Showa Denko K.k.

Nobuo Eitoh

Hisayuki Miki

Noritaka Muraki

Munetaka Watanabe

A transparent electrode for a gallium nitride-based compound semiconductor light-emitting device includes a p-type semiconductor layer (), a contact metal layer () formed by ohmic contact on the p-type semiconductor layer, an current diffusion layer () formed on the contact metal layer and having a lower magnitude of resistivity on the plane of the transparent electrode than the contact metal, and a bonding pad () formed on the current diffusion layer. The transparent electrode is at an advantage in widening the surface of light emission in the p-type semiconductor layer, decreasing the operation voltage in the forward direction, and enabling the bonding pad to provide excellent adhesive strength.

Growing community of inventors

Ichihara, Japan

Nobuo Eitoh