Seiko Epson Corporation

Advanced Interconnect Systems Limited

Seiko Espon Corporation

Nobuaki Hashimoto

Haruki Ito

Terunao Hanaoka

Yasuo Yamasaki

Kanechika Kiyose

Shuichi Tanaka

Kazushige Umetsu

Kenji Wada

Fumiaki Matsushima

Munenori Kurasawa

Norikata Hama

Kohei Yamada

Norio Nakamura

Tsuyoshi Yoda

Norio Imaoka

Hiroyuki Suemori

Hiroshi Sugai

Kazuyoshi Noake

A semiconductor device includes an integrated circuit that is disposed at a first face side of a semiconductor substrate, the semiconductor substrate having a first face and a second face, the second face opposing the first face, the semiconductor substrate having a through hole from the first face to the second face; an external connection terminal that is disposed at the first face side; a conductive portion that is disposed in the through hole, the conductive portion being electrically connected to the external connection terminal; and an electronic element that is disposed at a second face side.

Semiconductor device, manufacturing method for semiconductor device, electronic component, circuit substrate, and electronic apparatus

An ultrasonic device includes an element substrate, an ultrasonic transducer array disposed on a rear surface of the element substrate, and having a plurality of ultrasonic transducers arranged in an array, an electrode line connected to the ultrasonic transducer on the rear surface of the element substrate, and drawn to a terminal region located outside the ultrasonic transducer array in a planar view of the element substrate viewed from a normal direction, a sealing plate bonded to the rear surface side of the element substrate, and a through electrode penetrating the sealing plate in a thickness direction and connected to an electrode pad of the electrode line at a position, which is located outside a region opposed to the ultrasonic transducer array of the sealing plate and is opposed to the electrode pad.

Ultrasonic device, ultrasonic module, electronic apparatus, and ultrasonic measurement apparatus

An ultrasonic device includes an element substrate and a wiring substrate. The element substrate includes an ultrasonic element and an element interconnect terminal connected to the ultrasonic element. The wiring substrate includes a wiring terminal and an opening portion that defines an opening extending through the wiring substrate. The element interconnect terminal and the wiring terminal are connected so as to oppose each other. The opening portion encloses the ultrasonic element in plan view as seen from a thickness direction of the wiring substrate.

Ultrasonic device, method for producing ultrasonic device, ultrasonic probe, ultrasonic measurement apparatus, and electronic device

An electronic substrate includes: an electronic element provided on a first face of a semiconductor substrate having a through hole; a passive element provided on a second face of the semiconductor substrate; a first part of an interconnection pattern provided on the second face of the semiconductor substrate; an insulating layer provided on the second face of the semiconductor substrate; and a second part of the interconnection pattern provided on the insulating layer.

Electronic substrate

An electronic substrate including: a base substrate having an active face and a rear face; and a plurality of inductor elements formed on or above the active face, or formed on or above the rear face.

Electronic substrate, semiconductor device, and electronic device

A via hole is formed on a base substrate before a device circuit is formed, and thermal oxidation is performed to form a thermal oxidation layer on a surface of the base substrate on which the device circuit is formed and a surface in the via hole. The device circuit having a conductive section is formed on the base substrate after the thermal oxidation, and then, a conductive body is embedded in the via hole.

Device-mounted substrate, infrared light sensor and through electrode forming method

A semiconductor device includes: a semiconductor substrate including a first face and a second face on a side opposite to the first face; an external connection terminal formed on the first face of the semiconductor substrate; a first electrode formed on the first face of the semiconductor substrate and electrically connected to the external connection terminal; an electronic element formed on or above the second face of the semiconductor substrate; a second electrode electrically connected to the electronic element and having a top face and a rear face; a groove portion formed on the second face of the semiconductor substrate and having a bottom face including at least part of the rear face of the second electrode; and a conductive portion formed in the groove portion and electrically connected to the rear face of the second electrode.

Growing community of inventors

Suwa, Japan

Nobuaki Hashimoto