Other

Matsushita Electric Industrial Co., Ltd.

National Institute of Advanced Industrial Science and Technology

Nobuhiro Aya

Yuka Yamada

Nobuyasu Suzuki

Toshiharu Makino

Takehito Yoshida

Takafumi Seto

Fabrication of a quantum dot functional structure having ultra-fine particles homogeneously distributed in a transparent medium includes depositing such particles having a single particle diameter and uniform structure onto a substrate with the transparent medium. An apparatus for fabricating a quantum dot functional structure comprises: a generating chamber for generating high-purity ultra-fine particles by exciting a semiconductor target with pulsed laser light in low-pressure rare gas, and then allowing the semiconductor target to be detached or ejected by ablation and condensed and grown in the gas; a particle classifying chamber for classifying the ultra-fine particles; a depositing chamber for depositing the high-purity semiconductor ultra-fine particles and the transparent medium by exciting a transparent medium target with excimer laser light simultaneously or alternately when the particles are collected onto the substrate, and by collecting the substance generated through ablation onto the substrate; and a carrier gas exhaust system.

Method and apparatus for fabricating quantum dot functional structure, quantum dot functional structure, and optically functioning device

The present invention is to fabricate a quantum dot functional structure having ultra-fine particles homogeneously distributed in a transparent medium by efficiently fabricating high-purity ultra-fine particles having a single particle diameter and uniform structure and depositing the ultra-fine particles onto a substrate in conjunction with the transparent medium. For these purposes, an apparatus for fabricating a quantum dot functional structure is provided. The apparatus comprises: an ultra-fine particle generating chamber for generating high-purity ultra-fine particles by exciting a semiconductor target with pulsed laser light in a low-pressure rare gas atmosphere, and then by allowing the semiconductor target to be detached or ejected by ablation reaction and condensed and grown in the gas; an ultra-fine particle classifying chamber for classifying the ultra-file particles; a depositing chamber for depositing the high-purity semiconductor ultra-fine particles and the transparent medium by exciting a transparent medium target with excimer laser light at the same time or alternately when the high-purity semiconductor ultra-fine particles are collected onto the substrate, and by collecting the substance generated through ablation reaction onto the substrate; and a carrier gas exhaust system.

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Tsukuba, Japan

Nobuhiro Aya