Kabushiki Kaisha Toshiba

Other

Toshiba Electronic Devices & Storage Corporation

Nobuhide Yamada

Rempei Nakata

Hideshi Miyajima

Katsuya Okumura

Shinichi Ito

Kei Hayasaki

Tatsuhiko Ema

Yoshihiro Ogawa

Masahiro Kiyotoshi

Takeshi Hizawa

Akihiro Kojima

Takahiro Kitano

Nobuo Hayasaka

Eiji Hayashi

Kei Watanabe

Miyoko Shimada

Yasushi Nakasaki

Kinji Yamada

Atsushi Shiota

Shinji Kobayashi

Nobuyuki Kurashima

Takuo Kikuchi

Takahiko Kurosawa

Hideto Matsuyama

Kazuyuki Ito

Satoshi Akutsu

Motonobu Kawai

Mutsuhiko Yoshioka

Makoto Sugiura

Youngsoon Seo

According to one embodiment, a stereoscopic image display device includes a three-dimensional pixel unit, a backlight, and an arithmetic/control circuit. The three-dimensional pixel unit includes a plurality of pixel cells that are formed of an optical material having electrically changeable optical characteristics, are arranged in a mutually separated manner and in a three-dimensional manner, and are electrically connected with transparent wiring patterns. The backlight is configured to emit illumination light to the three-dimensional pixel unit. The arithmetic/control circuit is configured to control the plurality of pixel cells individually via the wiring patterns on the basis of input three-dimensional image data to cause the three-dimensional pixel unit to function as a transmissive hologram.

Stereoscopic image display device

A semiconductor device includes a first electrode, a second electrode, a semiconductor part located between the first electrode and the second electrode, a third electrode located in the semiconductor part, an insulating film located between the third electrode and the semiconductor part, an insulating member located in the semiconductor part at a position separated from the insulating film, a fourth electrode located in the insulating member, and a compressive stress member located in the fourth electrode. The compressive stress member has compressive stress along a first direction. The first direction is from the first electrode toward the second electrode.

Semiconductor device

A digital isolator according to an embodiment includes a first electrode, a first insulating part, a second electrode, a second insulating part, and a first dielectric part. The first insulating part is located under the first electrode. The second electrode is located under the first insulating part. The second insulating part is located around the first electrode along a first plane perpendicular to a first direction. The first direction is from the second electrode toward the first electrode. The first dielectric part is located between the first electrode and the second insulating part in a second direction along the first plane. The first dielectric part contacts the first electrode. A relative dielectric constant of the first dielectric part is greater than a relative dielectric constant of the first insulating part.

Digital isolator

A method of manufacturing a semiconductor device in which an insulating film is filled between patterns etched into a workpiece structure is disclosed. The method includes cleaning etch residues residing between the etched patterns by a first chemical liquid; rinsing the workpiece structure cleaned by the first chemical liquid by a rinse liquid; and coating the workpiece structure rinsed by the rinse liquid with a coating liquid for formation of the insulating film. The cleaning to the coating are carried out within the same processing chamber such that a liquid constantly exists between the patterns of the workpiece structure.

Method of manufacturing semiconductor device and apparatus for manufacturing semiconductor device

There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5&#xd7;10q&#x3b3; (mm) given with respect to a surface tension &#x3b3; (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5&#xd7;10(m&#xb7;sec/N).

Film forming method, film forming apparatus, pattern forming method, and manufacturing method of semiconductor apparatus

Disclosed is a method of manufacturing a semiconductor device which includes: providing an insulating film formed above a semiconductor substrate with a processed portion; supplying a surface of the processed portion of the insulating film with a primary reactant from a reaction of a raw material including at least a Si-containing compound; and subjecting the primary reactant to dehydration condensation to form a silicon oxide film on the surface of the processed portion.

Method of manufacturing semiconductor device

According to one aspect of the present invention, there is provided a composition for film formation, comprising a compound represented by general formula (I) or a hydrolyzed-dehydrocondensation product thereof:XRSiRSiRX&#x2003;&#x2003;(I)wherein Rand Rrepresent a hydrogen atom or a monovalent substituent; Rrepresents a divalent group having an alicyclic structure with four carbon atoms or a derivative of the divalent group; Xand Xrepresent a hydrolysable group; and m and n are an integer of from 0 to 2.

Composition for film formation, insulating film, semiconductor device, and process for producing the semiconductor device

A method of fabricating a semiconductor device includes forming trench-like recesses in a semiconductor substrate, the recesses including one or more recesses each of which has an opening width of not more than a predetermined value, forming a first insulating film above the substrate after the recesses have been formed, so that one or a plurality of voids are formed in the one or more recesses whose opening widths are not more than the predetermined value, removing part of the first insulating film so that a beam is left which spans the openings so that the beam passes over upper surfaces of the one or more recesses and so that at least the voids are exposed in a portion of the substrate except the beam, and filling the voids in the recesses with a material with fluidity, thereby forming second insulating films in the recesses.

Method of fabricating semiconductor device and the semiconductor device

A manufacturing method for a semiconductor device includes generating on a substrate liquid-phase silanol having fluidity by causing a source gas made of a material containing silicon to react with a source gas made of a material containing oxygen, introducing the silanol into a first recess having an aspect ratio of a predetermined value wholly, and introducing the silanol into a space from a bottom to an intermediate portion in a second recess having an aspect ratio lower than the predetermined value, the first and second recesses are provided in the substrate, burying a silicon oxide film in the first recess and providing the silicon oxide film in the second recess by converting the silanol into the silicon oxide film by dehydrating condensation, and providing a dielectric film having film density higher than that of the silicon oxide film on the silicon oxide film.

Manufacturing method for semiconductor device

There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5&#xd7;10q&#x3b3; (mm) given with respect to a surface tension &#x3b3; (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5&#xd7;10(m&#xb7;sec/N)

There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5&times;10 q&ggr; (mm) given with respect to a surface tension &ggr; (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5&times;10 (m&middot;sec/N).

A method of manufacturing a semiconductor device according to an aspect of the present invention comprises forming a low dielectric constant insulating film having a siloxane bond as main skeleton on a semiconductor substrate, causing a surfactant to permeate the low dielectric constant insulating film, and conducting a predetermined step on the low dielectric constant insulating film permeated with the surfactant in a state adapted to be exposed to water.

A coating solution for used in a scan coating method contains a low vapor pressure solvent having a vapor pressure lower than 1 Torr (133.322 Pa) at room temperature.

Growing community of inventors

Tokyo, Japan

Nobuhide Yamada