Honda Motor Co., Ltd.

Honda Giken Kogyo Kabushiki Kaisha

Nobuhiro Sakurai

Takeshi Ohsato

Yusuke Hirabayashi

Hiroshi Yokobayashi

Shigenori Yasuie

There is provided a multi-axis force sensor including first and second bridge circuit groups detecting resistances of respective first and second groups of strain resistance elements provided at respective strain producing portions. The strain producing portions are formed on two axes intersecting with respect to each other at a right angle. The first group of strain resistance elements are arranged on one axis across an action portion so as to face with respect to each other, and the second group of strain resistance elements are arranged on another axis across the action portion so as to face with respect to each other. The first bridge circuit groups respectively output a positive voltage when receiving tensile force, and the second bridge circuit groups respectively output a negative voltage when receiving tensile force.

Multi-axis force sensor and acceleration sensor

A force sensor comprises a force sensor chip, and a buffering device for dampening and applying incoming external force to the force sensor chip. The buffering device comprises an input portion to which external force is input, a sensor mount for fixing the force sensor chip to the exterior, a dampening mechanism for dampening external force, and a transmission portion for transmitting the dampened external force to the active sensing portion.

Force sensor

A force sensor with a force sensor chip, and a buffering device for dampening and applying incoming external force to the force sensor chip. The buffering device includes an input portion to which external force is input, a sensor mount for fixing the force sensor chip to the exterior, a dampening mechanism for dampening external force, and a transmission portion for transmitting the dampened external force to the active sensing portion.

Force Sensor

A force sensor chip including a semiconductor substrate having a plurality of strain resistance elements and temperature-compensating resistance elements corresponding to the resistance elements is disclosed. The structure in the periphery of parts where the strain resistance elements, which are provided to deforming parts in the action part formed on the semiconductor substrate, are disposed is the same as the structure in the periphery of parts where the temperature-compensating resistance elements in the action part are disposed.

Force sensor chip

A force sensor chip which comprises: a base member, which includes an action portion to which an external force is applied through an attenuator, a support portion supporting the action portion, and a connection portion which connects the action portion and the support portion and deflects according to the applied external force; and a plurality of strain resistance elements which are arranged in the connection portion and detect the applied external force based on a deflection of the connection portion, wherein longitudinal directions of the plurality of the strain resistance elements are oriented in an identical direction.

Chip for force sensor and force sensor

In a force sensor chip, a semiconductor substrate includes: a plurality of operating parts each including an external-force acting area section and a non-deforming section; a supporting part for supporting the operating parts, and a plurality of connecting parts for connecting the operating parts and the supporting part. Strain resistance elements are provided on deformation-generating sections of the connecting parts. The plurality of operating parts are provided, in corresponding relation to the plurality of connecting parts, between the connecting parts and the supporting part.

A force sensor chip having a multiaxial force sensing function is disclosed. The force sensor chip comprises a base member having an operating part provided with an external force application area, a supporting part for supporting the operating part, connecting parts for connecting the operating part and the supporting part, and strain resistance elements disposed in the connecting parts or within boundaries between the connecting parts and the operating part. The base member has a thin area formed with a small thickness, and the boundaries of the thin area are disposed in the supporting part and operating part.

In a force sensor chip, a base member, to which an external force is applied, includes: an operating part provided in a central portion of the base member and having an external-force acting area section; a supporting part provided, in an outer peripheral portion of the base member, for supporting the operating part; an intermediate part provided between the operating part and the supporting part; a first connecting arm section connecting the operating part and the intermediate section; a second connecting arm section connecting the intermediate part and the supporting part; and at least one strain resistance element provided on each of respective deformation-generating portions of the first and the second connecting arm sections.

A multi-axis sensor chip provided by the invention includes a semiconductor substrate having an action part having an external force action area part and non-deforming area parts, a support part supporting the action part, and connecting parts connecting the action part to the support part. The sensor chip also has strain resistance devices provided on deforming parts of the connecting parts and has temperature-compensating resistance devices provided on the non-deforming area parts. Temperature compensation is carried out exactly by means of the temperature-compensating resistance devices when an external force or a load acts on the action part, and highly accurate stress detection can be carried out.

Multi-axis force sensor chip and multi-axis force sensor using same

A barrier layer (AlAs) is formed on a source layer (n-GaAs), and a drain layer (n-GaAs) and a gate layer (p-GaAs) adjacent to the drain layer are formed on the barrier layer. If the drain layer is biased to a plus voltage with the source layer, then a tunneling current will flow by way of the barrier layer. By applying a voltage to the gate layer so that the p-n junction is biased in the reverse direction, the potential on the gate side of the channel rises and the tunneling current decreases. Also, the channel width decreases due to the spread of the depletion layer to the channel side, and consequently, the current of the drain layer decreases. Thus, based on the voltage applied to the gate layer, the drain current can be controlled.

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Wako, Japan

Nobuhiro Sakurai