Asahi Glass Company, Limited

Agc Inc.

Japan Science and Technology Agency

Tokyo Institute of Technology

Canon Kabushiki Kaisha

The Japan Steel Works, Ltd.

Agc Glass Europe

Optrex Corporation

Nobuhiro Nakamura

Hideo Hosono

Takeshi Murakami

Koichi Nakata

Naoya Wada

Satoru Watanabe

Hiroyuki Watanabe

Atsushi Okuda

Tsutomu Nishida

Yuka Ishiduka

Naomichi Miyakawa

Kenji Imakita

Kazutaka Hayashi

Kazuhiro Ito

Kazunori Noguchi

Hideya Kumomi

Shuntaro Watanabe

Yoshihiro Saito

Kenichi Kaku

Daisuke Miura

Hiroyuki Tomono

Takashi Anezaki

Masaki Nonaka

Akihiro Maruyama

Koji Takahashi

Yota Ito

Kentaro Yamawaki

Toshio Kamiya

Haruki Mori

Kazuhisa Shida

Tomohito Ishida

Naoki Sugimoto

Tomoyuki Kobayashi

Hitoshi Onoda

Haruyuki Tsuji

Hideharu Shimozawa

Nao Ishibashi

Syuji Matsumoto

Toshinari Watanabe

Yasuko Osaki

Hidefumi Odaka

Yoshitake Toda

Hiroyuki Ohkawa

Teruo Fujiwara

Yumiko Aoki

Jumpei Kuno

Kohei Makisumi

Motoshi Ono

Tatsuya Yamaai

Daniel Decroupet

Hiroshi Usui

Shuhei Iwasaki

Masamichi Tanida

Minoru Sekine

Yutaka Segawa

Kazunobu Maeshige

Yasuhiko Akao

Masaharu Shimizu

Satoshi Fujimine

Philippe Roquiny

Mamoru Isobe

Masahiro Kishi

Benoit Domercq

Satoshi Otsuji

Tetsuro Matsumoto

Takahiro Mashimo

Atsushi Fujii

Hideaki Matsuoka

Naoto Kihara

Hiroyuki Okawa

Takehiko Hiruma

Junghwan Kim

Tatsuyuki Usami

The present disclosure provides a photoelectric conversion element including a first electrode, a second electrode, a photoelectric conversion layerbetween the first electrodeand the second electrode, and a reflection layerbetween one of the first electrodeand the second electrodeand the photoelectric conversion layer. The wavelength at which the reflectance of the reflection layeris maximum in the visible region is within the range of wavelengths in which the optical absorption coefficient of the photoelectric conversion layeris ⅕ or more of the maximum optical absorption coefficient in the visible region.

Photoelectric conversion element and photoelectric conversion device including the photoelectric conversion element

A thin film of metal oxide includes zinc (Zn); tin (Sn); silicon (Si); and oxygen (O). In terms of oxide, based on 100 mol % of total of oxides of the thin film, SnOis greater than 15 mol % but less than or equal to 95 mol %.

Thin film of metal oxide, organic electroluminescent device including thin film, photovoltaic cell including thin film, and manufacturing method of thin film

An oxide semiconductor compound includes gallium; and oxygen. An optical band gap is 3.4 eV or more. An electron Hall mobility obtained by performing a Hall measurement at a temperature of 300 K is 3 cm/Vs or more.

Oxide semiconductor compound, semiconductor element provided with layer of oxide semiconductor compound, and laminated body

A translucent substrate includes a glass substrate containing at least one element selected from a group consisting of Bi, Ti and Sn; a coating layer formed on the glass substrate; and a transparent conductive film formed on the coating layer, wherein the coating layer is deposited by a dry depositing method.

Translucent substrate, organic LED element and method of manufacturing translucent substrate

A light-emitting device includes a pair of first electrodes arranged separated from and opposing each other on a first surface of a substrate; a light-emitting layer arranged on at least one of the first electrodes; a second electrode arranged on the light-emitting layer; and a bridge layer connecting the first electrodes. The bridge layer is formed of a material having a resistance that falls within a range of 100 k&#x3a9; to 100 M&#x3a9;.

Light-emitting device, display apparatus and lighting apparatus

A light-emitting device having a light-extraction structure includes: a first electrode; a second electrode; a light-emitting layer disposed between the first electrode and the second electrode; and an inorganic-material-based layer disposed between the first electrode and the light-emitting layer or between the second electrode and the light-emitting layer. The inorganic-material-based layer has thickness of 100 nm or more and has conductivity of 10&#x3a9;cmor more and 100 &#x3a9;cmor less.

