Tokyo Electron Limited

Tokyo Electron Limi Ted

Nobuhiro Takahashi

Yasuo Asada

Junichiro Matsunaga

Takehiko Orii

Ayano Hagiwara

Tatsuya Yamaguchi

Koji Takeya

Shinji Irie

Masashi Matsumoto

Kazuhito Miyata

Mitsuhiro Okada

Akitaka Shimizu

Akinobu Kakimoto

Shuji Moriya

Teruyuki Hayashi

Katsuhiko Komori

Keiji Tanouchi

Kazuaki Nishimura

Junnosuke Taguchi

Shoi Suzuki

Tetsuro Takahashi

Keiko Hada

Yuji Asakawa

Katsuhiko Anbai

Masayuki Oikawa

Ken Nakagomi

Toshiki Kanaki

Shunta Furutani

Kiyotaka Horikawa

Megumi Umemoto

An etching method includes a step of preparing a substrate having a portion to be etched, a step of plasma-etching the portion to be etched of the substrate into a predetermined pattern using plasma of a processing gas containing a CF-based gas, and then a step of removing a CF-based deposit which remains as an etching residue. The step of removing the CF-based deposit includes a step of forming an oxide including an oxide of the CF-based deposit using oxygen-containing radicals, and a step of removing the generated oxide by radical processing or chemical processing using gas.

Etching method, method of removing etching residue, and storage medium

A substrate processing apparatus includes a vacuum chamber, a rotary table that is rotatably provided inside the vacuum chamber, a stage that is rotatable with respect to the rotary table, the stage having a center of rotation at a position spaced apart from a center of rotation of the rotary table, and the stage having a flange provided at a lower surface of the stage, a first holder and a second holder, the flange being sandwiched between the first holder and the second holder, and a pressing member configured to press the second holder in a direction in which the second holder comes closer to the first holder.

Substrate processing apparatus

An etching method includes: accommodating a substrate having a recess formed by a sidewall, which is a germanium-containing film, into a processing container; etching the sidewall by supplying an etching gas including a first fluorine-containing gas and a second fluorine-containing gas into the processing container; and controlling a shape of the sidewall after etching by, in the etching the sidewall, adjusting a partial pressure of the first fluorine-containing gas in the processing container, or a ratio of a flow rate of the second fluorine-containing gas to a flow rate of the first fluorine-containing gas supplied into the processing container.

Etching method and etching apparatus

An etching method includes: forming a protective film by supplying a protective film forming gas including at least one of a compound including a hydroxyl group and water to a substrate including a surface on which a first film and a second film are formed, each of which has a property of being etched by an etching gas, wherein the protective film covers the first film such that the first film is selectively protected from among the first film and the second film when the etching gas is supplied; and selectively etching the second film by supplying the etching gas to the substrate in a state in which the protective film is formed.

A substrate processing method is provided. The method comprises a first step of supplying a processing gas containing a halogen-containing gas and a basic gas to a substrate, which a silicon film is formed on and has a first temperature, and generating a reaction product by deforming a surface of the silicon film; and a second step of removing the reaction product by setting the substrate to a second temperature after the first step.

Substrate processing method and substrate processing apparatus

An etching method for performing side-etching of silicon germanium layers of a substrate having alternating silicon layers and the silicon germanium layers formed thereon is provided. The method includes modifying surfaces of residuals by supplying a plasmarized gas containing hydrogen to the residuals on exposed end surfaces of the silicon germanium layers, and performing side-etching on the silicon germanium layers by supplying a fluorine-containing gas to the silicon germanium layers.

Etching method and substrate processing system

A technique of etching Si on a substrate having Si and another material with a high selectivity using a simple gas system is provided. In an etching method, the substrate having the Si and another material is provided, and the Si is selectively etched over the above-described another material by supplying a germanium-containing gas as an etching gas to the substrate.

Etching method and apparatus

An etching method is provided. In the etching method, a protective film-forming gas including an amine gas is supplied to a substrate having a surface on which a first film and a second film are formed, the first film and the second film having respective properties of being etched by an etching gas, and a protective film is formed to cover the first film such that the first film is selectively protected between the first film and the second film when the etching gas is supplied. Further, the second film is selectively etched by supplying the etching gas to the substrate after the protective film is formed.

A substrate etching apparatus for etching a substrate, the substrate etching apparatus includes a treatment container configured to accommodate a substrate, a stage on which the substrate is placed, the stage being disposed in the treatment container, a gas supply configured to supply a treatment gas from an upper space above the stage toward the stage, and a gas exhauster configured to evacuate an interior of the treatment container. The gas supply includes a central region facing a central part of the stage and an outer peripheral region having a same central axis as the central region and configured to surround the central region. The gas supply is capable of supplying the treatment gas to each of the central region and the outer peripheral region.

Apparatus and method for etching substrate

An etching method for etching a silicon-containing film formed in a substrate by supplying an etching gas to the substrate is provided. The method includes supplying an amine gas to the substrate, in which the silicon-containing film, a porous film, and a non-etching target film that is a film not to be etched but is etchable by the etching gas are sequentially formed adjacent to each other, so that amine is adsorbed onto walls of pores of the porous film. The method further includes supplying the etching gas for etching the silicon-containing film to the substrate in which the amine is adsorbed onto the walls of the pores of the porous film.

A technique for making etching amounts uniform in selectively etching SiGe layers formed on a wafer with respect to at least one of an Si layer, an SiOlayer, and an SiN layer is provided. In an etching process where SiGe layers in a wafer W in which the SiGe layers and Si layers are alternately stacked and exposed in a recess are removed by side etching, ClFgas and HF gas are simultaneously supplied to the wafer W. Accordingly, it is possible to make the etching rates for respective SiGe layers uniform, and it becomes possible to obtain a uniform etching amount for respective SiGe layers.

Substrate processing method and storage medium

There is provided an etching method which includes: supplying an etching gas to a workpiece including a first SiGe-based material and a second SiGe-based material having different Ge concentrations; and selectively etching the first SiGe-based material and the second SiGe-based material with respect to the other using a difference in incubation time until the first SiGe-based material and the second SiGe-based material begin to be etched by the etching gas.

Etching method

There is provided an etching method which includes: preparing a target substrate having a silicon portion, a silicon nitride film and a silicon oxide film; and selectively etching the silicon portion with respect to the silicon nitride film and the silicon oxide film by supplying a fluorine-containing gas and an inert gas which stay in an excited state to the target substrate.

Etching method and method for manufacturing DRAM capacitor

There is provided an etching method which includes: forming a blocking film configured to prevent an etching gas for etching a silicon-containing film from passing through each pore of a porous film and prevent the etching gas from being supplied to a film not to be etched, by supplying at least one film-forming gas to a substrate in which the silicon-containing film, the porous film, and the film not to be etched are sequentially formed adjacent to each other in a lateral direction; and etching the silicon-containing film by supplying the etching gas.

An etching method includes: disposing a target substrate which includes silicon and silicon-germanium in a chamber; supplying the chamber with processing gas which comprises Hgas and Ar gas in an excited state; and selectively etching the silicon with respect to the silicon-germanium by the processing gas which is in the excited state. Due to this configuration, silicon can be etched, with high selectivity, with respect to the silicon-germanium.

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Nirasaki, Japan

Nobuhiro Takahashi