Nippon Telegraph and Telephone Corporation

Sharp Kabushiki Kaisha Corporation

Nobuhiro Shimoyama

Katsuyuki Machida

Junichi Takahashi

Hideo Namatsu

Toshiaki Tsuchiya

Kazushige Minegishi

Kazuo Imai

Yasuo Takahashi

Katsumi Murase

Fusao Shimokawa

Shingo Uchiyama

Tadao Takeda

Mitsuo Usui

Kazuhiro Yaegawa

Mitsuhiro Makihara

Tomomi Sakata

Haruhiko Shigemasa

Masaaki Tanno

A MEMS device includes a mirror substrate (), an electrode substrate () arranged so as to face the mirror substrate (), a mirror () serving as a movable member rotatably supported in an opening portion of the mirror substrate () via support members, a driving electrode () arranged on an insulating film () on a surface of the electrode substrate () facing the mirror substrate () so as to face the mirror () across a gap and drive the mirror (), and a lower electrode () made of a metal or a semiconductor and formed under the insulating film () exposed to the gap so as to be in contact with the insulating film ().

MEMS device and method of manufacturing the same

When a built-in nonvolatile memory in a microcomputer is tested, a control program prestored in a boot ROM is run upon entering a test command from an external communication device; a test program is transferred from the external communication device to a built-in RAM through a communication circuit; a control of a CPU is switched to the built-in RAM after the test program has been transferred and a test is conducted on the nonvolatile memory; and a test result and a fail log are transferred to the external communication device through the communication circuit. Consequently, the built-in nonvolatile memory in the microcomputer can be checked without leaving the test program on the chip.

Microcomputer having built-in nonvolatile memory and check system thereof and IC card packing microcomputer having built-in nonvolatile memory and check system thereof

A semiconductor device includes an interlevel film constituted by a first dielectrics film containing dangling bonds and a bonded group of Si and hydrogen, and a second dielectrics film formed on the first dielectrics film.

Semiconductor device and method of farbricating the same

Method of fabricating semiconductor device with water protective film

Semiconductor device and method of fabricating the same

Growing community of inventors

Kanagawa, Japan

Nobuhiro Shimoyama