Mitsubishi Denki Kabushiki Kaisha

Nobuhisa Honda

Kiyoshi Arai

Hideo Matsumoto

Toshiyuki Furuie

A power semiconductor device includes a portion and an external package enclosing the portion. The portion includes a ceramic board sides provided on the ceramic board defining a space filled with a thermal insulator, and a silicon carbide power semiconductor element enclosed within the thermal insulator. The external package is made of a material having a thermal conductivity lower than that of the side.

Power semiconductor device

When a driving unit ( ) charges gate input capacitance ( ) of an IGBT ( ), the gate input capacitance ( ) accumulates electric charges which are accumulated therein when the driving unit ( ) discharges the gate input capacitance ( ). Therefore, it is possible to reduce the amount of electric charges to be supplied to the gate input capacitance ( ) by the driving unit ( ) until the charge of the gate input capacitance ( ) is completed. As a result, it is possible to reduce the required power capacity of a control power supply ( ). Further, since the electric charges accumulated in the gate input capacitance ( ) are effectively used, it is possible to ensure power savings of a semiconductor device. Thus provided are a semiconductor device and a method of driving a transistor, in which electric charges accumulated in gate input capacitance of an insulated gate transistor are effectively utilized, to reduce required power capacity of a power supply for driving the transistor and ensure power savings of the semiconductor device on the whole.

Semiconductor device and method of driving transistors

A wiring pattern ( ) or ( ) and conductor wires (W , W ) or (W , W ) not relaying a wiring pattern ( ) or ( ) fed with an emitter current connect emitter electrodes of a plurality of IGBTs ( ) connected in parallel with each other. Thus, oscillation appearing on the potential of a control electrode of the plurality of IGBTs ( ) is suppressed.

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Fukuoka, Japan

Nobuhisa Honda