Nec Electronics Corporation

Nobuo Hironaga

Toshiyuki Takewaki

Hiroyuki Kunishima

Yoshiaki Yamamoto

Hidemitsu Aoki

Hiroaki Tomimori

Kenichi Nakabeppu

In a method of manufacturing a semiconductor device, a first wiring line composed of a copper containing metal film is formed on or above a semiconductor substrate. A first interlayer insulating film is formed on a whole surface of the semiconductor substrate to cover the first wiring line. The first interlayer insulating film is selectively removed to form a connection hole reaching the first wiring line. A barrier metal film is formed to cover an inner surface of the connection hole and then a copper containing metal film is formed to fill the connection hole. The copper containing metal film formed outside the connection hole is removed. A second interlayer insulating film is formed on a whole surface of the semiconductor substrate to cover the copper containing metal film formed in the connection hole. The second interlayer insulating film is selectively removed to form a wiring line groove such that the copper containing metal film formed in the connection hole is exposed at a bottom. A barrier metal film is formed to cover an inside of the wiring line groove and then a copper containing metal film is formed to fill the wiring line groove. Then, the copper containing metal film outside the wiring line groove is removed to form a second wiring line.

Semiconductor device and manufacturing method for the same

There are provided a semiconductor device fabricating method for forming a wiring layer on a semiconductor substrate, followed by cleaning, which may prevent elution and oxidation of the wiring layer, and a treating liquid used in the fabricating method. A Cu wiring, an interlayer film over the Cu wiring and an opening in the interlyaer film to expose the surface of the Cu wiring are formed in a plasma atmosphere. IPA is sprayed to the semiconductor device, and then, an organic release process is performed thereto with an amine solvent to remove an etching residue. The semiconductor device is rinsed with the IPA again to remove the remaining amine, and then is cleaned with a treating liquid, which is alkalescent. Then, it is rinsed with pure water or COwater and is dried.

Semiconductor device fabricating method and treating liquid

Growing community of inventors

Tokyo, Japan

Nobuo Hironaga