Sanyo Electric Co., Ltd.

Sony Corporation

Epson Imaging Devices Corporation

Nobuhiko Oda

Tsutomu Yamada

Shiro Nakanishi

Yoshihiro Morimoto

Satoshi Ishida

Toshifumi Yamaji

Kiyoshi Yoneda

Shinji Ogawa

Hisashi Abe

Norio Koma

Koji Suzuki

Hiroki Hamada

Kazuhiro Inoue

Kiichi Hirano

Shinji Yuda

Tohru Yamashita

Eiji Taguchi

Nobuhiro Gouda

Yasushi Miyajima

Masaaki Aota

Moriyasu Nagura

Kazuyoshi Sakai

Masahiro Kaida

Kazuki Abe

Shinya Inage

Tomoyasu Hirata

Kosuke Takasu

Kou Masahara

A semiconductor device according to an embodiment of the disclosure includes: a first substrate; a TFT element provided on the first substrate with a first interlayer insulating layer interposed therebetween, and including a semiconductor layer and a gate electrode that is provided on the semiconductor layer with a gate insulating layer interposed therebetween; and a second substrate disposed to face the first substrate. The gate electrode includes a first electroconductive film and a second electroconductive film that has a light-shielding property in order from side of the semiconductor layer. The second electroconductive film extends from a side face to a bottom face of each of a pair of openings that are provided to interpose the semiconductor layer.

Semiconductor device and projection-type display unit

An electro-optic device includes a pixel section and a terminal section through which a semiconductor circuit or a wiring board is mounted around the pixel section. The terminal section has a multilayer structure including a terminal connection wire including an uppermost layer containing titanium, a terminal interlayer made of an electroconductive material capable of being wet-etched, and a terminal transparent electroconductive film in that order from below.

Electro-optic device having terminal section and pixel section with particular multilayer structures

A portion of a protective layer located above a connection portion is removed to expose the connection portion which is formed of the same material as used for a data line DL in this removed portion. Then, a transparent conductive layer made of ITO is further formed on these films. The transparent conductive layer and a bump are then connected via an AFC.

Display apparatus and manufacturing method of display apparatus

On a first substrate are formed a TFT provided to each pixel, an insulating film which covers the TFT, and a reflective layer which is provided on the insulating film so as to be insulated from the TFT and reflects light incident from a second substrate side. The reflective layer is covered with a passivation film on which a first electrode made of a transparent conductive material, such as ITO having the work function equivalent to a second electrode, is formed and connected to the TFT. The passivation film covering the reflective layer prevents the reflective surface of the reflective layer from deteriorating in reflection properties during a process for connecting the TFT and the first electrode. Further, the first and second electrodes having similar characteristics can symmetrically AC drive the liquid crystal layer.

Display apparatus and manufacturing method thereof

A reflective layer for reflecting light incident from a second substrate side and transmitting through a second electrode made of ITO or the like is formed above a first substrate, a switching element provided for each pixel, and an insulating film covering the switching element, the reflective layer being insulated from the switching element. A first electrode having a work function similar to the second electrode and made of a transparent conductive material such as ITO is formed more proximate to a liquid crystal layer than is the reflective layer and is connected to the switching element. The thickness of the first electrode is set to 100 &#x212b; or less or in a range approximately from 750 &#x212b; to 1250 &#x212b;. Alternatively, the switching element maybe connected to the reflective electrode, the first electrode and the reflective electrode which are formed with an insulating film therebetween may be capacitively coupled, and the first electrode may be driven by the reflective electrode via the capacitor.

Liquid crystal display apparatus having reflective layer

Liquid crystal display apparatus having insulated reflective layer and manufacturing method thereof

According to the present invention, there is provided a display, in which the degradation of a displaying quality caused by a turbulently reflected light beam at the time of exposure can be suppressed. The display according to the present invention having a reflective region and a transmissive region comprises a projecting insulating layer formed in a region corresponding to the reflective region on a substrate and a light shielding layer formed under the projecting insulating layer and formed to extend at least up to a region in which a side end of the projecting insulating layer is located.

