Hitachi, Ltd.

Hitachi Media Electronics Co., Ltd.

Hitachi Video and Information System, Inc.

Hitachi Chemical Company, Ltd.

Hitachi Denshi Kabushiki Kaisha

Nobuhiko Shibagaki

Mitsutaka Hikita

Toyoji Tabuchi

Atsushi Isobe

Kengo Asai

Hisanori Matsumoto

Kazuyuki Sakiyama

Kazuhito Kurosawa

Naoki Matsuura

Osamu Hikino

Tetsuya Hirashima

Shigeki Matsuda

Takatoshi Akagi

Kazuyuki Yokoyama

Hideyuki Nagaishi

Chisaki Takubo

Atsushi Sumioka

Yuichi Shimayama

Tomomi Matsumoto

Satoshi Wakamori

Tomio Iwasaki

Masato Kijima

An antenna beam scan unit includes: a Rotman lens that performs power division and synthesis between plural antenna ports and three or more beam ports; plural antenna elements which are connected to the respective antenna ports and to or from which radio waves are inputted or outputted; plural amplifiers that are connected to the respective beam ports of the Rotman lens and perform amplitude modulation on a signal; input paths for a transmission signal disposed in association with the amplifiers; switches for switching the input paths; and a beam control unit. The input paths include first paths and second paths on which a signal that is out of phase with a signal on the first paths is produced. The beam control unit selects two adjoining beam ports, and can switch the first paths and second paths as the input paths for the two beam ports.

Antenna beam scan unit and wireless communication system using antenna beam scan unit

A compact resonator has a wide bandwidth and a small variation of the specific vibration frequency. The resonator is a thin film tuning-fork type inflection resonator in which a thin film made of a piezoelectric material is formed on a substrate on which a lower electrode is formed, and an upper electrode is formed on the piezoelectric thin film.

Thin film tuning-fork type inflection resonator and electric signal processing element

A technology which can realize a high-performance multiband operation in a compact circuit configuration and is advantageous for a wireless terminal of GSM system for which the further increase of the demands is expected in the future is provided. Provided is a multiband switch type antenna duplexer adopted in a mobile phone used in TDMA system such as the GSM system, in which the signals of respectively different first to fourth frequency bands (GSM 850, EGSM, DCS, PCS) share a single antenna, wherein switching elements such as receive filters and diodes are combined in various ways to perform the high-performance band switch with the minimum number of switching elements. The circuit of this antenna duplexer can realize not only the size reduction of the multiband switch antenna duplexer but also the size reduction and performance improvement of the wireless terminal itself.

Antenna duplexer and wireless terminal using the same

A bulk acoustic wave resonator which has excellent elasticity and high electromechanical energy conversion efficiency. A bulk acoustic wave resonator comprises a substrate, a lower electrode formed on the substrate, an interlayer formed on the lower electrode layer, a piezoelectric layer formed on the interlayer, and an upper electrode layer formed on the piezoelectric layer. Moreover, both the first lattice mismatch, which is determined between a short edge of the lattice constituting a closest packed plane of a material consisting of an interlayer and a short edge of the lattice constituting a closest packed plane of a material consisting of a piezoelectric layer, and the second lattice mismatch, which is determined between a long edge of the lattice constituting a closest packed plane of a material consisting of an interlayer and a long edge of the lattice constituting a closest packed plane of a material consisting of the piezoelectric layer, are 7% or less, and a lower electrode layer is a material in which the value of the elastic stiffness Cis 300 GN/mor more.

Bulk acoustic wave resonator, bulk acoustic wave filter, RF module including bulk acoustic wave resonator and/or filter, and bulk acoustic wave oscillator

A piezoelectric thin film resonator is formed on a base substrate such as made of Si in which the resonance frequency is substantially determined by the lateral size not by the thickness of the resonator, whereby a resonator for use in TCXO, etc. is provided by the thin film technique, which enables to reduce the thickness of the film and the size of the resonator and integration with Si-based IC incorporating the resonator in one identical substrate.

Piezoelectric thin film resonators

A compact, inexpensive antenna sharing device meeting requirements in terms of transmitter distortion characteristic and ESD characteristic is provided which separates and combines signals transmitted and received in first to third signal bands and which thereby enables an antenna terminal to be shared as a common terminal. It includes a diplexer realizing an attenuation characteristic for protection against ESD, a compound semiconductor switch with an IIP3 of 66 dBm or more, and an inexpensive PIN diode switch.

Antenna sharing device and wireless communication terminal using the same

An object of the present invention is to provide an inexpensive thin film piezoelectric bulk acoustic wave resonator that allows fine-tuning of a resonant frequency. Another object is to provide an inexpensive filter with dramatically improved frequency characteristics, using thin film piezoelectric bulk acoustic wave resonators that can be formed on one substrate. A thin film piezoelectric bulk acoustic wave resonator of the present invention has a laminated structure including a piezoelectric thin film, and a first metal electrode film and a second metal electrode film between which part of the piezoelectric thin film is sandwiched; the first metal electrode film has a plurality of holes formed on an electrode plane opposite to the second metal electrode film and having a depth equivalent to at least the thickness of the first metal electrode film; and if a combined thickness of top and bottom electrode layers and the piezoelectric thin film is ht, the covering ratio &#x3c3; of the electrode plane of the first metal electrode film satisfies a condition 0&#x3c;&#x3c3;&#x3c;1 for every 1.28 ht pitch.

