Ebara Corporation

Kabushiki Kaisha Toshiba

Other

Nikon Corporation

Ckd Corporation

Technology Research Association of Super Heat Pump Energy Accumulation

Nobuharu Noji

Tohru Satake

Mamoru Nakasuji

Takeshi Murakami

Masahiro Hatakeyama

Shoji Yoshikawa

Tsutomu Karimata

Hirosi Sobukawa

Toshifumi Kimba

Kenji Watanabe

Mutsumi Saito

Shin Oowada

Yuichiro Yamazaki

Ichirota Nagahama

Takao Kato

Muneki Hamashima

Kenichi Suematsu

Takamitsu Nagai

Norihiko Nomura

Keiichi Tohyama

Ryo Tajima

Toru Takagi

Yutaka Tabe

Kenji Terao

Kazuyoshi Sugihara

Kiyoshi Yanagisawa

Hiroshi Sobukawa

Yoshihiko Naito

Tetsuro Sugiura

Hiroshi Nishimura

Naoto Kihara

Koji Ono

Toshiharu Nakazawa

Yukiharu Okubo

Yoshiaki Kohama

Atsushi Onishi

Masami Nagayama

Katsuya Okumura

Yuji Matsuoka

Satoshi Mori

Shinichi Sekiguchi

Tatsuhiko Higashiki

Hiroshi Aono

Yoshinori Ojima

Tetsuo Komai

Hiroaki Ogamino

Shunichi Aiyoshizawa

Junichi Hayakawa

Yasuo Ogawa

Yasuhiro Niimura

Koichi Kido

Motoyasu Sato

Yoshinao Hirabayashi

Masatoshi Tsuneoka

Toru Kaga

Hiroshi Hattori

Keiji Koike

Mitsumi Saito

Masahiro Hatakayama

Setsuji Shinoda

A substrate is irradiated by primary electrons and secondary electrons generated from the substrate are detected by a detector. A reference die is placed on the stage to obtain a pattern matching template image including feature coordinates of the reference die. A pattern matching is performed with an arbitrary die in a row or column including the reference die using the template image to obtain feature coordinates of the arbitrary die. An angle of misalignment is calculated between the direction of the row or column including the reference die and one of the directions of movement of the substrate on the basis of the feature coordinates of the arbitrary die and those of the reference die. The stage is rotated to correct the angle of misalignment to conform the direction of the row or column including the reference die with the one of the directions of movement of the substrate.

Testing apparatus using charged particles and device manufacturing method using the testing apparatus

An electron beam apparatus for capturing images by deflecting a primary electron beam by a deflector to irradiate each of sub-visual fields which are formed by dividing an evaluation area on a sample surface, and detecting secondary electrons containing information on the sample surface in each of the sub-visual fields by a detecting device. The detecting device includes a plurality of unit detectors each including an area sensor, a bundle of optical fibers having one end coupled to a detection plane of the area sensor, and an FOP coated on the other end of the bundle of optical fibers and formed with a scintillator, on which a secondary electron beam emitted from the respective sub-visual field is focused. An electromagnetic deflector deflects the secondary electron beam each time the electron beam is irradiated to the next sub-visual field to move the secondary electron beams over the surfaces of the FOPs.

Electro-optical inspection apparatus using electron beam

An inspection apparatus by an electron beam comprises: an electron-optical devicehaving an electron-optical system for irradiating the object with a primary electron beam from an electron beam source, and a detector for detecting the secondary electron image projected by the electron-optical systems; a stage systemfor holding and moving the object relative to the electron-optical system; a mini-environment chamberfor supplying a clean gas to the object to prevent dust from contacting the object; a working chamberfor accommodating the stage device, the working chamber being controllable so as to have a vacuum atmosphere; at least two loading chambersdisposed between the mini-environment chamber and the working chamber, adapted to be independently controllable so as to have a vacuum atmosphere; and a loaderfor transferring the object to the stage system through the loading chambers.

Inspection system by charged particle beam and method of manufacturing devices using the system

Provided is a method and an apparatus for inspecting a sample surface with high accuracy. Provided is a method for inspecting a sample surface by using an electron beam method sample surface inspection apparatus, in which an electron beam generated by an electron gun of the electron beam method sample surface inspection apparatus is irradiated onto the sample surface, and secondary electrons emanating from the sample surface are formed into an image toward an electron detection plane of a detector for inspecting the sample surface, the method characterized in that a condition for forming the secondary electrons into an image on a detection plane of the detector is controlled such that a potential in the sample surface varies in dependence on an amount of the electron beam irradiated onto the sample surface.