Light-emitting device and power-generating device

The present invention provides an organic LED element having the significantly larger light emission area than conventional ones. The invention relates to an organic LED element, comprising: a transparent substrate; a light scattering layer; a transparent first electrode; an organic light-emitting layer; and a second electrode formed in this order, wherein the light scattering layer has a base material comprising a glass, and a plurality of scattering materials dispersed in the base material; the light scattering layer has side surfaces, and each of the side surfaces has a surface tilted at an angle larger than right angle from an upper surface on the first electrode side toward a bottom surface on the transparent substrate side; and the first electrode is placed so as to continuously cover the side surfaces.

Organic LED element, translucent substrate, and method for manufacturing organic LED element

A translucent conductive substrate () for Organic Light Emitting Device comprising, a transparent support (), a scattering layer () formed over the transparent support () and comprising a glass which contains a base material () having a first refractive index for at least one wavelength of light to be transmitted and a plurality of scattering materials () dispersed in the base material () and having a second refractive index different from that of the base material and a transparent electrode () formed over the scattering layer (), said electrode () comprising at least one metal conduction layer () and at least one coating () having properties for improving the light transmission through said electrode, said coating () comprises at least one layer for improving light transmission () and is located between the metal conduction layer () and the scattering layer (), on which said electrode () is deposited.

Translucent conductive substrate for organic light emitting devices

A laminated substrate for an organic LED element includes a translucent substrate, a scattering layer including glass and a solid scattering material provided on the translucent substrate and having a thickness of 30 &#x3bc;m or less, and an electrode provided on the scattering layer, and no covering layer including glass is provided between the scattering layer and the electrode.

Laminated substrate for organic LED element, and organic LED element

Provided is an electronic device having a long life and a large effective area. Furthermore, provided is an optical device capable of controlling specular visibility. And provided is a substrate for the optical device, which includes a scattering layer having excellent scattering properties and having a desired refractive index while retaining surface smoothness. Further, there is provided a substrate for the electronic device, which includes a substrate having first and second main surfaces facing each other and an electrode pattern formed on the first main surface of the substrate, in which the first main surface of the first and second main surfaces is a surface which forms waviness made up of curved faces, the waviness of the surface has a wavelength R&#x3bb;a of greater than 50 &#x3bc;m and a ratio Ra/R&#x3bb;a of waviness roughness Ra of the surface which forms waviness to the wavelength R&#x3bb;a of the waviness is from 1.0&#xd7;10to 3.0&#xd7;10.

Substrate with wavy surface to control specular visibility for electronic device and electronic device using same

The present invention relates to a glass for a scattering layer of an organic LED element, which contains, in terms of mol % on the basis of oxides, 0&#x2dc;20% of PO, 15&#x2dc;60% of BO, 15&#x2dc;28% of BiOand 20&#x2dc;50% of ZnO, in which a value obtained by dividing the content of POby the content of ZnO is less than 0.48, the sum of the contents of POand BOis 30&#x2dc;60%, the content of POis 10% or less when the sum of the contents of POand BOexceeds 50%, and the glass does not substantially contain lead (PbO or PbO), LiO, NaO and KO, except for those contained as impurities.

Glass for diffusion layer in organic LED element, and organic LED element utilizing same

A substrate includes an auxiliary wiring pattern formed on a first main surface of a glass substrate in a grid-like pattern arranged horizontally and vertically, and a translucent glass layer formed on a surface of the glass substrate to cover the first main surface and the auxiliary wiring pattern. Through-holes exposing the auxiliary wiring pattern are formed in a portion of the translucent glass layer formed on the auxiliary wiring pattern, in each side of each grid of the grid-like pattern at uniform intervals. The substrate may be used in an electronic device having a long-life and a high reliability in which exfoliation or deterioration of a wiring is inhibited by embedding the wiring therein while maintaining smoothness of the surface.

Substrate with through-holes for grid-like auxiliary wiring pattern

The present invention relates to an organic LED element sequentially including: a transparent substrate; a scattering layer; a first electrode; an organic layer; and a second electrode, in which the scattering layer includes a first glass material and a second glass material dispersed in the first glass material and having a different refractive index from the first glass material.

Organic LED element, glass frit for diffusion layer for use in organic LED element, and method for production of diffusion layer for use in organic LED element

A light emitting diode element having a light emitting diode; and a glass covering sealing the light emitting diode is provided. The glass of the covering consists essentially of from 30 to 70 mol% of SnO, from 15 to 50 mol% of PO, from 0.1 to 20 mol% of ZnO, from 0 to 10 mol% of SiO+GeO, from 0 to 30% of LiO+NaO+KO, and from 0 to 20% of MgO+CaO+SrO+BaO. In an embodiment, a refractive index of the glass of the covering is at least 1.6 at a wavelength of 400nm.

Light emitting diode element

Growing community of inventors

Tokyo, Japan

Nobuhiro Nakamura