Kabushiki Kaisha Toshiba

Toshiba Materials Co., Ltd.

Nobuaki Nakashima

Shinzo Sugai

Tooru Komatsu

Takashi Sano

Eiichi Watanabe

Hiromasa Kato

Masami Okamura

Yoshiyuki Fukuda

Shinichi Yamamoto

Hiromichi Horie

Yukihiro Fukuta

Yoshitaka Adachi

Koichi Nittoh

Tsuyoshi Yasui

Takashi Kuse

Masanori Mizobe

Yoshiki Orimoto

Yasuhisa Makino

According to one embodiment, a thermoelectric material are provided. The thermoelectric material includes a sintered body formed of p-type and n-type thermoelectric materials for the thermoelectric conversion element. The thermoelectric materials have a MgAgAs type crystal structure as a main phase. An area ratio of internal defects of the thermoelectric materials for one thermoelectric conversion element is 10% or less in terms of a total area ratio of defective portions in a scanning surface according to ultrasonic flaw detection in a thickness direction of the thermoelectric material. No defect having a length of 800 μm or more is present at any vertex of chips of the thermoelectric materials.

Thermoelectric material, manufacturing method of thermoelectric material, thermoelectric conversion element, and thermoelectric conversion module

The manufacturing cost of a sputtering target is reduced and the impurity concentration of the manufactured sputtering target is also reduced. A method of manufacturing a sputtering target includes: surface-treating at least one of a used sputtering target and a scrap material; melting at least one of the used sputtering target and the scrap material after the surface treatment to form an ingot; and manufacturing a sputtering target by subjecting the ingot to forging, rolling, heat treating, and machining.

Method of manufacturing sputtering target and sputtering target

According to an embodiment, two or more sets of knead forging are performed where one set is cold forging processes in directions parallel to and perpendicular to a thickness direction of a columnar titanium material. The titanium material is heated to a temperature of 700&#xb0; C. or more to induce recrystallization, and thereafter, two or more sets of knead forging are performed where one set is the cold forging processes in the directions parallel to and perpendicular to the thickness direction. Further, the titanium material is cold rolled, and is heat-treated to a temperature of 300&#xb0; C. or more.

Sputtering target, manufacturing method thereof, and manufacturing method of semiconductor element

A neutron grid, comprises: a grid including: a plurality of spacers through which at least a part of first neutrons from a target passes; and a plurality of absorbers to absorb at least a part of second neutrons scattered thorough the target, the spacers and the absorbers being alternately arranged along a first direction and extending along a second direction intersecting with the first direction; and a pair of covers through which at least a part of the first neutrons and at least a part of the second neutrons pass, sandwiching the grid along a third direction intersecting with the first and second directions. A thermal expansion coefficient difference between one of the spacers and one of the absorbers is &#xb1;9&#xd7;10/&#xb0; C. or less, or Young's modulus of the spacer is 100 GPa or more.

Neutron grid, neutron grid stack, neutron grid device, and method of manufacturing neutron grid

In one embodiment, a method for manufacturing a tantalum sputtering target includes a first knead forging step, a first heating step, a second knead forging step, a cold rolling step, and a second heating step. In the first knead forging step, a tantalum material is subjected to two sets or more of knead forging, each of the sets being cold forging in directions parallel to and perpendicular to a thickness direction. In the second knead forging step, one set or more of knead forging is performed after the first heating step, each of the steps being cold forging in the directions parallel to and perpendicular to the thickness direction.

Tantalum sputtering target and method for manufacturing the same, and method for manufacturing semiconductor element

The present invention provides a getter material configured by a pressed powder mixture comprising Ba&#x2014;Al alloy powder and Ni powder, wherein when the pressed powder mixture is heated in a vacuum atmosphere or an inert gas atmosphere, a temperature at which an exothermic reaction starts is ranging from 750&#xb0; C. to 900&#xb0; C. According to this getter material, since the temperature at which the pressed powder mixture starts the exothermic reaction is set within a range from 750&#xb0; C. to 900&#xb0; C., there can be provided a getter material and an evaporation type getter device capable of suitably controlling an evaporation amount of getter components under a stable condition, and is excellent in responsiveness because a time ranging from a starting time of heating the getter material to a starting time of evaporation of the getter components can be shortened. In addition, the metal container to be filled with the getter material is free from deformation and melting, and a heat-evaporation process time of the getter material can be shortened, so that there can be provided the evaporation type getter device excellent in responsiveness because a time required for the electron tube to attain to a predetermined vacuum degree can be also shortened.

Getter material and evaporable getter device using the same, and electron tube

An IC package and LSI package having a lead frame of a copper alloy that contains 0.1 to 1% by weight of chromium, 0.01 to 0.5% by weight of zirconium and that has partial discolored regions caused by unbalanced precipitation of the zirconium distributed thereon at a rate of 2 grains/100 cm.sup.2 or less is disclosed. The lead frame is, for example, obtained from an alloy that contains 0,005% by weight of sulfur or less. The lead frame has high reliability, can be produced in high yield and has high electrical conductivity.

IC package and LSI package using a lead frame formed of a

Lead frame with improved adhesiveness property against plastic and

Fe-Ni based alloy

A lead frame comprising a copper alloy containing 0.1 to 1 % by weight of chromium, 0.01 to 0.5% by weight of zirconium and having partial discolored regions caused by unbalanced precipitation of the zirconium distributed thereon at a rate of 2 grains/100 cm.sup.2 or less. The lead frame is, for example, obtained by an alloy containing 0.005% by weight of sulphur or less. The lead frame has an high reliability, high yield of production and high electrical conductivity.

Lead frame formed of a copper-zirconium alloy

The present invention provides non-magnetic stainless steel which is used as materials for small parts in precision machines and electronic equipment. The non-magnetic stainless steel consists of an iron-based alloy containing 9 to 22% by weight of nickel, 12 to 26% by weight of chromiun, the balance of iron and inevitable impurities. The martensitic area ratio of the iron-based alloy structure is not more than 20%. The stainless steel exhibits excellent workability and is suitable as a raw material for TV electron gun parts and small gears which are formed by strong working such as blanking or the like.

Growing community of inventors

Kanagawa, Japan

Nobuaki Nakashima