The Furukawa Electric Co., Ltd.

Nobumitsu Yamanaka

Akihiko Kasukawa

Michio Ohkubo

Yusuke Yamada

Satoshi Arakawa

Hidemichi Fujiwara

Kazutomi Miyoshi

Takuya Harada

Hideo Nishikubo

Kazuhiro Takashiba

Takashi Unno

Noriyuki Yokouchi

Hideki Aizawa

Nariaki Ikeda

Takeharu Yamaguchi

Toshikazu Mukaihara

Masataka Nishida

Ryusuke Nakasaki

Silica particles having a thiol group on a surface thereof, and satisfying the following conditions (a) to (c):

Silica particles having reactive functional group on surface, and method of producing the same

A method of producing a labeled antibody, including the steps of:

Method of producing labeled antibody

In a fine particle dispersion, a fine particle (P) is dispersed in a mixed organic solvent. The fine particle (P) is formed of one type or not less than two types of a metal, an alloy, and/or a metallic compound, and has a mean particle diameter between 1 nm and 150 nm for primary particles thereof. Further, the fine particle (P) has a surface at least a part thereof coated with a polymer dispersing agent (D).

Fine particle dispersion and method for producing fine particle dispersion

A method for producing a fine particle dispersion includes the steps of reducing a metal ion to form a fine particle dispersion aqueous solution; adding an aggregation accelerator into the fine particle dispersion aqueous solution so that agglomerated or precipitated fine particles are separated to obtain fine particles; and re-dispersing the fine particles into an organic solvent containing an organic solvent having an amide group, a low boiling point organic solvent having a boiling point between 20&#xb0; C. and 100&#xb0; C. at a normal pressure, and an organic solvent having a boiling point higher than 100&#xb0; C. at a normal pressure and containing an alcohol and/or a polyhydric alcohol.

Method for producing fine particle dispersion and fine particle dispersion

An EA-DFB module including a DFB laser diode and an EA modulator formed on an InP first-conductivity-type substrate has a mesa stripe, a current blocking structure formed on both side surfaces of the mesa strip and a second InP cladding layer formed on top of the mesa stripe and the current blocking structure. The current blocking structure includes a Fe-doped semi-insulating film, a first conductivity-type buried layer and a carrier-depleted layer. The carrier-depleted layer reduces the parasitic capacitance at the boundary between the first-conductivity-type buried layer and the second InP cladding layer.

Optical device having a carrier-depleted layer

Disclosed is a process of producing a semiconductor layer structure which emits lights with a plurality of luminescence wavelengths from the same quantum well structure. The layer structure has a layer structure which has the quantum well structure located between a lower light-confinement layer and an upper light-confinement layer. At least a part of the quantum well structure is an area which has a shorter luminescence wavelength than those of the other portions. This area is produced by stacking a lower cladding layer, the lower light-confinement layer, the quantum well structure, the upper light-confinement layer and a first semiconductor layer having a first conductivity type on a semiconductor substrate by epitaxial growth and further stacking a second semiconductor layer having the opposite conductivity type to that of the first semiconductor layer on the entire surface or a partial surface of the first semiconductor layer. This second semiconductor layer may be removed after the formation.

Process of producing semiconductor layer structure

A semiconductor laser has a multiple-quantum well (MQW) structure overlying a first III-V compound semiconductor. The MQW includes a plurality of layer combinations including a strained well layer and a strained barrier layer, which are formed in a cyclic order. An ultra-thin intermediate film made of the first III-V compound semiconductor and having a thickness corresponding to from monoatomic layer to ten atomic layer is interposed between each strained well layer and each strained barrier layer. The intermediate film functions for preventing formation of mixed crystal formed between the well layer and the barrier layer, thereby improving current density threshold and other characteristics of the semiconductor laser.

Semiconductor optical device having a strained quantum well structure

The present invention gives rise to a 1.3 .mu.m tensile-strained quantum well laser having a quantum well active layer which can be structurally specified as In.sub.1-x Ga.sub.x As.sub.y P.sub.1-y with X between 0.42 and 0.55 and Y between 0.8 and 0.75. The InGaAsP active layer needs to have a tensile stress between 1.0 and 1.5% and can be fabricated without any substantial phase-separation between InP and GaAs. The 1.3 .mu.m tensile-strained quantum well laser is equipped with a remarkably meager threshold current density of less than 0.2 kA/cm.sup.2. The preferable tensile strain ranges between from 1.2 to 1.4% or thereabout.

Growing community of inventors

Tokyo, Japan

Nobumitsu Yamanaka