Fujitsu Corporation

Nobuhiro Imaizumi

Seiki Sakuyama

Taiji Sakai

Masataka Mizukoshi

Keiji Watanabe

Yoshikatsu Ishizuki

Toshiya Akamatsu

Keishiro Okamoto

Tomohisa Yagi

Tadahiro Imada

Keisuke Uenishi

Kozo Shimizu

Hiroaki Date

Hideshi Tokuhira

Kenichi Yasaka

Toru Sakai

Makoto Usui

Hisashi Yamaguchi

Fumio Yamagishi

Junji Tomita

Shinji Tadaki

Kenji Fukuzono

Akinori Hayakawa

Makoto Sasaki

Aki Dote

Shigeaki Sekiguchi

Masaru Morita

Yasuhiro Usui

Shigeo Matsunuma

Hiroshi Onuki

Yuko Motoyama

Tetsuhiro Nakanishi

Ryo Kikuchi

An electronic device includes: a first circuit board; a second circuit board located above a first region of the first circuit board; a first semiconductor element located above a second region of the first circuit board, which is different from the first region, and above a third region of the second circuit board; a first connection interposed between the first semiconductor element and the second region so as to electrically interconnect the first semiconductor element and the first circuit board; and a second connection interposed between the first semiconductor element and the third region so as to electrically interconnect the first semiconductor element and the second circuit board.

Electronic device, method for manufacturing the electronic device, and electronic apparatus

A surface of at least one of a connection terminal of an electronic component and a connection terminal of a circuit board is covered with a protection layer made of a AgSn alloy. The connection terminal of the electronic component is soldered to the connection terminal of the circuit board.

Electronic component and electronic device

According to this disclosure, a method of manufacturing an electronic device is provided, which includes exposing a top surface of a first electrode of a first electronic component to organic acid, irradiating the top surface of the first electrode exposed to the organic acid with ultraviolet light, and bonding the first electrode and a second electrode of a second electronic component by heating and pressing the first electrode and the second electrode each other.

Method of manufacturing an electronic device, and electronic device manufacturing apparatus

An electronic component includes a substrate configured to include a first portion that first thermal conductivity, and have a first surface and a second surface opposite to the first surface; a second portion configured to be formed inside the first portion, and have second thermal conductivity lower than the first thermal conductivity; a first terminal configured to be formed to correspond to the second portion on a side of the first surface; and a second terminal configured to be formed on a side of the second surface.

Electronic component, electronic apparatus, and method of manufacturing electronic apparatus

An electronic apparatus includes: a first substrate; an electrode over the first substrate; a first conductor having a porous structure above the first substrate, the first conductor covering an upper surface and a side surface of the electrode; and an insulator above the first substrate, the insulator covering an upper surface and a side surface of the first conductor, wherein the insulator has an opening that exposes the first conductor.

Electronic apparatus and method for manufacturing electronic apparatus

An optical device includes: an optical integrated circuit chip that comprises an optical integrated circuit and an optical interface connected thereto; an electronic circuit chip that comprises an electronic circuit connected to the optical integrated circuit; a through wiring board that comprises a through wiring connected to the electronic circuit chip; a first bump that connects the optical integrated circuit and the electronic circuit between the optical integrated circuit chip and the electronic circuit chip; a second bump that connects the electronic circuit and the through wiring between the electronic circuit chip and the through wiring board; and a third bump connected to an end portion on an opposite side to the second bump of the through wiring. The optical integrated circuit chip and the through wiring board are disposed on a side of a first main surface of the electronic circuit chip. A first distance between the first main surface and a second main surface of the optical integrated circuit chip, the second main surface being on an opposite side to the electronic circuit chip, is equal to or smaller than a second distance between the first main surface and a vertex of the third bump, the vertex being on an opposite side to the electronic circuit chip.

Optical device and optical module

A manufacturing of a semiconductor device includes forming one of a layer with a first metal and the layer with a second metal on one of a semiconductor chip mounting area of a support plate and a back surface of the semiconductor chip; forming the other of the layer with the first metal and the layer with the second metal on an area corresponding to a part of the area, in which one of the layer with the first metal and the layer with the second metal, of the other one of the semiconductor chip mounting area and the back surface of the semiconductor chip; and forming a layer which includes an alloy with the first metal and the second metal after positioning the semiconductor chip in the semiconductor chip mounting area to bond the semiconductor chip with the semiconductor chip mounting area.

Semiconductor device and power source device

Electronic device having electrodes bonded with each other

Semiconductor device, manufacturing method of semiconductor device, and power source device

A method for manufacturing a semiconductor device includes placing a sheet containing a fibrous material having at least one outer surface having a metal on a semiconductor chip-mounting region of a substrate; forming a bonding layer containing a fusible metal on the semiconductor chip-mounting region; placing a semiconductor chip on the semiconductor chip-mounting region; and bonding the semiconductor chip to the semiconductor chip-mounting region with the fusible metal-containing bonding layer by heating.

Semiconductor device, method for manufacturing the same, and power supply unit

A solder includes Sn (tin), Bi (bismuth) and Zn (zinc), wherein the solder has a Zn content of 0.01% by weight to 0.1% by weight.

Solder, soldering method, and semiconductor device

A semiconductor device includes: a semiconductor chip including a nitride semiconductor layered structure including a carrier transit layer and a carrier supply layer; a first resin layer on the semiconductor chip, the first resin layer including a coupling agent; a second resin layer on the first resin layer, the second resin layer including a surfactant; and a sealing resin layer to seal the semiconductor chip with the first resin layer and the second resin layer.

Semiconductor device and method for producing the same, and power supply

A method of manufacturing a semiconductor device includes: forming a first layer including crystals by processing a surface of a first electrode of a semiconductor element; forming a second layer including crystals by processing a surface of a second electrode of a mounting member on which the semiconductor element is mounted; reducing a first oxide film present over or in the first layer and a second oxide film present over or in the second layer at a first temperature, the first temperature being lower than a second temperature at which a first metal included in the first electrode diffuses in a solid state and being lower than a third temperature at which a second metal included in the second electrode diffuses in a solid state; and bonding the first layer and the second layer to each other by solid-phase diffusion.

Method of manufacturing semiconductor device

The invention relates to a multi-layer display element configured by a plurality of layers for use as a display section of electronic paper or others, and a manufacturing method for the multi-layer display element. The invention provides a multi-layer display element that allows a pixel area not being narrowed, a high yield of electrode formation, and interlayer connection with no need for a high-temperature process, and a manufacturing method for such a multi-layer display element. The multi-layer liquid crystal display element includes a data signal output terminal group from which data signals are provided, a scanning signal output terminal group from which scanning signals are provided, a data electrode connection wire rod group respectively connecting data electrodes to the data signal output terminal group, and a scanning electrode connection wire rod group respectively connecting scanning electrodes to the scanning signal output terminal group.

Multi-layer display element and manufacturing method for the same

Growing community of inventors

Kawasaki, Japan

Nobuhiro Imaizumi