Matsushita Electric Industrial Co., Ltd.

Matsushita Electronics Corporation

Nobuhiro Jiwari

Shinichi Imai

Hideo Nikoh

Satoshi Nakagawa

Shoji Matsumoto

Tetsuya Matsutani

Yoji Bito

Hideaki Okamura

Yoko Tohmori

The present invention provides a manufacturing method for an electronic device that enables high-yield manufacturing of electronic devices, by detecting potential short circuits between a contact plug and a conductive part contacting the periphery of the contact plug, directly after forming the contact plug; and the electronic device. The manufacturing method includes a hole-forming step of forming a contact hole in an insulating film that covers a conductive part formed on a first main surface of a substrate and an area surrounding the conductive part, the hole being formed beside the conductive part, and the conductive part including a first material; a material-supplying step of supplying a second material to the contact hole, the second material having a reactive property with the first material; and an inspection step, after the second material has been supplied, of inspecting for evidence of a reaction by the conductive part with the second material.

Manufacturing method for an electronic device, and the electronic device

The etching method of the present invention for forming a hole having a high aspect ratio in a silicon oxide film formed on a substrate via a silicon nitride film includes the step of performing etching using an etching gas composed of a mixture of Ar gas, Ogas, CFgas and CHFgas.

Etching memory

A plurality of metal interconnections are formed on a semiconductor substrate. The semiconductor substrate is held on a sample stage in a reactor chamber of a plasma processing apparatus and a material gas containing CF, CF, or CFas a main component is introduced into the reactor chamber, so that a first fluorine-containing organic film having cavities at positions between the metal interconnections is deposited between the metal interconnections and on the top surfaces of the metal interconnections.

Semiconductor device and method for fabricating the same

A fluorine-containing organic film is deposited on a semiconductor substrate using a material gas containing fluorocarbon as a main component in a reactor chamber of a plasma processing apparatus. The fluorine-containing organic film is then exposed to plasma of a rare gas in the same reactor chamber to densify the fluorine-containing organic film.

Method for fabricating semiconductor device

A fluorine-containing organic film having a relative dielectric constant of 4 or less is deposited on a semiconductor substrate using a material gas containing fluorocarbon as a main component in a reactor chamber of a plasma processing apparatus. During the deposition of the fluorine-containing organic film, a scavenger gas for scavenging fluorine constituting the fluorocarbon is mixed in the material gas. The proportion of the mixed scavenger gas in the material gas is changed to adjust the mechanical strength and relative dielectric constant of the fluorine-containing organic film.

The present invention provides various measures for preventing particles from being deposited on objects being processed during plasma processing. An electrode is disposed inside a reaction chamber, which is kept in a vacuum state by a turbo molecule pump and a dry pump that are provided for a main exhaust pipe. A substrate is placed on the electrode, a gas is introduced into the reaction chamber and then a voltage is applied from an RF power supply to the electrode and the substrate, thereby generating plasma regions in the reaction chamber. A large number of exhaust pipes, each having an opening, are disposed on substantially the same plane as the plane on which the interface between a plasma glow region and a plasma sheath is located. These multiple openings surround the interface between the plasma glow region and the plasma sheath.

Apparatus and method for fabricating semiconductor device

A plurality of metal interconnections are formed on a semiconductor substrate. The semiconductor substrate is held on a sample stage in a reactor chamber of a plasma processing apparatus and a material gas containing C F , C F , or C F as a main component is introduced into the reactor chamber, so that a first fluorine-containing organic film having cavities at positions between the metal interconnections is deposited between the metal interconnections and on the top surfaces of the metal interconnections.

A plasma processing apparatus includes a reaction chamber in which plasma is generated from a reactive gas introduced thereto and a film on a substrate is processed with the plasma generated. The main members of the reaction chamber are covered with protective members made of synthetic quartz.

Apparatus and method for plasma processing

A manufacturing apparatus for semiconductor devices comprises as a halogen scavenger a silicon ring (,) having an average surface roughness of 1-1000 &mgr;m, arranged around a silicon substrate (,) on a lower electrode (,) in a reaction chamber (,); and an upper silicon element (,) as another halogen scavenger, having an average surface roughness of 1-1000 &mgr;m, arranged above the silicon substrate (,). In this apparatus, C,F,is used as a gas to be introduced into the chamber (,) and fluorine can be effectively scavenged in the initial phase of operation, so that semiconductor devices can be aged faster than in conventional apparatus.

Semiconductor manufacturing apparatus

The present invention discloses a dry etching method using a high density plasma, in which a fluorocarbon gas, whose fluorine to carbon ratio is less than 2:1, is used. Such arrangement provides improved etching selectivity ratios to the resist film. The adding of an inert gas and oxygen to such a fluorocarbon gas provides further improved etching selectivity ratios and improved etching rates.

Dry etching method and semiconductor device fabrication method

A method for fabricating a semiconductor device according to the present invention includes the steps of: forming an oxide film on a substrate having a silicon region at least on the surface thereof; defining a resist pattern on the oxide film; placing the substrate on an electrode provided inside a reaction chamber of a plasma etching apparatus, and etching the oxide film by using plasma generated from a gas including a fluorocarbon gas with a bias voltage applied to the substrate; and removing fluorine from the reaction chamber by generating oxygen plasma inside the reaction chamber with substantially no bias voltage applied to the substrate.

Method for fabricating semiconductor device and method for controlling

A reactor is composed of a lower frame of a chamber, a quartz dome, an upper electrode, an 0 ring, and the like. A lower electrode and a substrate as a workpiece to be processed thereon are disposed in the reactor. The temperature of the quartz dome is maintained at a temperature of 180.degree. C. or higher by means of a heater. Fluorocarbon gas such as C.sub.2 F.sub.6 gas or C.sub.4 F.sub.8 gas is introduced into the reactor through a gas inlet and RF power from a first RF power source is applied to an antenna coil to produce a plasma and thereby etch an oxide film on the substrate. By heating the quartz dome to a high temperature, a deposit which hinders the release of oxygen from a wall face is prevented from being attached and the deposit on the bottom of the hole which causes an etch stop during processing is removed with oxygen. This prevents the etch stop during an etching process for forming a deep hole.

Growing community of inventors

Osaka, Japan

Nobuhiro Jiwari