Fuji Xerox Co., Ltd.

Other

Tokyo Institute of Technology

Fumio Koyama

Nobuaki Ueki

Hiromi Otoma

Hideo Nakayama

Hideki Fukunaga

Yasuji Seko

Mario Fuse

Akemi Murakami

Akira Sakamoto

Naotaka Mukoyama

Kiichi Ueyanagi

Kaoru Yasukawa

Jun Sakurai

Masahiro Yoshikawa

Masao Ito

Yasuhiro Shiraki

Tsuyoshi Inoue

Izumi Iwasa

Masateru Yamamoto

Takeshi Nakamura

Yasuaki Miyamoto

Ryoji Ishii

Kazuyuki Matsushita

Terutaka Inoue

Provided is a VCSEL array device that includes at least a first multilayer reflective film, an active layer, and a second multilayer reflective film, formed on a substrate that extends in a longitudinal direction. Plural mesa portions are formed on the substrate by selectively removing at least a portion of the first multilayer reflective film, active layer, and second multilayer reflective film. A selectively oxidized region is formed in at least one of the first multilayer reflective film and the second multilayer reflective film. The VCSEL array device further includes an interlayer insulating film that covers at least a side portion and a bottom portion of the mesa portions, and a surface protecting film that covers the interlayer insulating film. The surface protecting film has plural grooves formed along a longitudinal direction of the substrate in which at least a portion of the surface protecting film is removed.

VCSEL array device and method for manufacturing the VCSEL array device

A surface-emitting semiconductor array device includes a substrate, a plurality of light-emitting portions, an electrode pad portion formed on the substrate and disposed through the plurality of light-emitting portions and a dividing groove, and having a plurality of electrode pads formed on an insulating film, and a plurality of metal wirings for connecting each of the plurality of light-emitting portions to a corresponding electrode pad through the dividing groove, the dividing groove has a wave-shaped side wall formed on the substrate.

Surface-emitting semiconductor array device, module, light source device, data processing apparatus, light transmitting device, light spatial transmitting apparatus, and light spatial transmitting system

A VCSEL including a substrate, a first semiconductor layer of a first conductivity-type formed on the substrate, an active layer formed on the first semiconductor layer, a second semiconductor layer of a second conductivity-type formed on the active layer, a first electrode wiring formed on a main surface of the substrate and electrically connected with the first semiconductor layer, a second electrode wiring formed on the main surface of the substrate and electrically connected with the second semiconductor layer, and a light emitting portion formed on the substrate for emitting laser light. A contact portion at which the first electrode wiring is electrically connected to the first semiconductor layer is formed in a range equal to or greater than &#x3c0;/2 radians and within &#x3c0; radians, centering on the light emitting portion.

VCSEL with improved high frequency characteristics, semiconductor laser device, module, and optical transmission device

A surface emitting semiconductor laser diode includes a substrate, a first reflective layer formed over the substrate, an active layer formed over the first reflective layer, a second reflective layer formed over the active layer, a first conductive layer having an opening therein and formed over the second reflective layer, and an additional reflective layer formed over the second reflective layer so as to cover the opening, wherein the additional reflective layer is covered, at least at a portion thereof, with a second conductive layer.

Surface emitting semiconductor laser diode and manufacturing method thereof

A vertical cavity surface emitting laser diode includes a lower semiconductor reflector, an active region, an upper semiconductor reflector constituting a resonator with the lower semiconductor reflector, a metallic part being formed on the upper semiconductor reflector, which has a first aperture defining an output region of laser light generated in the active region, and a light confining region being provided between the metallic part and the lower semiconductor reflector, and having a second aperture defining an emission region of the laser light. The upper semiconductor reflector includes a lenticular medium having a convex surface toward the lower semiconductor reflector.

Vertical cavity surface emitting laser diode and process for producing the same

A surface emitting semiconductor laser diode of a tunnel junction type includes a semiconductor substrate, a first reflector, a second reflector, an active region disposed in series between the first and second reflectors, and a tunnel junction region disposed in series between the first and second reflectors. The tunnel junction region includes a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type that forms a junction with the first semiconductor layer, the first semiconductor layer being composed of a supper-lattice layer that at least partially includes aluminum and is partially oxidized.

Surface-emitting laser diode with tunnel junction and fabrication method thereof

A surface emitting semiconductor laser includes a substrate, a first semiconductor multiple layer reflecting mirror formed on the substrate, the reflecting mirror having a semiconductor layer including at least Ga, In and P, an active region formed on the first semiconductor multiple layer reflecting mirror, a second semiconductor multiple layer reflecting mirror formed on the active region, a current confining layer formed between the first and second multiple layer reflecting mirrors, the current confining layer including an oxidized region at a peripheral portion, a first electrode formed at a side of the first semiconductor multiple layer reflecting mirror, and a second electrode formed at a side of the second semiconductor multiple layer reflecting mirror, wherein the first electrode is electrically connected to the semiconductor layer of the first semiconductor multiple layer reflecting mirror.

