Kabushiki Kaisha Toshiba

Nobuki Ibaraki

Takashi Ishigami

Shuichi Uchikoga

Yasuhisa Oana

Kouji Suzuki

Masayuki Dohjo

Michiya Kobayashi

Kaichi Fukuda

Hideo Hirayama

Kiyotsugu Mizouchi

Makoto Kikuchi

Takuya Shimano

Koji Hidaka

Yoshitaka Kamata

The present invention provides a display device substrate includes a first wiring layer formed on a substrate made of an insulating material, a second wiring layer formed to cross the first wiring layer, and an insulating film interposed between the first and second wiring layers at a cross point portion therebetween, wherein the first wiring layer is constituted by an electrode wiring layer made of a material containing aluminum as a main component and a surface covering layer formed by causing a refractory metal to denature the electrode wiring layer. The present invention also provides a method of manufacturing a display device substrate in which an electrode wiring layer made of a material containing aluminum as a main component is formed on a substrate made of an insulating material, a thin film made of a refractory metal is formed on the electrode wiring layer, and heat treatment is performed to cause the refractory metal to denature a surface portion of the electrode wiring layer, thereby forming a surface covering layer.

Display device substrate and method of manufacturing the same

A light-shielding film, and a liquid crystal display device including the light-shielding film, and a material suitable for forming the light-shielding film. The light-shielding film includes at least a film prepared from an inorganic insulating material and fine particles of metal and/or semi-metal dispersed in the insulating material film. The liquid crystal display device includes a display pixel electrode array substrate, a counter substrate, and a liquid crystal layer interposed between the two substrates. The light-shielding film is formed on the display pixel electrode array substrate of the liquid crystal display device.

Light-shielding film, useable in an LCD, in which fine particles of a

A thin-film semiconductor element provided on a channel area with a channel protection layer, characterized by the fact that a source electrode layer and a drain electrode layer respectively have overlapping areas on the channel protection layer, the side walls of the source electrode layer and the drain electrode layer extend in the overlapping areas beyond the side wall of the channel protection layer in at least one direction of the width thereof, and the source electrode layer and the drain electrode layer possess points of overlap intersection with the semiconductor layer at the points of overlap intersection thereof with the channel protection layer. Owing to the construction described above, the leakage current generated by exposure to light can be decreased and the thin-film semiconductor element can be produced by a simple process of manufacture.

Thin-film transistor element having a structure promoting reduction of

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Kanagawa-ken, Japan

Nobuki Ibaraki