Sony Corporation

Nobukata Okano

Hironobu Narui

Tomonori Hino

Sachio Karino

Takehiro Taniguchi

Noriko Ueno

Yoshiaki Watanabe

Jugo Mitomo

Katsunori Yanashima

Tatsuo Ohashi

Tsuyoshi Nagatake

Makoto Oogane

Eiji Takase

Hisayoshi Kuramochi

Michiru Kamada

Noriyuki Futagawa

Takao Miyajima

Takaaki Ami

Shigetaka Tomiya

Akira Ohmae

Michinori Shiomi

Izuho Hatada

Yuuji Hiramatsu

Yuichiro Kikuchi

Kiyotaka Yashima

Yoshinari Kiwaki

Kamada Michiru

Hideki Watanabe

Rintaro Koda

Moe Takeo

Tomomori Hino

A semiconductor light emitting element has a laminated structure formed by laminating a first compound semiconductor layer, an active layer, and a second compound semiconductor layer. The semiconductor light emitting element satisfies &#x394;I&#x3e;&#x394;I, where &#x394;Iis an operating current range when the temperature of the active layer is T, and &#x394;Iis the operating current range when the temperature of the active layer is T(where T&#x3e;T). The semiconductor light emitting element satisfies P&#x3e;P, where Pis a maximum optical output emitted when the temperature of the active layer is T, and Pis the maximum optical output emitted when the temperature of the active layer is T(where T&#x3e;T).

Semiconductor light emitting element and semiconductor light emitting element assembly

A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.

Nitride-based III-V group compound semiconductor

Method for growing a nitride-based III-V Group compound semiconductor

The optical semiconductor apparatus includes, on an n-GaAs substrate, a surface-emitting semiconductor laser device and a photodiode integrated on the periphery of the laser device with an isolation region interposed there between. The laser device is composed of an n-DBR mirror, an active region, and a p-DBR mirror and includes a columnar layered structure with its sidewall covered with an insulating film. The photodiode is formed on the substrate and has a circular layered structure wherein an i-GaAs layer and a p-GaAs layer surrounds the laser device with an isolating region interposed between the i-GaAs and p-GaAs layers and the laser device. The diameter of the photodiode is smaller than the diameter of the optical fiber core optically coupled with the optical semiconductor apparatus. Since the laser device and the photodiode are monolithically integrated, the devices do not require optical alignment, and thus, facilitate optical coupling with an optical fiber.

Optical semiconductor apparatus having a bidirectional communication system employing a single-core optical fiber

A light-emitting device includes a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a second electrode formed on the second compound semiconductor layer; an insulating layer covering the second electrode; a first opening provided to pass through the insulating layer, the second electrode, the second compound semiconductor layer, and the active layer; a second opening provided to pass through the insulating layer; a first electrode formed on an exposed portion of the first compound semiconductor layer at the bottom of the first opening; a first electrode extension extending from the first electrode to the insulating layer through the first opening and a first pad portion including a portion of the first electrode extension on the insulating layer; and a second pad portion connected to an exposed portion of the second electrode at the bottom of the second opening.

Light-emitting device

A convex part formation method of forming a convex part in parallel with a &#x3c;110&#x3e; direction of a backing on the backing having a {100} face as the top surface thereof, includes: (a) forming a mask layer in parallel with the &#x3c;110&#x3e; direction on the backing; (b) etch the backing so as to form a convex-part upper layer whose sectional shape on a cutting plane corresponding to a {110} face is an isosceles trapezoid, the base of which is longer than the upper side thereof, and the side surface of which has an inclination of &#x3b8;; and (c) further etching the backing so as to form a convex-part lower layer whose sectional shape on the cutting plane corresponding to the {110} face is an isosceles trapezoid, the base of which is longer than the upper side thereof, and the side surface of which has an inclination of &#x3b8;(where &#x3b8;&#x2260;&#x3b8;).

Semiconductor light-emitting element, fabrication method thereof, convex part formed on backing, and convex part formation method for backing

A semiconductor light-emitting device configured to decrease a leakage current in a current-blocking layer and including a light-emitting portion composed of a first compound semiconductor layer having a first conductivity type, an active layer, and a second layer having a second conductivity type, and a current-blocking layer in contact with the side of the light-emitting portion and composed of a third layer having the first conductivity type and a fourth layer having the second conductivity type.

Semiconductor light-emitting device

An optical-information transmitting, lighting apparatusis installed in a place where a lighting apparatus of the existing type for applying light generally used is provided. The lighting apparatuscomprises an illumination light sourcefor applying light and an information-transmitting unitfor transmitting optical information. A person who may receive information from the lighting apparatushas a mobile terminal, which receives the optical information transmitted from the information-transmitting unit. Since the lighting apparatus of the existing type is widely used in our living space. Hence, the optical-information transmitting, lighting apparatuscan convert every place where an existing type lighting apparatus is used, into an optical communications space.

Communications system and communications lighting apparatus

A method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer.

Light emitting device and method of manufacturing the same

Disclosed herein is a semiconductor light emitting device including: (A) an underlying layer configured to be formed on a major surface of a substrate having a {100} plane as the major surface; (B) a light emitting part; and (C) a current block layer, wherein the underlying layer is composed of a III-V compound semiconductor and is formed on the major surface of the substrate by epitaxial growth, the underlying layer extends in parallel to a &#x3c;110&#x3e; direction of the substrate, a sectional shape of the underlying layer obtained when the underlying layer is cut along a virtual plane perpendicular to the &#x3c;110&#x3e; direction of the substrate is a trapezoid, and oblique surfaces of the underlying layer corresponding to two oblique sides of the trapezoid are {111}B planes, and the top surface of the underlying layer corresponding to an upper side of the trapezoid is a {100} plane.

Semiconductor light emitting device, method for manufacturing same, and method for forming underlying layer

Disclosed herein is a semiconductor light emitting device including: a light emitting part formed of a multilayer structure arising from sequential stacking of a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a current block layer; and a burying layer, wherein a planar shape of the active layer is a strip shape in which a width of a center part is smaller than a width of both end parts, the current block layer is composed of third and fourth compound semiconductor layers, the burying layer is formed of a multilayer structure arising from sequential stacking of a first burying layer and a second burying layer, and an impurity for causing the second burying layer is such that a substitution site of the impurity in the second burying layer does not compete with a substitution site of an impurity in the third compound semiconductor layer.

Semiconductor light emitting device

Herein disclosed a method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer.

Optical semiconductor apparatus

Growing community of inventors

Kanagawa, Japan

Nobukata Okano