Shin-etsu Handotai Co., Ltd.

Nobuhiro Ohara

Masataka Watanabe

Tatsuo Ito

Yasuhiro Ikeda

Masashi Ichikawa

Shigeyoshi Netsu

Kunio Suzuki

The present invention provides a method for manufacturing a semiconductor wafer comprising steps of obtaining information of a device manufacturing process, selecting a wafer manufacturing process corresponding thereto, and manufacturing a semiconductor wafer according to the selected wafer manufacturing process. The present invention also provides a method for receiving an order for manufacture of a semiconductor wafer comprising a step of connecting a device maker with a customer computer in a wafer maker, a step wherein the customer computer receives information of a device manufacturing process and a step of selecting a wafer manufacturing process corresponding thereto, and provides a system for receiving an order for manufacture of a semiconductor wafer comprising a client terminal in a device maker and a customer computer in a wafer maker wherein information of a device manufacturing process is inputted into the client terminal and is sent, the customer computer receives the information of the device manufacturing process, and a wafer manufacturing process corresponding thereto is selected. Thereby, there can be provided a method for manufacturing a semiconductor wafer, a method for receiving an order for manufacture of a semiconductor wafer, and a system for receiving an order wherein a wafer suitable for a device manufacturing process in a device maker is supplied.

Method for manufacturing semiconductor wafer, method for receiving order for manufacture of semiconductor wafer, and system for receiving order for manufacture of semiconductor wafer

In a method of controlling a floating zone of a semiconductor rod of the present invention shown in FIG. 1, the diameter D.sub.s at a crystallization boundary of a crystal and the axial length of the floating zone are indirectly controlled by controlling a diameter D.sub.m of a crystallizing-side melt shoulder portion and the diameter D.sub.n of a constricted melt portion, respectively. Since these diameters D.sub.m and D.sub.n are used for predicting D.sub.s and L to be obtained after a given time has passed, the response speed and stability of the control are improved as compared with the direct control of D.sub.s and L. An apparatus for controlling a floating zone of a semiconductor rod of the present invention performs the above-described method. In another method, the zone length is directly or indirectly controlled by regulating a relative moving speed of the melting-side semiconductor rod relative to the heater, and the diameter D.sub.s at the crystallization boundary of the crystal is directly or indirectly controlled by regulating the electrical power supplied to the heater.

Method of and apparatus for controlling floating zone of semiconductor

Growing community of inventors

Fukushima, Japan

Nobuhiro Ohara