Shin-Etsu Quartz Products Co., Ltd.

Heraeus Quarzglas Gmbh & Co Kg

Other

Nobumasa Yoshida

Tatsuhiro Sato

Akira Fujinoki

Kyoichi Inaki

Mamoru Endo

Tohru Segawa

Tohru Yokota

Tomoyuki Shirai

Akira Sato

Toshiyuki Kato

Atsushi Shimada

Yuya Yokosawa

Tatsuya Mori

Makoto Tanaka

Katsuhide Orikasa

Takahiro Kaitou

A quartz glass plate has a quartz glass plate body and a quartz glass member adhered to the quartz glass plate body through an adhesive layer, where the adhesive layer contains silica, and a sum of concentrations of Li, Na, and K ions, being alkali metal ions and Ca ions, being alkaline earth metal ions contained in the adhesive layer is 10 ppm by mass or less. Consequently, a step with a uniform thickness can be formed, and a quartz glass plate is not easily damaged by irradiation with a light containing an ultraviolet ray.

Quartz glass plate

Provided is a method for producing a synthetic opaque quartz glass where flame processing can be performed in high purity with a simple way and even a large sized one can be produced, and the synthetic opaque quartz glass. A method for producing a synthetic opaque quartz glass which comprises the step of heating and burning a quartz glass porous body under a pressure of from 0.15 MPa to 1000 MPa at a temperature of from 1200 &#xb0; C. The quartz glass porous body is prepared by depositing quartz glass particles which are produced by hydrolyzing a silicon compound with an oxyhydrogen flame.

Synthetic opaque quartz glass and method for producing the same

First of all, there is provided a production process of a synthetic quartz glass which has less impurity, has a high-temperature viscosity characteristic equal to or more than that of a natural quartz glass, and hardly deforms even in a high-temperature environment, and especially a production process of a highly heat resistant synthetic quartz glass which is free from the generation of bubbles and is dense. Secondly, there is provided a highly heat resistant synthetic quartz glass body which is easily obtained by the production process of the present invention, and especially a transparent or black quartz glass body which is free from the generation of bubbles, is dense, has high infrared absorption rate and emission rate, and has an extremely high effect for preventing diffusion of alkali metal. The process is a process of producing a highly heat resistant quartz glass body having an absorption coefficient at 245 nm of 0.05 cmor more, and the silica porous body was subjected to a reduction treatment, followed by baking, thereby forming a dense glass body.

Production process of synthetic quartz glass

An object of the present invention is to provide a quartz glass body, especially a quartz glass jig for plasma reaction in producing semiconductors having excellent resistance against plasma corrosion, particularly, excellent corrosion resistance against F-based gaseous plasma; and a method for producing the same. A body made of quartz glass containing a metallic element and having an improved resistance against plasma corrosion is provided that contains bubbles and crystalline phase at an amount expressed by projected area of less than 100 mmper 100 cm.

Quartz glass body having improved resistance against plasma corrosion, and method for production thereof

As a jig material to use under plasma reaction for producing semiconductors, the present invention provides a quartz glass having resistance against plasma corrosion, particularly corrosion resistance against fluorine-based plasma gases, and which is usable without causing anomalies to silicon wafers; the present invention furthermore provides a quartz glass jig, and a method for producing the same. A quartz glass containing 0.1 to 20 wt % in total of two or more types of metallic elements, said metallic elements comprising at least one type of metallic element selected from Group 3B of the periodic table as a first metallic element and at least one type of metallic element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, lanthanoids, and actinoids as a second metallic element, provided that the maximum concentration of each of the second metallic elements is 1.0 wt % or less.

Quartz glass having excellent resistance against plasma corrosion and method for producing the same

As a jig material to use under plasma reaction for producing semiconductors the present invention provides a quartz glass having resistance against plasma corrosion, particularly corrosion resistance against fluorine-based plasma gases, and which is usable without causing anomalies to silicon wafers; the present invention furthermore provides a quartz glass jig, and a method for producing the same. A quartz glass containing 0.1 to 20 wt % in total of two or more types of metallic elements, said metallic elements comprising at least one type of metallic element selected from Group 3B of the periodic table as a first metallic element and at least one type of metallic element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, lanthanoids, and actinoids as a second metallic element, provided that the maximum concentration of each of the second metallic elements is 1.0 wt % or less.

Opaque silica glass having a density of 2.0 to 2.18 g/cm.sup.3, sodium and potassium elements concentrations in the silica glass of each 0.5 ppm or less and an OH group concentration of 30 ppm or less, and containing bubbles which are independent bubbles having the following physical values: a bubble diameter of 300 .mu.m or less, and a bubble density of 100,000 to 1,000,000 bubbles/cm.sup.3, and a production process for opaque silica glass, including: filling quartz raw material grain having a particle size of 10 to 350 .mu.m in a heat resistant mold, heating it in a non-oxidizing atmosphere from a room temperature up to a temperature lower by 50 to 150.degree. C. than a temperature at which the above raw material grain is melted at a temperature-raising speed not exceeding 50.degree. C./minute, then, slowly heating it up to a temperature higher by 10 to 80.degree. C. than the temperature at which the quartz raw material grain is melted at the speed of 10.degree. C./minute or less, and cooling after maintaining at the above temperature.

High purity opaque silica glass

Method of producing cristobalite containing silica glass

A process for producing opaque silica glass in which a quartz raw material grain having a particle size of 10 to 350 .mu.m is filled into a heat resistant mold, the quartz raw material grain is heated in a non-oxidizing atmosphere from a room temperature up to a temperature lower by 50.degree. to 150.degree. C. than a temperature at which the above raw material grain is melted at a temperature-increase speed not exceeding 50.degree. C./minute, then, slowly heated up to a temperature higher by 10.degree. to 80.degree. C. than the temperature at which the quartz raw material grain is melted at the speed of 10.degree. C./minute or less, and the heated quartz raw material grain is further maintained at the temperature higher by 10.degree. to 80.degree. C. than the temperature at which the quartz raw material grain is melted, followed by cooling down to the room temperature. Especially, in the case of producing a large scale opaque silica glass block, a quartz raw material grain filled into a heat-resistant mold is heated by a belt-like heating source located perpendicularly to a trunk of a filling layer of the quartz raw material grain so as to form a moving heating zone in the filling layer and the heating zone is successively moved either upwardly starting at the lower end portion of the filling layer or downwardly starting at the upper end portion thereof in a non-oxidizing atomosphere.

Growing community of inventors

Fukushima, Japan

Nobumasa Yoshida