Display

In a bottom gate-type thin-film transistor manufacturing method, after ion doping, an ion stopper () is removed. The ion stopper () does not remain in the interlayer insulating film () lying immediately above the gate electrode. The thin-film transistor has such a structure that no ion stopper (), and the interlayer insulating layer is in direct contact with at least the channel region of the semiconductor layer (). The impurity concentration in the vicinity of the interface between the interlayer insulating film and the semiconductor layeris 10atoms/cc or less. This structure can prevent the back channel phenomenon and reduce variations in characteristic resulting from variations in manufacturing.

Bottom gate-type thin-film transistor and method for manufacturing the same

Liquid crystal display apparatus having a transparent layer covering a reflective layer

In a bottom gate-type thin-film transistor manufacturing method, after ion doping, an ion stopper is removed. The ion stopper does not remain in the interlayer insulating film lying immediately above the gate electrode. The thin-film transistor has such a structure that no ion stopper, and the interlayer insulating layer is in direct contact with at least the channel region of the semiconductor layer. The impurity concentration in the vicinity of the interface between the interlayer insulating film and the semiconductor layer is 10 atoms/cc or less. This structure can prevent the back channel phenomenon and reduce variations in characteristic resulting from variations in manufacturing.

In an organic electroluminescence (EL) display, a TFT ( ) and an organic EL element ( ) are formed on an insulating substrate ( ) such as a glass substrate. The contact portion between the first electrode region (e.g. the source ) of the active layer ( ) of the TFT ( ) and the organic EL element ( ) is formed of a laminated structure. The laminated structure is formed of the structure stacked in layers with p-si forming the source ( ), a refractory metal (Mo), aluminum, a refractory metal (Mo), and ITO forming the anode . The reliable contact between the source and the anode can prevent variations in brightness and early degradation in characteristic of the TFT and the organic EL element

Organic electroluminescence display with improved contact characteristics

Thin film transistor and manufacturing method of thin film transistor

A method of manufacturing a polycrystalline silicon film having a particular field effect mobility is disclosed. A first polycrystalline silicon film is formed on a transparent insulation substrate. The surface of the silicon film is oxidized, and an amorphous silicon film is formed on the first polycrystalline silicon film and oxide layer. The amorphous silicon film is subjected to a solid phase growth process to be converted to a second polycrystalline silicon film. The field effect mobility of the second polycrystalline silicon film can be adjusted to a desired value by controlling the relative thicknesses of the first and second polycrystalline silicon films.

Thin film transistors for display devices having two polysilicon active layers of different thicknesses

On a transparent substrate, on which is positioned a gate electrode, a silicon nitride film and a silicon oxide film are formed as gate insulating films, and furthermore a polycrystalline silicon film is formed as a semiconductor film to become an active region. A stopper is positioned on the polycrystalline silicon film to correspond to a gate electrode, and a silicon oxide film, a silicon nitride film, and a silicon oxide film are formed as interlayer insulating film so as to cover the stopper. Contact holes are formed in the layer insulating film to correspond to a source region and a drain region, and a source electrode and a drain electrode are positioned through these contact holes. Since the silicon oxide film having a fast etching rate is formed on the silicon nitride film having a slow etching rate, the etching from the silicon oxide film above the silicon nitride film dominates when forming the contact holes in the layer insulating film so that the etched shape of the silicon nitride film assumes a tapered shape widening toward the top.

Thin-film transistor and manufacturing method for improved contact hole

A gate electrode, silicon nitride film, silicon oxide film and silicon film are formed on an insulating substrate. A silicon oxide film and silicon nitride film are formed on the silicon film, and first and second contact holes are formed which penetrate these films. An electrode in contact with a drain area is arranged via the first contact hole. The whole is covered with a plagiarizing film, a third contact hole of smaller diameter than that of the second contact hole is formed corresponding to the second contact hole embedded by the planarizing film, and a transparent electrode in direct contact with a source area is arranged via the third contact hole. In this way, the contact resistance between the transparent electrode and the source area is reduced, and a simplified construction display device is obtained wherein the contact reliability of both electrodes is improved.

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Hashima, Japan

Nobuhiko Oda