Thin film piezoelectric bulk acoustic wave resonator and radio frequency filter using the same

A resonator is connected in parallel to at least one serial-arm-connected resonator in a resonator type filter having a serial arm and a parallel arm. At this time, the resonance frequency of the resonator connected in parallel is set to be substantially the same as the resonance frequency of the parallel-arm-connected resonator. This makes it possible to prevent the deterioration of attenuation levels at the lower-frequency side of the filter, caused by an increase in the resistance of a connection element due to an increase in packaging density.

Resonator type filter

An antenna duplexer is reduced in size, so that a dual-band/triple-band mobile radio terminal small in size and light in weight is realized. An off-set PLL modulation system is adopted, and a transmitting system of the antenna duplexer is constituted by switches. Further, in mounting an SAW filter, a multi-layer substrate is adopted, matching circuits and so on are formed by lumped-constant circuit elements, and the SAW filter is received in a space provided on the multi-layer substrate.

Mobile radio terminal and surface acoustic wave antenna duplexer

A radio frequency filter that can be miniaturized is provided. The radio frequency filter has a ladder-type resonator filter, a first terminal, a second terminal, a serial capacitance, a parallel capacitance, a serial inductance, and a parallel inductance. In the ladder-type resonator filter, a plurality of first surface acoustic wave resonators or first film bulk acoustic resonators are connected in a ladder circuit configuration. The serial inductance and the parallel capacitance are connected between the ladder-type resonator filter and the first terminal. The serial capacitance and the parallel inductance are connected between the ladder-type resonator filter and the second terminal.

Radio frequency filter, radio frequency circuit, antenna duplexer and radio terminal

A surface acoustic wave antenna duplexer constituted by a transmitter-line filter, a receiver-line filter and an antenna terminal, the transmitter-line filter and the receiver-line filter being connected in parallel with the antenna terminal as a common terminal; wherein at least one of the transmitter-line and receiver-line filters includes a top filter using the whole of a transmitter band or a receiver band as its pass band, a surface acoustic wave resonator filter, and a transmitter or receiver terminal, the top filter, the surface acoustic wave resonator filter and the transmitter or receiver terminal being disposed in this order viewed from the antenna terminal, the surface acoustic wave resonator filter including at least one additive capacitance or inductance; and wherein a switching element is provided for varying a value of the capacitance or inductance so as to provide a function for varying a pass band frequency or an attenuation band frequency of the surface acoustic wave resonator filter.

Band-switchable surface acoustic wave antenna duplexer and mobile radio terminal

A surface acoustic wave signal processing apparatus for processing first and second high-frequency signals having frequencies f.sub.1 and f.sub.2 respectively, which comprises: first and second surface acoustic wave delay elements for receiving the first and second high-frequency signals respectively and independently of each other, the delay elements being formed as surface acoustic wave excitation and reception transducers on a piezoelectric substrate so that a phase delay .phi..sub.1 with respect to the frequency f.sub.1 is substantially equal to a phase delay .phi..sub.2 with respect to the frequency f.sub.2 (that is, .phi..sub.1 .apprxeq..phi..sub.2); and a mixer for mixing first and second high-frequency output signals of the first and second surface acoustic wave delay elements so that a signal having a frequency .vertline.f.sub.1 -f.sub.2 .vertline. which is a difference between the two frequencies f.sub.1 and f.sub.2 is taken out as an output signal of the mixer.

CDMA communication RF signal processing apparatus using SAW

Without increasing propagation loss or diffraction loss, (unlike conventional surface acoustic wave, SAW, filters which need many electrode finger pairs for constructing interdigital transducers, IDTs, to realize a steep cutoff frequency characteristic by conventional weighting or apodization that involves a high propagation loss and a high diffraction loss), there is provided a SAW filter with a very steep cutoff frequency characteristic on the low frequency side which uses three IDTs having N1, N2 and N3 electrode finger pairs, respectively. The filter is particularly applicable to a mobile radio communication device, such as a cellular radio. The relation between all the number of pairs N1+N2+N3 of the IDTs and the electromechanical coupling coefficient k.sup.2 of the piezoelectric substrate is N2&lt;(N1+N3)&lt;3.times.N2, and 2/k.sup.2 .gtoreq.(N1+N2+N3).gtoreq.0.8/k.sup.2.

Structure of surface acoustic wave filter

A high frequency module is disclosed which comprises a high frequency device in a package, a circuit formed on a flexible substrate in the package, the circuit, the high frequency device and input/output terminals of the package being connected electrically.

Growing community of inventors

Kokubunji, Japan

Nobuhiko Shibagaki