Seiko Epson Corporation

Nobuhiro Kanaya

Takuya Fujita

Shinichi Kamoshida

A textile printing apparatus includes a liquid remaining amount grasping unit which grasps remaining amounts of respective two or more kinds of liquids, and a control unit which performs control of execution of printings onto a plurality of printed textile materials, the control unit has a control mode for, in advance of starting the execution of printings, specifying any print-executable printing specification from among the printing specifications on the basis of the remaining amounts of the respective liquids and the contents of the respective printing specifications, and then, starting execution of any printing based on the any print-executable printing specification having been specified.

Textile printing apparatus and textile printing method

A pretreatment method for a printing material is performed prior to ink jet textile printing on the printing material and includes the steps of imparting a tension force to at least a printing area of the printing material on which ink jet textile printing is performed so as to put the printing area in a tensioned state, and applying a pretreatment agent having an ink permeation inhibiting property on the printing area in the tensioned state.

Pretreatment method for printing material, pretreatment device, ink jet textile printing apparatus and ink jet textile printing method

A mask for manufacturing a semiconductor device in accordance with the present invention is equipped with a first mask having separated patterns and a second mask having dense patterns, wherein the first mask and the second mask are exposed under respectively independent illumination conditions to transfer one set of exposure patterns. The first mask includes only isolated patterns wherein adjacent ones thereof do not overlap one another when design data for the exposure patterns is enlarged at a specified magnification, and the second mask includes only dense patterns wherein adjacent ones thereof overlap one another when the design data for the exposure patterns is enlarged at a specified magnification.

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Matsumoto, Japan

Nobuhiro Kanaya