Kabushiki Kaisha Toshiba

Honda Giken Kogyo Kabushiki Kaisha

Toshiba Energy Systems & Solutions Corporation

Nobumitsu Tada

Hiroki Sekiya

Toshiharu Obu

Shimpei Yoshioka

Keizo Hagiwara

Hitoshi Matsumura

Hiroaki Ito

Toshiharu Ohbu

Yosuke Nakazawa

Mami Mizutani

Ryuta Hasegawa

Iwao Shimane

Ryuichi Morikawa

Atsushi Amano

Takafumi Nakahama

Naotake Watanabe

Masayuki Nogi

Kazuya Kodani

Yuusuke Kouno

Tomoyuki Makino

Masami Hirata

Daisuke Hiratsuka

Yuuji Hisazato

Norihito Togashi

Tadashi Shudo

Taihei Koyama

Kenya Kurokawa

Naotaka Iio

Kazuyasu Takimoto

Yuta Ichikura

Shigekazu Saito

Gou Ninomiya

Masami Nakamura

Yasuyuki Danjou

Takeo Kakuchi

Naoki Yamanari

Yuuki Tsukinari

According to an embodiment, a semiconductor device includes a first metal plate, a second metal plate, and two or more semiconductor units. The two or more semiconductor units are disposed on the first metal plate. The each of the two or more semiconductor units includes a first metal member, a second metal member, and a semiconductor element. The first metal member has a first connection surface connected to the first major surface. The second metal member has a second connection surface connected to the second major surface. The semiconductor element includes an active region having surfaces respectively opposing the first connection surface and the second connection surface. A surface area of the first connection surface is greater than a surface area of the surface of the active region opposing the first connection surface. A surface area of the second connection surface is greater than a surface area of the surface of the active region opposing the second connection surface.

Semiconductor device

A vehicle power conversion device includes a two-level converter, a three-level converter and one cooling device. The two-level converter includes a capacitor, first switching devices and second switching devices. The three-level converter includes two capacitors, third switching devices, fourth switching devices and a bidirectional switch. The first and second switching devices are embedded in first power modules, and the third and fourth switching devices are embedded in second power modules. The second power modules have dielectric strength voltages at least equal to a voltage applicable to any one of the two capacitors connected in series included in the three-level converter, and the first power modules have dielectric strength voltages at least equal to a sum of a voltage applicable to any one of the two capacitors connected in series included in the three-level converter and a voltage applicable to the capacitor included in the two-level converter.

Vehicle power conversion device

A semiconductor device includes a base plate, a semiconductor chip, and a first to a fourth terminal plates. The first terminal plate includes a first main body unit. The second terminal plate includes a second main body unit. The second main body unit opposes the first main body unit. The third terminal plate includes a third main body unit. The third main body unit opposes the first main body unit and the second main body unit. The fourth terminal plate includes a fourth main body unit. The fourth main body unit opposes the third main body unit. A thickness of the third main body unit is thinner than a thickness of the first main body unit. A thickness of the fourth main body unit is thinner than a thickness of the second main body unit.

A gas exhaust structure of a battery includes a rupture valve formed in a battery body, and a pipe unit composed by integrating a coupling pipe and an exhaust pipe with each other. A one-side opening of the coupling pipe is coupled to the rupture valve. The exhaust pipe is coupled to an other-side opening of the coupling pipe, guides gas that spouts out from an inside of the battery body through the rupture valve and the one-side opening of the coupling pipe, and exhausts the gas to an outside. The exhaust pipe is arranged to be offset with respect to the rupture valve without allowing an extended line that passes through a center of the rupture valve and a centerline of the exhaust pipe to be perpendicular to each other.

Gas exhaust structure of battery

According to one embodiment, a temperature detection circuit is provided which requires only a small number of additional components, thus minimizing an increase in costs and which offers an insulating property and high responsiveness. A temperature detection circuit outputs a first PWM signal corresponding to a temperature of a first temperature sensor from a photointerrupter as a signal insulated from the first temperature sensor. A temperature detection circuit outputs a second PWM signal corresponding to a temperature of a second temperature sensor from a photointerrupter as a signal insulated from the second temperature sensor. A controlling arithmetic apparatus calculates a higher one of the temperatures detected by the first and second temperature sensors based on the PWM signals output from the photointerrupter.

Temperature detection circuit

To provide an inverter unit with excellent manufacturing performance and with current carrying capacity increased and size reduced by further increasing the cooling efficiency of a power efficiency device. The inverter unit includes: a semiconductor chip constituting an arm of an inverter; a first conductorjoined to a positive side of the semiconductor chip; and a second conductorjoined to a negative side of the semiconductor chip. The first and second conductors are disposed above a coolercooling the semiconductor chip so that a joint surface of the first conductorwhich is joined to a positive electrode of the semiconductor chip and a joint surface of the second conductorwhich is joined to a negative electrode of the semiconductor chip are not in parallel to a surface of the cooler

Inverter unit

By providing a plurality of semiconductor chips that are connected in parallel and constitute one arm of an inverter; a first conductor to which a face on one side of said plurality of semiconductor chips is connected; a wide conductor to which a face on the other side of said plurality of semiconductor chips is connected; a second conductor said first conductor and second conductor are connected connected to said wide conductor; and a cooler to which through an insulating resin sheet, part of the heat loss generated in the semiconductor chips is thermally conducted to the first conductor and is thence thermally conducted to the cooler, producing cooling, while another part thereof is thermally conducted to the wide conductor and thence to the second conductor, whence it is thermally conducted to the cooler, producing cooling.

Method of manufacturing an inverter device

By providing a plurality of semiconductor chips that are connected in parallel and constitute one arm of an inverter; a first conductor to which a face on one side of said plurality of semiconductor chips is connected; a wide conductor to which a face on the other side of said plurality of semiconductor chips is connected; a second conductor connected to said wide conductor; and a cooler to which said first conductor and second conductor are connected through an insulating resin sheet, part of the heat loss generated in the semiconductor chips is thermally conducted to the first conductor and is thence thermally conducted to the cooler, producing cooling, while another part thereof is thermally conducted to the wide conductor and thence to the second conductor, whence it is thermally conducted to the cooler, producing cooling.

Inverter device and method of manufacturing the device thereof, and electric automobile incorporating the inverter device thereof

In an inverter apparatus in which a three-phase inverter main circuit having a plurality of arms comprises a plurality of semiconductor chips for electric power, one arm of the three-phase inverter main circuit includes IGBTs and diodes of semiconductor chips having a size of 10 mm by 10 mm or less with the semiconductor chips connected in parallel, while the IGBTs and the diodes are bonded to a conductor having a thickness of 1.5 mm or more and 5 mm or less, and the conductor is glued to a cooler through an insulating resin sheet containing ceramics.

Inverter apparatus and method of manufacturing the same

Growing community of inventors

Hachioji, Japan

Nobumitsu Tada