Fuji Photo Film Company, Limited

Nobuaki Matsuda

Kesanao Kobayashi

Toshiaki Aoai

Tadayoshi Kokubo

Akira Umehara

Yoshimasa Aotani

A developing solution for negative type photo-sensitive resin compositions which comprises an aqueous solution containing 0.01 to 1.5% by weight of at least one compound selected from quaternary ammonium bases represented by formula (I): ##STR1## wherein R.sup.1, R.sup.2, R.sup.3 and R.sup.4 are the same or different, and are groups selected from the class consisting of alkyl and hydroxyalkyl groups, each group having 1 to 6 carbon atoms, and containing a nonionic, cationic or amphoteric surface active agent. The developing solution allows for development of sharp image patterns within a short period without forming mottles.

Developing solution for negative type photosensitive resin compositions

A positive-type photoresist composition is disclosed, which comprises:

Positive image-forming process utilizing glass substrate with oxide film

A positively working resist material is disclosed, comprising a compound having at least one silyl ether group and capable of directly dissociating an Si-O-C bond upon irradiation with far ultraviolet rays, X-rays, an electron beam, or an ion beam. The resist material has high sensitivity to high energy radiation, excellent resistance to dry etching, and can be developed with an alkaline aqueous solution.

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Shizuoka, Japan

Nobuaki Matsuda