric device and method for fabricating the same, and ink jet

A piezoelectric fluid pump includes a stationary pump base and a plurality of piezoelectric elements arranged in parallel on the stationary pump base, each of the piezoelectric elements having, in a polarizing direction thereof or in a direction perpendicular to the polarizing direction, a first end fixed to the stationary pump base and a free, second end. The free, second ends of respective pairs of adjacent the piezoelectric elements are connected to each other, for respective units of the fluid pump. Between the pair of piezoelectric elements and between the stationary pump base and the connecting means, pressure chambers are defined. There are gaps are between walls of the piezoelectric elements and walls of piezoelectric elements of adjacent units.

Piezoelectric fluid pump

A process of producing a multiple-layer circuit board of aluminum nitride, including the steps of: preparing green sheets of aluminum nitride, forming on the green sheets conductor patterns of a conductor paste containing tungsten as a main conductor component, laminating the green sheets with the conductor patterns formed thereon to form a lamination, and firing the lamination in a container made of boron nitride and in a pressurized nitrogen gas atmosphere.

Process of producing aluminum nitride multiple-layer circuit board

An epoxy resin composition contains an epoxy resin as a substratal resin and incorporates therein a polyallylphenol curing agent. The composition may also contain a polyphenol compound. The epoxy resin may have a naphthalene skeleton. The epoxy resin composition may also include a blend of two or more epoxy resins.

Epoxy resin composition

A method for fabricating a semiconductor device using a solder ball forming plate having cavities. The plate is made from a silicon plate having a flat surface in a &lt;110&gt; crystallographic plane, and an orientation flat in a &lt;1-11&gt; crystallographic plane. The cavities are formed on the flat surface of the plate by etching, using a mask having openings in the shape of rhombus arranged such that one side of the rhombus is generally parallel to the &lt;1-11&gt; crystallographic plane. As a result, the cavities having wedge-shaped bottom are formed. The cavities are then filled with a solder paste and are heated to form solder balls in the cavities while the plate in an inclined position. The solder balls are then transferred from the plate to a semiconductor chip.

Process for forming solder balls on a plate having apertures using

Disclosed is a process for forming a super-conducting film, which a multi-layer metal film (buffer film) is formed at a specific temperature on a ceramic substrate and a superconducting film is formed at a specific temperature on the multi-layer metal film. According to this process, a superconducting film having a high critical temperature can be formed over the ceramic substrate while controlling or suppressing the occurrence of a chemical reaction between the substrate and the superconducting film, and required superconducting performances can be manifested or exhibited.

Process for forming oxide superconducting films with a plurality of

A process for producing a multi-layer wiring board having alternate layers of a glass ceramic material and conductor patterns. The glass ceramic layers are made up of a glass ceramic material including a glass matrix and ceramic particles dispersed in the matrix. The glass ceramic layers are caused to contain hollow or porous silica glass spheres dispersed in the glass ceramic material. The hollow or porous silica glass spheres are covered with a ceramic coating layer containing alumina as a constituent element. Such a structure prevents crystallization of the silica spheres and avoids the resultant rapid increase in the the thermal expansion coefficient of the glass ceramic layers. The structure provided by the process of the invention also precudes the formation of pores in the surfaces of the glass ceramic layers.

Process for preparing a multi-layer wiring board

A perovskite type superconductor film having a high content, almost a single phase, of the high Tc phase is formed by the steps of: depositing at least one first film of a first material (e.g., a composite oxide of Bi-Sr-Ca-Cu-O system or Tl-Ba-Ca-Cu-O system) constituting a perovskite type superconductor over a substrate; depositing at least one second film of a second material containing an oxide or element (Bi.sub.2 O.sub.3, Tl.sub.2 O.sub.3, PbO.sub.x, etc., particularly PbO.sub.x) having a vapor pressure of more than 10.sup.-4 Pa at 800.degree. C. at least as a main component over the substrate; to thereby form a stack of the first and second films; and heat treating the stack of the first and second films to form the perovskite type superconductor film on the substrate. Further, preferred compositions of the as-deposited films or stack are determined.

Process for preparing a perovskite Bi-containing superconductor film

A process for manufacturing a multi-layer glass ceramic substrate which includes the steps of forming green sheets containing ceramic powders and glass powders as main ingredients, laminating the green sheets, and firing the laminated green sheets to form a multi-layer glass ceramic substrate, wherein at least one green sheet containing porous glass powders as a part of the glass powders, is provided to control the shrinkage of the green sheets and prevent cracks or delamination. The preferred process includes the steps of forming a single layer by i) forming first green sheets containing ceramic powders, glass powders, hollow glass spheres and porous glass powders as main ingredients, ii) forming an interconnection layer on each of the first green sheets, and iii) laminating the first green sheets with the interconnection layer; sandwiching the signal layer between upper and lower green sheets containing ceramic powders and glass powders as main ingredients; and firing the sandwiched signal layer to form the multi-layer glass ceramic substrate.

Process for manufacturing multi-layer glass ceramic substrate

Composition for the formation of ceramic vias

Growing community of inventors

Kawasaki, Japan

Nobuo Kamehara