Asm International N.v.

Asm IP Holding B.v.

Asm Japan K.k.

Noboru Takamure

Atsuki Fukazawa

Suvi P Haukka

Antti Niskanen

Hideaki Fukuda

Ryu Nakano

Kunitoshi Namba

Naoto Tsuji

Hyung Sang Park

Kiyohiro Matsushita

Masaru Zaitsu

Manabu Kato

Hiroki Arai

Tatsuhiro Okabe

The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

Methods for forming doped silicon oxide thin films

A film forming apparatus includes a reactor chamber, a first electrode provided in the reactor chamber and receiving electrical power, a second electrode provided in the reactor chamber and facing the first electrode, a gas supply inlet for supplying material gas to a space between the first and second electrodes, and a gas exhaust outlet for discharging the material gas. Insulating material is not exposed to a flow path for the material gas in the reactor chamber.

Film forming apparatus, and method of manufacturing semiconductor device

A method for forming a Ti-containing film on a substrate by plasma-enhanced atomic layer deposition (PEALD) using tetrakis(dimethylamino)titanium (TDMAT) or tetrakis(diethylamino)titanium (TDEAT), includes: introducing TDMAT and/or TDEAT in a pulse to a reaction space where a substrate is placed; continuously introducing a NH-free reactant gas to the reaction space; applying RF power in a pulse to the reaction space wherein the pulse of TDMAT and/or TDEAT and the pulse of RF power do not overlap; and repeating the above steps to deposit a Ti-containing film on the substrate.

Method for forming Ti-containing film by PEALD using TDMAT or TDEAT

A method for forming a dielectric film in a trench on a substrate by plasma-enhanced atomic layer deposition (PEALD) performs one or more process cycles, each process cycle including: (i) feeding a silicon-containing precursor in a pulse; (ii) supplying a hydrogen-containing reactant gas at a flow rate of more than about 30 sccm but less than about 800 sccm in the absence of nitrogen-containing gas; (iii) supplying a noble gas to the reaction space; and (iv) applying RF power in the presence of the reactant gas and the noble gas and in the absence of any precursor in the reaction space, to form a monolayer constituting a dielectric film on a substrate at a growth rate of less than one atomic layer thickness per cycle.

Method for forming dielectric film in trenches by PEALD using H-containing gas

A method for forming a silicon-containing dielectric film on a substrate by atomic layer deposition (ALD) includes: providing two precursors, one precursor containing a halogen in its molecule, another precursor containing a silicon but no halogen in its molecule, adsorbing a first precursor, which is one of the two precursors onto a substrate to deposit a monolayer of the first precursor; adsorbing a second precursor, which is the other of the two precursors onto the monolayer of the first precursor to deposit a monolayer of the second precursor; and exposing the monolayer of the second precursor to radicals of a reactant to cause surface reaction with the radicals to form a compound monolayer of a silicon-containing film.

Method for forming Si-containing film using two precursors by ALD

A method of forming a dielectric film having at least Si&#x2014;N, Si&#x2014;C, or Si&#x2014;B bonds on a semiconductor substrate by atomic layer deposition (ALD), includes: adsorbing a precursor on a surface of a substrate; supplying a reactant gas over the surface; reacting the precursor and the reactant gas on the surface; and repeating the above steps to form a dielectric film having at least Si&#x2014;N, Si&#x2014;C, or Si&#x2014;B bonds on the substrate. The precursor has at least one Si&#x2014;C or Si&#x2014;N bond, at least one hydrocarbon, and at least one halogen attached to silicon in its molecule.

Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen

A method for determining conditions for forming a dielectric SiOCH film, includes: (i) forming a dielectric SiOCH film on a substrate under conditions; (ii) evaluating the conditions using a ratio of Si&#x2014;CH3 bonding strength to Si&#x2014;O bonding strength of the film as formed in step (i); (iii) if the ratio is 2.50 % or higher, confirming the conditions, and if the ratio is less than 2.50 %, changing the conditions by changing at least one of the susceptor temperature, the distance between upper and lower electrodes, the RF power, and the curing time; and (iv) repeating steps (i) to (iii) until the ratio is 2.50 % or higher.

Growing community of inventors

Tokyo, Japan

Noboru Takamure