Nichia Corporation

Nobuhiro Ubahara

Hiroaki Matsumura

Takao Yamada

Kouichiroh Deguchi

Takuya Yamanoi

A light-emitting device includes a substrate including a substrate second upper surface provided between a substrate bottom surface and a substrate first upper surface in a height direction. A light-emitting element to emit ultraviolet light is provided on the substrate first upper surface. A protective element includes a protective element upper surface provided between the substrate first upper surface and the substrate second upper surface in the height direction. A frame is bonded to the substrate first upper surface via adhesive members to surround the light-emitting element. The frame includes a frame lower surface opposite to the substrate first upper surface and the substrate second upper surface in the height direction to provide a gap between the substrate first upper surface and the frame lower surface. A space in which the light-emitting element is provided communicates with an outside of the light-emitting device via the gap.

Light-emitting device

A semiconductor light emitting device comprises a semiconductor light emitting element comprising a semiconductor laminate including a p-type semiconductor layer, an active layer and an n-type semiconductor layer which are sequentially laminated, and a conductive support substrate joined to the p-type semiconductor layer side of the semiconductor laminate. The semiconductor laminate is divided into at least two semiconductor regions by a trench. The semiconductor light emitting device further comprises a first transparent sealing resin covering at least a portion of the semiconductor light emitting element, the first transparent sealing resin comprising a plurality of first fluorescent particles, each of the first fluorescent particles having an individual average particle diameter. A width of the trench is smaller than an overall average of the individual average particle diameters of the first fluorescent particles.

Semiconductor light emitting device

Provided is a nitride semiconductor light emitting element capable of producing an emission spectrum having two peaks with stable ratio of emission peak intensity. The nitride semiconductor light emittingcomprises an active layerdisposed between an n-type nitride semiconductor layerand a p-type nitride semiconductor layer. The active layercomprises a first well layer, second well layersinterposing the first well layerand disposed at outermost sides among the well layers, and barrier layersdisposed between each of the well layers. The second well layercomprises a nitride semiconductor having a larger band gap energy than the band gap energy of a nitride semiconductor constituting the first well layer, and the nitride semiconductor light emitting elementhas peaks in the emission spectrum respectively corresponding to the first well layerand the second well layer

Growing community of inventors

Tokushima, Japan

Nobuhiro Ubahara