Surface emitting semiconductor laser and method of manufacturing the same

There is provided a surface emitting semiconductor laser satisfying a requirement of making a transverse mode stable and having characteristics of high output power, low resistance, high efficiency, and high speed response and a method for manufacturing the surface emitting semiconductor laser. Five holes are formed on the top surface of an upper multilayer reflection film formed in the shape of a post by the use of a focused ion beam (FIB) processing unit. One hole is formed on the surface of an upper multilayer reflection film corresponding to the center position of a square current injection region which is about 8 &#x3bc;m square and the remaining four holes are formed at the corners of the square current injection region, for example, at the positions about 2 &#x3bc;m square away from the one hole to produce four light emitting spots.

Surface emitting semiconductor laser and manufacturing method thereof

A surface emitting semiconductor laser includes a substrate, a laser portion having a first post construction that is provided on the substrate and has a contact region on a top surface thereof, and an electrode portion having a second post construction provided on the substrate. The electrode portion includes a conductive layer electrically connected to the contact region and extends therefrom.

Surface emitting semiconductor laser and method of fabricating the same

A surface emitting semiconductor laser includes a substrate on which a resonator is formed, the resonator including a lower reflection mirror, an active region, and an upper reflection mirror, a metal layer that is provided on the upper reflection mirror and has a first aperture that defines an outgoing region of laser light generated in the active region, and an optical confinement region that is provided between the metal layer and the lower reflection mirror and has a second aperture that defines a light emission region of the laser light. The second aperture has a diameter equal to or greater than 12 &mgr;m, and the first aperture has a diameter that is 1 to 5 &mgr;m smaller than that of the second aperture. The laser light emitted from the emitting region has a multimode including multiple orders selected within a predetermined wavelength range.

Surface emitting semiconductor laser

The present invention provides a surface emitting semiconductor laser, comprising: a semiconductor substrate having sequentially layered thereon a lower multi-layer mirror, an active layer region, and an upper multi-layer mirror that, together with the lower multi-layer mirror, contributes to the formation of a cavity; an upper electrode disposed on an upper layer of the upper multi-layer mirror and provided with an aperture that forms an emission region of a laser beam generated at the active layer region; and a current confinement portion disposed between the upper electrode and the lower multi-layer mirror and provided with an aperture that forms a current path; wherein an aperture diameter of the upper electrode and an aperture diameter of the current confinement portion are determined such that a difference between an optical loss of the cavity in a higher-order lateral mode of the laser beam and an optical loss of the cavity in a fundamental lateral mode of the laser beam becomes a value in the vicinity of a maximum value, and the higher-order lateral mode is suppressed, and at least one of the aperture formed in the upper electrode and the aperture of the current confinement portion is formed into a two-fold symmetrical configuration having long and short axes with respect to arbitrary two axial directions orthogonal to each other in a plane.

A surface emitting semiconductor laser and a method for manufacturing a surface emitting semiconductor laser array which are capable of controlling the polarization plane of a laser beam in constant direction and obtaining a low threshold current are provided. The surface emitting semiconductor laser is provided with a first reflection mirror layer of the first conduction type formed on the main plane of a semiconductor substrate, an active layer having a quantum well laminated above the first reflection mirror layer, a post having a second reflection mirror layer of the second conduction type different from the first conduction type for constituting an resonator structure together with the first reflection mirror, and plurality of peripheral high resistance layers having the periphery of high resistance inserted between the first reflection mirror layer and the second reflection mirror layer, and which plurality of peripheral high resistance layers are different from each other in proportion of non-high resistance in the plane parallel to the main plane of the semiconductor substrate.

Surface emitting semiconductor laser, surface emitting semiconductor laser array, and method for manufacturing surface emitting semiconductor laser

A surface emitting semiconductor laser that is easy to manufacture and has a high-intensity fundamental lateral mode optical output power. The surface emitting semiconductor laser has a semiconductor substrate on which are sequentially laminated a lower n-type DBR layer, an active layer region, an upper p-type DBR layer, a p-side electrode that is an upper layer of the upper n-type DBR layer and functions as an upper electrode provided with an aperture that forms an emission region for a laser beam, and a current confinement portion formed by oxidization. On the basis of the reflectance of a cavity in a region corresponding to the p-side electrode, a metal aperture diameter (W ) of the aperture and a diameter (W ) of the current confinement portion are determined such that the difference between an optical loss of a cavity in a higher-order lateral mode of a laser beam and an optical loss of a cavity in a fundamental lateral mode of a laser beam becomes larger.

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Kanagawa, Japan

Nobuaki Ueki