Sony Corporation

Nobuhide Yoneya

Hirofumi Nakamura

Toru Tanikawa

Satoshi Kumon

Mao Katsuhara

Shin Akasaka

Shota Nishi

Yasuhiro Watanabe

Akira Yumoto

Hiroto Kawaguchi

Shinichi Ushikura

Shimpei Tsujikawa

Akihiro Nomoto

Ryouichi Yasuda

Junji Iwasaki

Norio Kimura

Kazumasa Nomoto

Masaki Murata

Hironobu Abe

Takahiro Ohe

Provided is an information presentation apparatus that includes an actuator, a control unit and a belt. The actuator includes a movable portion and is capable of linearly driving the movable portion. The control unit controls the actuator so that the movable portion is driven corresponding to waveform information. The belt is for attaching the actuator to a user.

Information presentation apparatus

There are provided a display in which a sealing section is prevented from being spread and the sealing section is allowed to be provided in a desired region, and an electronic unit including the display. The display includes: a substrate including a sealing region and a step section, the sealing region surrounding a display region, and the step section surrounding the sealing region from outside; a display layer provided in the display region; and a sealing section provided in the sealing region.

Display and electronic unit

An information presentation apparatus which includes an actuator, a control unit and a belt. The actuator includes a movable portion and is capable of linearly driving a movable portion. The control unit controls the actuator so that the movable portion is driven corresponding to waveform information. The belt is to attach the actuator to a user.

A display device includes: a display layer; a surface film disposed to face a display surface of the display layer; and a moisture-proof film disposed between the display layer and the surface film and including a projecting section. The projecting section projects outwardly of an end face of the display layer and an end face of the surface film.

Display device and electronic apparatus

A transistor includes: a gate electrode; a semiconductor layer facing the gate electrode with an insulating layer in between; a pair of source-drain electrodes electrically connected to the semiconductor layer; and a contact layer provided in a moving path of carriers between each of the pair of source-drain electrodes and the semiconductor layer, the contact layer having end surfaces covered with the source-drain electrode.

Transistor, display, and electric apparatus

Transistor, display, and electronic apparatus

A semiconductor device is provided and includes a field effect transistor having a gate electrode, a gate insulating layer, a channel forming region composed of an organic semiconductor material layer and a source/drain electrode made of a metal. A portion of the source/drain electrode in contact with the organic semiconductor material layer comprising the channel forming region is covered with an electrode coating material. Because the electrode coating material is composed of organic molecules having a functional group which can be bound to a metal ion and a functional group that binds to the source/drain electrode composed of the metal, low contact resistance and high mobility can be achieved.

Electrode covering material, electrode structure and semiconductor device

An organic thin film transistor is disclosed, including a substrate formed of an organic insulating layer, a first layer deposited on the substrate using a plating technique to be used for forming a source electrode and a drain electrode, a second layer of a metal material deposited covering the first layer using a further plating technique to be used for forming the source electrode and the drain electrode with the metal material capable of forming an ohmic contact with an organic semiconductor material lower than the first layer, and an organic semiconductor layer over a region between the source electrode and the drain electrode, which are each formed with the first layer and the second layer. Also disclosed is an electric device provided with the organic thin film transistor.

Organic thin film transistor, production method thereof, and electronic device

A semiconductor device includes first layer wiring including a gate electrode mounted on a substrate; a gate insulating film having an opening that exposes part of the first layer wiring and covering the entire surface of the substrate including the gate electrode; second layer wiring including a source electrode and a drain electrode mounted on the gate insulating film; an insulating partition layer having a first opening that exposes an edge between the source electrode and the drain electrode and a part of the gate insulating film between the source electrode and the drain electrode and a second opening that is aligned with the opening formed in the gate insulating film; and an organic semiconductor layer disposed across the source electrode and the drain electrode at the bottom surface of the first opening formed in the partition layer.

Semiconductor device with bottom gate organic thin-film transistor, and display device and electronic equipment with same

A display includes: a display substrate including a liquid crystal layer; a driving substrate driving the display substrate; and a damp-proof layer continuously provided along a top face and side faces of the display substrate, and a top face of the driving substrate.

The present invention provides a method of manufacturing a thin film transistor of a top-contact structure with suppressed deterioration by a process which is easy and suitable for increase in area without damaging an organic semiconductor pattern. The organic semiconductor pattern is formed on a substrate. An electrode material film is formed on the substrate so as to cover the organic semiconductor pattern. A resist pattern is formed on the electrode material film. By wet etching using the resist pattern as a mask, the electrode material film is patterned. By the process, a source electrode and a drain electrode are formed.

Thin film transistor and method for producing the same

Disclosed herein is a display apparatus including first and second substrates, at least one of which has a light transmitting characteristic, as well as first and second electrodes provided on the two mutually facing surfaces of the first and second substrates respectively; and an electrophoretic device provided between the first and second substrates, wherein the first substrate and the first electrode each have an external edge folded back so as to cover at least a portion of a terminal surface of the second substrate.

Display apparatus

A semiconductor device includes an organic semiconductor layer, and a protective film. The protective film covers a side wall of the organic semiconductor layer. An insulating partition wall is disposed on the substrate. The partition wall includes an opening. The organic semiconductor layer includes a first portion that is disposed within the opening of the partition wall. The protective film fills the inside of the opening of the partition wall.

Growing community of inventors

Kanagawa, Japan

Nobuhide Yoneya