Method and apparatus for inspecting sample surface

A substrate inspection apparatus-(FIG.) of the present invention performs the following steps of: carrying a substrate 'S' to be inspected into an inspection chamber-; maintaining a vacuum in said inspection chamber; isolating said inspection chamber from a vibration; moving successively said substrate by means of a stage-with at least one degree of freedom; irradiating an electron beam having a specified width; helping said electron beam reach to a surface of said substrate via a primary electron optical system-; trapping secondary electrons emitted from said substrate via a secondary electron optical system-and guiding it to a detecting system-; forming a secondary electron image in an image processing system based on a detection signal of a secondary electron beam obtained by said detecting system; detecting a defective location in said substrate based on the secondary electron image formed by said image processing system; indicating and/or storing said defective location in said substrate by CPU-; and taking said completely inspected substrate out of the inspection chamber. Thereby, the defect inspection on the substrate can be performed successively with high level of accuracy and efficiency as well as with higher throughput.

Apparatus for inspection with electron beam, method for operating same, and method for manufacturing semiconductor device using former

An inspection apparatus by an electron beam comprises: an electron-optical devicehaving an electron-optical system for irradiating the object with a primary electron beam from an electron beam source, and a detector for detecting the secondary electron image projected by the electron-optical system; a stage systemfor holding and moving the object relative to the electron-optical system; a mini-environment chamberfor supplying a clean gas to the object to prevent dust from contacting to the object; a working chamberfor accommodating the stage device, the working chamber being controllable so as to have a vacuum atmosphere; at least two loading chambersdisposed between the mini-environment chamber and the working chamber, adapted to be independently controllable so as to have a vacuum atmosphere; and a loaderfor transferring the object to the stage system through the loading chambers.

An inspecting apparatus for reducing a time loss associated with a work for changing a detector is characterized by comprising a plurality of detectorsfor receiving an electron beam emitted from a sample W to capture image data representative of the sample W, and a switching mechanism M for causing the electron beam to be incident on one of the plurality of detectors, where the plurality of detectorsare disposed in the same chamber MC. The plurality of detectorscan be an arbitrary combination of a detector comprising an electron sensor for converting an electron beam into an electric signal with a detector comprising an optical sensor for converting an electron beam into light and converting the light into an electric signal. The switching mechanism M may be a mechanical moving mechanism or an electron beam deflector.

Detector and inspecting apparatus

A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source, then forms an image under a desired magnification in the direction of a sample W to produce a crossover. When the crossover is passed, electrons as noises are removed from the crossover with an aperture, an adjustment is made so that the crossover becomes a parallel electron beam to irradiate the substrate in a desired sectional form. The electron beam is produced such that the unevenness of illuminance is 10% or less. Electrons emitted from the sample W are detected by a detector

The present invention provides a surface inspection method and apparatus for inspecting a surface of a sample, in which a resistive film is coated on the surface, and a beam is irradiated to the surface having the resistive film coated thereon, to thereby conduct inspection of the surface of the sample. In the surface inspection method of the present invention, a resistive film having an arbitrarily determined thickness tis first coated on a surface of a sample. Thereafter, a part of the resistive film having the arbitrarily determined thickness tis dissolved in a solvent, to thereby reduce the thickness of the resistive film to a desired level. This enables precise control of a value of resistance of the resistive film and suppresses distortion of an image to be detected.

Sample surface inspection apparatus and method

An electron beam apparatus, in which an electron beam emitted from an electron gun having a cathode and an anode is focused and irradiated onto a sample, and secondary electrons emanated from the sample are directed into a detector, the apparatus further comprising means for optimizing irradiation of the electron beam emitted from the electron gun onto the sample, the optimizing means may be two-stage deflectors disposed in proximity to the electron gun which deflects and directs the electron beam emitted in a specific direction so as to be in alignment with the optical axis direction of the electron beam apparatus, the electron beam emitted in the specific direction being at a certain angle with respect to the optical axis due to the fact that, among the crystal orientations of said cathode, a specific crystal orientation allowing a higher level of electron beam emission out of alignment with the optical axis direction.

Electron beam apparatus and a device manufacturing method by using said electron beam apparatus

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Kanagawa, Japan

Nobuharu Noji