Nippon Zeon Company, Ltd.

Fujitsu Corporation

Zeon Corporation

Nobunori Abe

Hideyuki Tanaka

Masayuki Oie

Akira Oikawa

Hiroyuki Tanaka

Tatsuya Sugimoto

Nobukazu Takahashi

Shuichi Miyata

Kakuei Ozawa

Yasumasa Wada

Shugo Matsuno

The present disclosure provides a method for efficiently producing an &#x3b1;-alkylstyrene &#x3b1;-chloroacrylate copolymer having a high monomer conversion rate. According to the present disclosure, the method for producing a copolymer containing 30 mol % to 70 mol % of an &#x3b1;-alkylstyrene unit and 30 mol % to 70 mol % of an &#x3b1;-chloroacrylate unit includes a step of performing solution polymerization of a monomer composition containing &#x3b1;-alkylstyrene and &#x3b1;-chloroacrylate, and uses ketone as a polymerization solvent for the solution polymerization.

Method for producing copolymer

The invention provides a resist composition which comprises a polymer (a) having structural units with an acid-labile group, and a radiation-sensitive compound (b) which forms an acid upon exposure to activated radiation, wherein the polymer (a) is a polymer obtained by polymerizing 10 to 100 wt. % of a (meth)acrylic ester (i) having, as an alcohol residue, an allyl group with at least two substituent groups and 0 to 90 wt. % of a monomer (ii) copolymerizable with the (meth)acrylic ester, and has excellent sensitivity, resolution and heat resistance, and a pattern forming process making use of the resist composition.

Resist composition

Disclosed herein is a resist composition comprising in admixture (a) 100 parts by weight of an alkali-soluble phenolic resin, (b) 0.2-50 parts by weight of a compound which forms an acid upon exposure to active rays and consists of a specific halogen-containing aromatic compound, (c) 0.01-50 parts by weight of a compound which crosslinks the alkali-soluble phenolic resin in the presence of the acid formed from the compound (b), and (d) sufficient solvent to dissolve the foregoing composition components.

A chemically amplified resist pattern is formed by applying chemically amplified resist, forming thereafter a layer of an amorphous polyolefines substance thereon, then exposing the chemically amplified resist, and furthermore, developing the chemically amplified resist after removing the amorphous polyolefines substance.

Method of forming chemically amplified resist pattern and manufacturing

A resist composition comprising in admixture (A) a compound which forms an acid upon exposure to active rays, (B) a polymer which has at least one structural unit with a group unstable to an acid and cleaves at this group in the presence of the acid derived from the compound (A) to turn alkali-soluble, and (C) a phenolic compound, and a process for forming a resist pattern using this resist composition are provided.

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Kanagawa, Japan

Nobunori Abe